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arXiv:1709.00052 · Physical Review Applied

Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission

M. Fischer, A. Sperlich, H. Kraus, T. Ohshima, G. V. Astakhov, V. Dyakonov

Published May 4, 2018• 29 citations
arXivHTMLPDF

Abstract

Microwaves (MWs) are at the heart of many technologies, $e.g.$ for communication, timekeeping, remote sensing, and quantum information processing. Masers can boost faint MW signals quite nicely, but not under real-world conditions. The authors demonstrate efficient population inversion of optically pumped vacancy-related spins in SiC, at room temperature, and find realistic operating conditions for a SiC maser to serve as a continuous-wave amplifier. These spins can also be coherently coupled to superconducting cavities efficiently at cryogenic temperatures. These findings suggest this SiC system as a promising platform for MW photonics and quantum electronics.

DOI
10.1103/physrevapplied.9.054006

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Microwaves (MWs) are at the heart of many technologies, e.g.e.g.e.g. for communication, timekeeping, remote sensing, and quantum information processing. Masers can boost faint MW signals quite nicely, but not under real-world conditions. The authors demonstrate efficient population inversion of optically pumped vacancy-related spins in SiC, at room temperature, and find realistic operating conditions for a SiC maser to serve as a continuous-wave amplifier. These spins can also be coherently coupled to superconducting cavities efficiently at cryogenic temperatures. These findings suggest this SiC system as a promising platform for MW photonics and quantum electronics.
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (VSi) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the VSi into their mS = ±1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ≈ 104–105) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.
The silicon vacancy center in Silicon Carbide (SiC) provides an optically addressable qubit at room temperature in its spin- 32\frac{3}{2}23​ electronic state. However, optical spin initialization and readout are less efficient compared to those of spin-1 systems, such as nitrogen-vacancy centers in diamond, under non-resonant optical excitation. Spin-dependent fluorescence exhibits contrast only between ∣m=±3/2⟩| m=\pm 3/2\left.\right\rangle∣m=±3/2⟩ and ∣m=±1/2⟩| m=\pm 1/2\left.\right\rangle∣m=±1/2⟩ states, and optical pumping does not create a population difference between ∣+1/2⟩| +1/2\left.\right\rangle∣+1/2⟩ and ∣−1/2⟩| -1/2\left.\right\rangle∣−1/2⟩ states. Thus, operating one qubit (e.g., {∣+3/2⟩,∣+1/2⟩}\left\{| +3/2\left.\right\rangle ,| +1/2\left.\right\rangle \right\}{∣+3/2⟩,∣+1/2⟩} states) leaves the population in the remaining state ( ∣−1/2⟩| -1/2\left.\right\rangle∣−1/2⟩ ) unaffected, contributing to background in optical readout. To mitigate this problem, we propose a sensing scheme based on duplex qubit operation in the quartet, using microwave pulses with two resonant frequencies to simultaneously operate {∣+3/2⟩,∣+1/2⟩}\left\{| +3/2\left.\right\rangle ,| +1/2\left.\right\rangle \right\}{∣+3/2⟩,∣+1/2⟩} and {∣−1/2⟩,∣−3/2⟩}\left\{| -1/2\left.\right\rangle ,| -3/2\left.\right\rangle \right\}{∣−1/2⟩,∣−3/2⟩} . Experimental results demonstrate that this approach doubles signal contrast in optical readout and improves sensitivity in AC magnetometry compared to simplex operation.
Quantum networks based on solid-state spin defects present a transformative approach to secure communication and distributed quantum computing, utilizing quantum entanglement and coherent spin–photon interfaces. Silicon carbide (SiC) stands out as a compelling material platform due to its unique combination of a wide bandgap, high optical nonlinearity, CMOS-compatible fabrication, and controllable spin-active defects. These intrinsic properties facilitate efficient photon emission, robust spin coherence at both room and cryogenic temperatures, and integration with photonic nanostructures. Recent advancements in defect engineering and micro-nanophotonics have unlocked the potential of SiC quantum nodes, which feature electron-nuclear spin systems for high-fidelity quantum operations and long-lived quantum memories. Key steps such as single-shot readout and spin-photon entanglement have been successfully demonstrated, bringing SiC closer to a real quantum network platform. This review offers a comprehensive overview of the advancements in SiC-based quantum networks, encompassing key aspects such as defect fabrication methodologies, optimization of spin-photon interfaces, and strategies for photonic integration. Additionally, it examines the existing challenges and outlines promising future directions in this rapidly evolving field.
The maser, a microwave (MW) analog of the laser, is a well-established method for generating and amplifying coherent MW irradiation with ultra-low noise. This is accomplished by creating a state of population inversion between two energy levels separated by MW frequency. Thermodynamically, such a state corresponds to a small but negative temperature. The reverse condition, where only the lower energy level is highly populated, corresponds to a very low positive temperature. In this work, we experimentally demonstrate how to generate such a state in condensed matter at moderate cryogenic temperatures. This state is then used to efficiently remove microwave photons from a cavity, continuously cooling it to the quantum limit, well below its ambient temperature. Such an "anti-maser" device could be extremely beneficial for applications that would normally require cooling to millikelvin temperatures to eliminate any MW photons. For instance, superconducting MW quantum circuits (such as qubits and amplifiers) could, with the use of this device, operate efficiently at liquid helium temperatures.
We present a quantum theory of diamond masers operating at any temperature using a cavity quantum electrodynamical framework. Special attention is paid to the recently demonstrated room-temperature solid-state masers based on nitrogen-vacancy (NV) defect centers in diamond, but the model can easily be modified for other photoexcited chromophores such as pentacene-doped paraterphenyl, vacancies in silicon-carbide or boron nitride. We show that the eight energy levels involved in the optically pumped NV center polarization process can be mapped to a simple pumped two-level-system. We then derive simple analytical expressions for the optical pump threshold condition for masing as well as the steady-state microwave output power which can be used to design and predict maser performance. Finally, we investigate second-order correlations and find that typical diamond masers operate in an intermediate regime between the good and bad cavity limits where photon emission is driven by both stimulated and superradiant processes.