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arXiv:2203.00329 · Frontiers in Photonics

Superradiance of Spin Defects in Silicon Carbide for Maser Applications

Andreas Gottscholl, Maximilian Wagenhöfer, Manuel Klimmer, Selina Scherbel, Christian Kasper, Valentin Baianov, Georgy V. Astakhov, Vladimir Dyakonov, Andreas Sperlich

Published May 16, 2022• 14 citations
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Abstract

Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (VSi) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the VSi into their mS = ±1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ≈ 104–105) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.

DOI
10.3389/fphot.2022.886354

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Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (VSi) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the VSi into their mS = ±1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ≈ 104–105) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.
Microwaves (MWs) are at the heart of many technologies, e.g.e.g.e.g. for communication, timekeeping, remote sensing, and quantum information processing. Masers can boost faint MW signals quite nicely, but not under real-world conditions. The authors demonstrate efficient population inversion of optically pumped vacancy-related spins in SiC, at room temperature, and find realistic operating conditions for a SiC maser to serve as a continuous-wave amplifier. These spins can also be coherently coupled to superconducting cavities efficiently at cryogenic temperatures. These findings suggest this SiC system as a promising platform for MW photonics and quantum electronics.
We propose a method to create a room-temperature maser operating at approximately 2.9~GHz frequency using an ensemble of negatively charged nitrogen-vacancy electronic spins (NV) in diamond, without requiring population inversion. Our method considers a DC magnetic field of a few milli-Tesla (mT) applied along the perpendicular direction of an ensemble of NV spins aligned along a common axis. This perpendicular magnetic-field creates superposition states of ∣ms=−1⟩|m_{\mathrm{s}}=-1\rangle∣ms​=−1⟩ and ∣ms=+1⟩|m_{\mathrm{s}}=+1\rangle∣ms​=+1⟩ of the NV spin's ground state triplet levels and thereby makes it possible to drive all three transitions in the NV spin ground state. We model the system by including optical pumping of the NV spins, near-resonant driving of two transitions, and coupling the third transition to a near-resonant microwave resonator. Numerical estimates using experimentally realizable parameters show that inversionless masing can be achieved inside the microwave resonator using our method. As an application, we show that the output intensity of an inversionless maser (1.1×10141.1\times10^{14}1.1×1014 spins) can be used for magnetic field sensing with a DC sensitivity on the order of a hundred pT/Hz\sqrt{\mathrm{Hz}}Hz​. Our study opens a new direction in room-temperature diamond NV maser devices for quantum technological applications without the requirement of a strong bias magnetic field, as in conventional NV diamond masers.
We present a quantum theory of diamond masers operating at any temperature using a cavity quantum electrodynamical framework. Special attention is paid to the recently demonstrated room-temperature solid-state masers based on nitrogen-vacancy (NV) defect centers in diamond, but the model can easily be modified for other photoexcited chromophores such as pentacene-doped paraterphenyl, vacancies in silicon-carbide or boron nitride. We show that the eight energy levels involved in the optically pumped NV center polarization process can be mapped to a simple pumped two-level-system. We then derive simple analytical expressions for the optical pump threshold condition for masing as well as the steady-state microwave output power which can be used to design and predict maser performance. Finally, we investigate second-order correlations and find that typical diamond masers operate in an intermediate regime between the good and bad cavity limits where photon emission is driven by both stimulated and superradiant processes.
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The application of masers is limited by its demanding working conditions (high vacuum or low temperature). A room-temperature solid-state maser is highly desirable, but the lifetimes of emitters (electron spins) in solids at room temperature are usually too short (∼ns) for population inversion. Masing from pentacene spins in p-terphenyl crystals, which have a long spin lifetime (∼0.1 ms), has been demonstrated. This maser, however, operates only in the pulsed mode. Here we propose a room-temperature maser based on nitrogen-vacancy centres in diamond, which features the longest known solid-state spin lifetime (∼5 ms) at room temperature, high optical pumping efficiency (∼10(6) s(-1)) and material stability. Our numerical simulation demonstrates that a maser with a coherence time of approximately minutes is feasible under readily accessible conditions (cavity Q-factor ∼5 × 10(4), diamond size ∼3 × 3 × 0.5 mm(3) and pump power <10 W). A room-temperature diamond maser may facilitate a broad range of microwave technologies.