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arXiv:2201.11882

Integrated Room Temperature Single Photon Source for Quantum Key Distribution

Helen Zhi Jie Zeng, Minh Anh Phan Ngyuen, Ai, Xiaoyu, Adam Bennet, Alexander S. Solnstev, Arne Laucht, Ali Al‐Juboori, Milos Toth, Richard Paul Mildren, Robert Malaney, Igor Aharonovich

Published Jan 28, 2022• 0 citations
arXivHTMLPDF

Abstract

High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.

DOI
10.48550/arxiv.2201.11882

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High-purity single photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realise an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.
High-purity single-photon sources (SPS) that can operate at room temperature are highly desirable for a myriad of applications, including quantum photonics and quantum key distribution. In this work, we realize an ultra-bright solid-state SPS based on an atomic defect in hexagonal boron nitride (hBN) integrated with a solid immersion lens (SIL). The SIL increases the source efficiency by a factor of six, and the integrated system is capable of producing over ten million single photons per second at room temperature. Our results are promising for practical applications of SPS in quantum communication protocols.
Single photons are the key ingredient for many photonic quantum technologies including quantum key distribution and measurement-based quantum computing. However, it remains difficult to create devices with the appropriate specifications for use in non-laboratory environments. The optical microcavity platform provides an attractive route towards a room temperature single photon source device. Our ultra-small focused ion beam (FIB) milled open-access cavities offer enhancement of the spontaneous emission rate, tunability of the emission spectrum and increased light collection. The embedment of solid-state emitters within these cavities enables us to create a robust room temperature single photon source device, with the potential for high efficiencies and single photon purities. Defects such as the nitrogen-vacancy (NV) centre in diamond have been shown to be stable room-temperature sources of single photons. There are new single emitters emerging in two-dimensional materials such as hexagonal boron nitride (hBN). Here we present developments in room-temperature coupling of single defects to open-access microcavities of a planar-hemispherical geometry with mode volumes down to λ3. We report enhancements in the spectral density of photons into a single cavity mode, combined with improved single photon purities. It will be shown that the NV-cavity system provides a ~3% single photon emission efficiency with purities of up to 94%. The hBN-cavity system provides count rates >1Mcts/s into a single cavity mode with purities up to 96%. With these high single photon purities, such devices would be robust against photon number splitting attacks making them attractive for applications in quantum cryptography.
Abstract Quantum key distribution (QKD) is considered the most immediate application to be widely implemented among a variety of potential quantum technologies. QKD enables sharing secret keys between distant users by using photons as information carriers. An ongoing endeavor is to implement these protocols in practice in a robust, and compact manner so as to be efficiently deployable in a range of real‐world scenarios. Single photon sources (SPS) in solid‐state materials are prime candidates in this respect. This article demonstrates a room temperature, discrete‐variable quantum key distribution system using a bright single photon source in hexagonal‐boron nitride, operating in free‐space. Employing an easily interchangeable photon source system, keys with one million bits length, and a secret key of approximately 70000 bits, at a quantum bit error rate of 6%, with ε‐security of 10 −10 are generated. This study demonstrates the first proof of concept finite‐key BB84 QKD system realized with hBN defects.
Single photon sources based on single emitters such as 2D materials and impurities in diamond are of great interest for many application fields including quantum communication, quantum metrology and quantum sensing. In photometry and radiometry, a single photon source, having the ability to emit only one photon in a well-defined time and frequency domain, represents a promising candidate to realize a photon number-based primary standard for quantum radiometry. At the Korea Research Institute of Standards and Science (KRISS), we have realized three kinds of single photon sources based on various single emitters at room temperature: silicon vacancy in diamond, defects in gallium nitride (GaN), and vacancy in hexagonal boron nitride (hBN). We found common factors related with the relaxation times of the internal states that indirectly affect the photon number stability. We observed a high photon number stability in the GaN emitter due to faster relaxation times compared with the hBN emitter, which on the other hand produced high rates of photons per second (> 106). Moreover, we demonstrate repeatable radiant flux measurements of a bright hBN single photon emitter for a wide radiant flux range from a few tens of femtowatts to one picowatt.
Room temperature solid-state emitters provide a promising source of single photons for use in quantum technologies. The emitters studied in this thesis are the nitrogen-vacancy (NV) centre in diamond, and defects in two-dimensional hexagonal boron nitride (hBN). In this thesis, I present investigations into the coupling of these defects to open-access microcavities at room temperature. The optical microcavity serves to confine the electric field down to mode volumes on the order of λ3, increasing the spontaneous emission rate of these emitters and channelling this emission into well defined cavity modes. The general properties of both emitters will be presented, including examples of single photon emission, emission spectra, saturation behaviour and photo-stability. A few examples highlighting the long-term photo-stability of the NV centre under pulsed excitation will be displayed. This will highlight the suitability of the NV centre for a practical device. Following the preparation and characterisation of each emitter, single photon emission into the cavity modes is verified, reaching single photon purities greater than 97%. Enhancements in the spectral density of photons were observed for both the NV centre (~25×) and defect in hBN (~3×), along with decreases in the excited state lifetimes. While the NV centre provides a stable source of single photons, the cavity enhancement is limited by its broad emission spectrum. Defects in hBN present near-ideal optical properties in the absence of the cavity, and were expected to deliver superior results within the cavity. However, the poor photo-stability of these defects did not allow complete characterisation of the cavity coupled emission. FDTD simulations were combined with changes in the excited state lifetime to infer the quantum efficiency of these defects. The results of this thesis form the foundation for the realisation of a robust room temperature single photon source.