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arXiv:2206.06546 · Physical Review A

Individual addressing of trapped ion qubits with geometric phase gates

R. T. Sutherland, R. Srinivas, D. T. C. Allcock

Published Mar 9, 2023• 7 citations
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Abstract

We propose a scheme for individual addressing of trapped ion qubits, selecting them via their motional frequency. We show that geometric phase gates can perform single-qubit rotations using the coherent interference of spin-independent and (global) spin-dependent forces. The spin-independent forces, which can be generated via localized electric fields, increase the gate speed while reducing its sensitivity to motional decoherence, which we show analytically and numerically. While the scheme applies to most trapped ion experimental setups, we numerically simulate a specific laser-free implementation, showing cross-talk errors below ${10}^{\ensuremath{-}6}$ for reasonable parameters.

DOI
10.1103/physreva.107.032604

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We propose a scheme for individual addressing of trapped ion qubits, selecting them via their motional frequency. We show that geometric phase gates can perform single-qubit rotations using the coherent interference of spin-independent and (global) spin-dependent forces. The spin-independent forces, which can be generated via localized electric fields, increase the gate speed while reducing its sensitivity to motional decoherence, which we show analytically and numerically. While the scheme applies to most trapped ion experimental setups, we numerically simulate a specific laser-free implementation, showing cross-talk errors below 10\ensuremath−6{10}^{\ensuremath{-}6}10\ensuremath−6 for reasonable parameters.
Favored schemes for trapped-ion quantum logic gates use bichromatic laser fields to couple internal qubit states with external motion through a "spin-dependent force." We introduce a new degree of freedom in this coupling that reduces its sensitivity to phase decoherence. We demonstrate bichromatic spin-dependent forces on a single trapped 111Cd+ ion, and show that phase coherence of the resulting entangled states of spin and motion depends critically upon the spectral arrangement of the optical fields. This applies directly to the operation of entangling gates on multiple ions.
We propose a method of individual single-qubit addressing of linear trapped-ion chains utilizing two ultrastable femtosecond frequency combs. For that, we suggest implementing the single-qubit gates with two counterpropagating frequency combs overlapping on the target ion and causing the ac Stark shift between the qubit levels. With analytical calculations and numerical modeling, we show that the arbitrary single-qubit rotations can be indeed realized using only laser fields propagating along the ion chain. We analyze the error sources for the proposed addressing method and prove that it allows implementing the single-qubit gates with high fidelity.
Geometric phase gates with addressed laser radiation are widely used in trapped-ion quantum computers to drive high-fidelity entangling gates on an arbitrary qubit pair of a larger ion chain. Such programmable connectivity exploits the collective phonons to mediate the desired interaction, while simultaneously achieving robustness to their thermal fluctuations by a careful calibration of the gate time with respect to the laser and vibrational-mode frequencies. Crosstalk errors can arise when the spectator qubits, which should ideally remain idle during the gate, are partially driven by the laser fields. The minimal crosstalk, which is set by the laser beam size on the spectator ions, can be achieved when the addressing beams propagate perpendicular to the ion chain. However, this results in exciting the radial phonons, and can complicate achieving high-fidelities as the ion chain grows due to the so-called spectral mode crowding. In this work, we present the theoretical description of a scheme recently implemented by Faorlin et al.al.al.. This scheme overcomes these complications by engineering addressable state-dependent forces along the ion-chain with laser beams that propagate perpendicular to it through the use of structured light gradients. In this way, one can excite the axial phonons and avoid the spectral mode crowding, while simultaneously minimizing the crosstalk. We present a detailed derivation of the entangling gate scheme, together with analytical closed-form expressions for the leading contribution to the gate error caused by thermal motional fluctuations and dephasing noise. Our results confirm that such fluctuations account for up to 93%\%% of the error budget under the operating conditions of the gate implemented by Faorlin et al.al.al.. We identify target parameters to reduce the motional error from the reported 10−310^{-3}10−3 to the 10−510^{-5}10−5 level.
Abstract We propose and study ways speeding up of the entangling operations in the trapped ions system with high fidelity. First, we find a scheme to increase the speed of a two-qubit gate without the limitation of trap frequency, which was considered as the fundamental limit. Second, we study the fast gate scheme for entangling more than two qubits simultaneously. We apply the method of applying multiple frequency components on laser beams for the gate operations. In particular, in order to avoid infinite terms from the coupling to carrier transition, we focus on the phase-insensitive gate scheme here. We carefully study the effect of large excitation of motional mode beyond the limit of Lamb–Dicke approximation by including up to second order terms of the Lamb–Dicke parameter. We study the speed limit of multi-qubit global entangling gates without individual addressing requirements. Furthermore, our gates can be made insensitive to the fluctuation of initial motional phases which are difficult to stabilise in the phase-insensitive gate scheme.
Abstract To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of 40Ca+ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.
The construction of entangling gates with individual addressing capability represents a crucial approach for implementing quantum computation in trapped-ion crystals. Conventional entangling gate schemes typically rely on laser beam wave vectors to couple the ions' spin and motional degrees of freedom. Here, we experimentally demonstrate an alternative method that employs a polarization gradient field generated by a tightly focused laser beam-an approach theoretically proposed as the Magnus effect for quantum logic gate design [Mazzanti et al., Phys. Rev. Res. 5, 033036 (2023)PPRHAI2643-156410.1103/PhysRevResearch.5.033036]. Using this technique, we perform Raman operations on hyperfine qubits encoded in ^{171}Yb^{+} ions, generating spin-dependent forces along axial motional modes in a linear trap. By utilizing an acousto-optic deflector to create arbitrary spot pairs for individual ion addressing in two-ion (four-ion) chains, we achieve Mølmer-Sørensen gates with Bell-state fidelities exceeding 98.7(1)% [and 97.2(4)%]. Further improvements in numerical aperture (NA) and laser power could reduce gate durations while enhancing fidelity by orders of magnitude. This method is compatible with-and can significantly simplify-optical tweezer gate proposals, where motional mode engineering enables scalable trapped-ion quantum computation. The technique can be readily extended to two-dimensional ion crystals, representing a key advancement toward large-scale trapped-ion quantum processors.