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arXiv:2207.09235 · Applied Physics Letters

Controlled quantum dot array segmentation via highly tunable interdot tunnel coupling

Martin Nurizzo, Baptiste Jadot, Pierre-André Mortemousque, Vivien Thiney, Emmanuel Chanrion, Matthieu Dartiailh, Arne Ludwig, Andreas Dirk Wieck, Christopher Bäuerle, Matias Urdampilleta, Tristan Meunier

Published Aug 22, 2022• 7 citations
arXivHTMLPDF

Abstract

Recent demonstrations using electron spins stored in quantum dot array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is, therefore, aiming at the precise control of the quantum dot parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling, and sub-Hz isolation between adjacent dots. We use this development to isolate a subpart of the array in a metastable configuration while performing charge displacement and readout in the rest of the system. The degree of control over tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation, and readout including this capability.

DOI
10.1063/5.0105635

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Recent demonstrations using electron spins stored in quantum dot array as qubits are promising for developing a scalable quantum computing platform. An ongoing effort is, therefore, aiming at the precise control of the quantum dot parameters in larger and larger arrays which represents a complex challenge. Partitioning of the system with the help of the inter-dot tunnel barriers can lead to a simplification for tuning and offers a protection against unwanted charge displacement. In a triple quantum dot system, we demonstrate a nanosecond control of the inter-dot tunnel rate permitting to reach the two extreme regimes, large GHz tunnel coupling, and sub-Hz isolation between adjacent dots. We use this development to isolate a subpart of the array in a metastable configuration while performing charge displacement and readout in the rest of the system. The degree of control over tunnel coupling achieved in a unit cell should motivate future protocol development for tuning, manipulation, and readout including this capability.
Spin qubits in semiconductor quantum circuits have been identified as a compelling platform for large scale quantum computing. Today an ongoing effort of the community is aiming at the scaling of such systems by filling larger and larger arrays. In this context the development of tuning and readout protocols allowing to reduce the inherent complexity of such systems seems to be a necessity.In the first part of my thesis, I demonstrate array partitioning of a linear triple quantum dot defined in a AlGaAs/GaAs heterostructure via a highly tunable interdot tunnel coupling. This allows us to operate independently smaller sections of the array which reduces the number of available charge states for the system and therefore reduces its complexity during the tuning.The second part of my thesis is focused on reducing the hardware overhead necessary to extract information during the readout of the spin qubits. In semiconductor spin qubits, high fidelity read-out is obtained through Pauli spin blockade in a double quantum dot with two electrons probed by a local electrometer. One electron is the qubit, the second is the ancilla and only one bit of information is extracted. To obtain the full two-bit information of the two-electron spin states, more quantum hardware is necessary (either dots, electrometers, or reservoirs).Based on an original protocol, I develop in this thesis a complete single-shot read-out procedure for two-electron spin states in a double quantum dot discriminating between S, T0, T+ and T-. It uses successively three distinct spin-to-charge conversion protocols interleaved with charge configuration measurements. The strategy is based on four novel experimental achievements:First, the control from the GHz to sub-Hz regime of the interdot tunnel coupling at the nanosecond timescale.Second, the separation of the spin-to-charge conversion and the charge read-out in the voltage gate space.Third, the suppression of spin relaxation process during the read-out procedure.Finally, the repetition of three distinct spin-to-charge conversion protocols.The read-out procedure is tested on various initialized populations and implemented in more complex spin manipulation sequences to assess its validity.
As with any quantum computing platform, semiconductor quantum dot devices require sophisticated hardware and controls for operation. The increasing complexity of quantum dot devices necessitates the advancement of automated control software and image recognition techniques for rapidly evaluating charge stability diagrams. We use an image analysis toolbox developed in Python to automate the calibration of virtual gates, a process that previously involved a large amount of user intervention. Moreover, we show that straightforward feedback protocols can be used to simultaneously tune multiple tunnel couplings in a triple quantum dot in a computer automated fashion. Finally, we adopt the use of a “tunnel coupling lever arm” to model the interdot barrier gate response and discuss how it can be used to more rapidly tune interdot tunnel couplings to the gigahertz values that are compatible with exchange gates.
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
We propose and demonstrate complete spin state readout of a two-electron system in a double quantum dot probed by an electrometer. The protocol is based on repetitive single-shot measurements using Pauli spin blockade and our ability to tune on fast timescales the detuning and the interdot tunnel coupling between the GHz and sub-Hz regime. A sequence of three distinct manipulations and measurements allows establishing if the spins are in S, T_{0}, T_{+}, or T_{−} state. This work points at a procedure to reduce the overhead for spin readout, an important challenge for scaling up spin-qubit platforms.
Few-electron states confined in quantum-dot arrays are key objects in quantum computing. The discrimination between these states is essential for the readout of a (multi-)qubit state, and can be achieved through a measurement of the quantum capacitance within the gate-reflectometry approach. For a system controlled by several gates, the dependence of the measured capacitance on the direction of the oscillations in the voltage space is captured by the quantum capacitance matrix. Herein, we apply this tool to study a double quantum dot coupled to three gates, which enable the tuning of both the bias and the tunneling between the two dots. Analytical solutions for the two-electron case are derived within a Hubbard model, showing the overall dependence of the quantum capacitance matrix on the applied gate voltages. In particular, we investigate the role of the tunneling gate and reveal the possibility of exploiting interdot coherences in addition to charge displacements between the dots. Our results can be directly applied to double-dot experimental setups, and pave the way for further applications to larger arrays of quantum dots.
The gate-defined quantum dot is regarded as one of the basic structures required for scalable semiconductor quantum processors. Here, we demonstrate a structure that contains three quantum dots scaled in series. The electron number of each dot and the tunnel coupling between them can be tuned conveniently using splitting gates. We tune the quantum dot array asymmetrically such that the tunnel coupling between the right dot and the central dot is much larger than that between the left dot and the central dot. When driven by microwaves, the sidebands of the photon-assisted tunneling process appear not only in the left-to-central dot transition region but also in the left-to-right dot transition region. These sidebands are both attributed to the left-to-central transition for asymmetric coupling. Our result shows that there is a region of a triple quantum dot structure that remains indistinct when studied with a normal two-dimensional charge stability diagram; this will be helpful in future studies of the scalability of quantum dot systems.