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arXiv:1911.04543 · New Journal of Physics

Single-ion addressing via trap potential modulation in global optical fields

Christopher M. Seck, Adam M Meier, J True Merrill, Harley T Hayden, Brian C Sawyer, Curtis E Volin, Kenton R Brown

Published Mar 16, 2020• 8 citations
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Abstract

Abstract To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of 40Ca+ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.

DOI
10.1088/1367-2630/ab8046

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Abstract To date, individual addressing of ion qubits has relied primarily on local Rabi or transition frequency differences between ions created via electromagnetic field spatial gradients or via ion transport operations. Alternatively, it is possible to synthesize arbitrary local one-qubit gates by leveraging local phase differences in a global driving field. Here we report individual addressing of 40Ca+ ions in a two-ion crystal using axial potential modulation in a global gate laser field. We characterize the resulting gate performance via one-qubit randomized benchmarking, applying different random sequences to each co-trapped ion. We identify the primary error sources and compare the results with single-ion experiments to better understand our experimental limitations. These experiments form a foundation for the universal control of two ions, confined in the same potential well, with a single gate laser beam.
We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.
Two-dimensional (2D) ion crystals may represent a promising path to scale up qubit numbers for ion trap quantum information processing. However, to realize universal quantum computing in this system, individually addressed high-fidelity two-qubit entangling gates still remain challenging due to the inevitable micromotion of ions in a 2D crystal as well as the technical difficulty in 2D addressing. Here we demonstrate two-qubit entangling gates between any ion pairs in a 2D crystal of four ions. We use symmetrically placed crossed acousto-optic deflectors (AODs) to drive Raman transitions and achieve an addressing crosstalk error below 0.1%. We design and demonstrate a gate sequence by alternatingly addressing two target ions, making it compatible with any single-ion addressing techniques without crosstalk from multiple addressing beams. We further examine the gate performance versus the micromotion amplitude of the ions and show that its effect can be compensated by a recalibration of the laser intensity without degrading the gate fidelity. Our work paves the way for ion trap quantum computing with hundreds to thousands of qubits on a 2D ion crystal. Quantum gates in 2D ion crystals are more challenging than in 1D. Here, the authors use their 2D ion trap platform and acousto-optical deflectors to demonstrate a 2-qubit gate that can stand the ion micromotion in such configuration.
Abstract Trapped-ion quantum computing can utilize all motional modes of the ion-crystal, to entangle multiple qubits simultaneously, enabling universal computation with multi-qubit gates supplemented by single-qubit rotations. Using multiple tones to drive each ion individually induces Ising-type interactions, forming a multi-qubit gate, where the coupling matrix of all ion pairs is fully controllable. This reduces the total gate count while maintaining high fidelity, as opposed to traditional methods that rely on a single type of two-qubit gate, such as the well-known Mølmer–Sørensen gate. However, scaling to large ion chains, individual addressing can be technically challenging in terms of optical delivery and signal generation. We explore global and semi-global drives combined with single-qubit flips and show that these can reproduce the full set of multi-qubit gates. Although optimizing the combination of single-qubit flips is a computationally hard problem, we propose an efficient scheme to implement any desired couplings in large ion chains, yielding a concatenation scheme that uses at most N / 2 multi-qubit gates, with N being the number of ions. In addition, we show that by using B < N independent semi-global fields, each driving a set of N / B ions, the number of maximal multi-qubit gates is reduced to approximately N 2 B 2 ( N − 1 ) . We show how to design the driving fields that support these schemes and investigate their properties. Our results pave the way for efficient implementations of quantum algorithms in large-scale trapped-ion quantum systems.
We propose a scheme for individual addressing of trapped ion qubits, selecting them via their motional frequency. We show that geometric phase gates can perform single-qubit rotations using the coherent interference of spin-independent and (global) spin-dependent forces. The spin-independent forces, which can be generated via localized electric fields, increase the gate speed while reducing its sensitivity to motional decoherence, which we show analytically and numerically. While the scheme applies to most trapped ion experimental setups, we numerically simulate a specific laser-free implementation, showing cross-talk errors below ${10}^{\ensuremath{-}6}$ for reasonable parameters.
We demonstrate parallel composite quantum logic gates with phases implemented locally through nanoscale movement of ions within a global laser beam of fixed pulse duration. We show that a simple four-pulse sequence suffices for constructing ideal arbitrary single-qubit rotations in the presence of large intensity inhomogeneities across the ion trap due to laser beam-pointing or beam-focusing. Using such sequences, we perform parallel arbitrary rotations on ions in two trapping zones separated by 700 μμμm with fidelities comparable to those of our standard laser-controlled gates. Our scheme improves on current transport or zone-dependent quantum gates to include phase modulation with local control of the ion's confinement potential. This enables a scalable implementation of an arbitrary number of parallel operations on densely packed qubits with a single laser modulator and beam path.
We propose a method of individual single-qubit addressing of linear trapped-ion chains utilizing two ultrastable femtosecond frequency combs. For that, we suggest implementing the single-qubit gates with two counterpropagating frequency combs overlapping on the target ion and causing the ac Stark shift between the qubit levels. With analytical calculations and numerical modeling, we show that the arbitrary single-qubit rotations can be indeed realized using only laser fields propagating along the ion chain. We analyze the error sources for the proposed addressing method and prove that it allows implementing the single-qubit gates with high fidelity.