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arXiv:2108.06555 · npj Quantum Information

Probing defect densities at the edges and inside Josephson junctions of superconducting qubits

Alexander Bilmes, Serhii Volosheniuk, Alexey Vladimirovich Ustinov, Jürgen Lisenfeld

Published Mar 7, 2022• 29 citations
arXivHTMLPDF

Abstract

Abstract Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson junctions couple strongest to the qubit, which necessitates optimization of the junction fabrication to mitigate defect formation. Here, we investigate whether defects appear predominantly at the edges or deep within the amorphous tunnel barrier of a junction. For this, we compare defect densities in differently shaped Al/AlO x /Al Josephson junctions that are part of a Transmon qubit. We observe that the number of detectable junction-defects is proportional to the junction area, and does not significantly scale with the junction’s circumference, which proposes that defects are evenly distributed inside the tunnel barrier. Moreover, we find very similar defect densities in thermally grown tunnel barriers that were formed either directly after the base electrode was deposited, or in a separate deposition step after removal of native oxide by Argon ion milling.

DOI
10.1038/s41534-022-00532-4

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Abstract Tunneling defects in disordered materials form spurious two-level systems which are a major source of decoherence for micro-fabricated quantum devices. For superconducting qubits, defects in tunnel barriers of submicrometer-sized Josephson junctions couple strongest to the qubit, which necessitates optimization of the junction fabrication to mitigate defect formation. Here, we investigate whether defects appear predominantly at the edges or deep within the amorphous tunnel barrier of a junction. For this, we compare defect densities in differently shaped Al/AlO x /Al Josephson junctions that are part of a Transmon qubit. We observe that the number of detectable junction-defects is proportional to the junction area, and does not significantly scale with the junction’s circumference, which proposes that defects are evenly distributed inside the tunnel barrier. Moreover, we find very similar defect densities in thermally grown tunnel barriers that were formed either directly after the base electrode was deposited, or in a separate deposition step after removal of native oxide by Argon ion milling.
Abstract Superconducting integrated circuits have demonstrated a tremendous potential to realize integrated quantum computing processors. However, the downside of the solid-state approach is that superconducting qubits suffer strongly from energy dissipation and environmental fluctuations caused by atomic-scale defects in device materials. Further progress towards upscaled quantum processors will require improvements in device fabrication techniques, which need to be guided by novel analysis methods to understand and prevent mechanisms of defect formation. Here, we present a technique to analyse individual defects in superconducting qubits by tuning them with applied electric fields. This provides a spectroscopy method to extract the defects’ energy distribution, electric dipole moments, and coherence times. Moreover, it enables one to distinguish defects residing in Josephson junction tunnel barriers from those at circuit interfaces. We find that defects at circuit interfaces are responsible for about 60% of the dielectric loss in the investigated transmon qubit sample. About 40% of all detected defects are contained in the tunnel barriers of the large-area parasitic Josephson junctions that occur collaterally in shadow evaporation, and only ≈\approx≈ ≈ 3% are identified as strongly coupled defects, which presumably reside in the small-area qubit tunnel junctions. The demonstrated technique provides a valuable tool to assess the decoherence sources related to circuit interfaces and to tunnel junctions that is readily applicable to standard qubit samples.
Abstract Non-equilibrium quasiparticles are possible sources for decoherence in superconducting qubits because they can lead to energy decay or dephasing upon tunneling across Josephson junctions (JJs). Here, we investigate the impact of the intrinsic properties of two-dimensional transmon qubits on quasiparticle tunneling (QPT) and discuss how we can use quasiparticle dynamics to gain critical information about the quality of JJ barrier. We find the tunneling rate of the non-equilibrium quasiparticles to be sensitive to the choice of the shunting capacitor material and their geometry in qubits. In some devices, we observe an anomalous temperature dependence of the QPT rate below 100 mK that deviates from a constant background associated with non-equilibrium quasiparticles. We speculate that this behavior is caused by high transmission sites/defects within the oxide barriers of the JJs, leading to spatially localized subgap states. We model this by assuming that such defects generate regions with a smaller effective gap. Our results present a unique in situ characterization tool to assess the uniformity of tunnel barriers in qubit junctions and shed light on how quasiparticles can interact with various elements of the qubit circuit.
Parasitic two-level tunnelling systems originating from structural material defects affect the functionality of various microfabricated devices by acting as a source of noise. In particular, superconducting quantum bits may be sensitive to even single defects when these reside in the tunnel barrier of the qubit's Josephson junctions, and this can be exploited to observe and manipulate the quantum states of individual tunnelling systems. Here, we detect and fully characterize a system of two strongly interacting defects using a novel technique for high-resolution spectroscopy. Mutual defect coupling has been conjectured to explain various anomalies of glasses, and was recently suggested as the origin of low-frequency noise in superconducting devices. Our study provides conclusive evidence of defect interactions with full access to the individual constituents, demonstrating the potential of superconducting qubits for studying material defects. All our observations are consistent with the assumption that defects are generated by atomic tunnelling.
Superconducting quantum circuits are promising platforms for scalable quantum computing, where qubit coherence is critically determined by microscopic defects in the oxide tunneling barrier of Josephson junctions. Amorphous Al2_22​O3_33​ is widely used as a barrier material, but under irradiation, oxygen vacancy (VO_OO​) defects are readily generated, introducing noise sources that accelerate qubit decoherence. We systematically investigate the structural characteristics and electronic impact of VO_OO​ defects in amorphous Al2_22​O3_33​ using first-principles calculations and \textit{ab initio} molecular dynamics. Our results show that both the coordination environment and concentration of VO_OO​s strongly influence electrical conductivity. In particular, two- and three-coordinated VO_OO​s, unique to the amorphous structure, enhance conductivity more than conventional four-coordinated vacancies. Increasing VO_OO​ concentration amplifies conductivity fluctuations, which we link to critical current noise in Josephson junctions. Using a noise model, we estimate that higher VO_OO​ densities lead to shorter qubit coherence times. These findings provide insights for radiation-hard design of superconducting quantum devices.
The sensitivity of superconducting qubits allows for spectroscopy and coherence measurements on individual two-level systems present in the disordered tunnel barrier of an Al/AlOx\mathrm{Al}/{\mathrm{AlO}}_{x}Al/AlOx​/Al Josephson junction. We report experimental evidence for the decoherence of two-level systems by Bogoliubov quasiparticles leaking into the insulating AlOx{\mathrm{AlO}}_{x}AlOx​ barrier. We control the density of quasiparticles in the junction electrodes either by the sample temperature or by injecting them using an on-chip dc superconducting quantum interference device driven to its resistive state. The decoherence rates were measured by observing the two-level system's quantum state evolving under application of resonant microwave pulses and were found to increase linearly with quasiparticle density, in agreement with theory. This interaction with electronic states provides a noise and decoherence mechanism that is relevant for various microfabricated devices such as qubits, single-electron transistors, and field-effect transistors. The presented experiments also offer a possibility to determine the location of the probed two-level systems across the tunnel barrier, providing clues about the fabrication step in which they emerge.
Decoherence remains a critical obstacle to achieving high-fidelity, scalable superconducting qubits, with the tunnel barrier of Josephson junctions a key source of loss. Here we apply resonant X-ray reflectivity to non-destructively probe the electronic structure of buried layers in Al/AlOx_xx​/Al Josephson junctions. At the Al KKK-edge, energy-dependent modulations in the reflectivity maps enable Kramers-Kronig-constrained extraction of the layer-resolved atomic scattering factors. The analysis reveals that the barrier coordination evolves from more tetrahedral toward predominantly octahedral character with increasing oxidation pressure. At the interfaces, the lower metal-oxide boundary is comparatively under-coordinated and disordered relative to the upper interface. Comparison with simulated X-ray absorption spectra identifies the dominant coordination motifs within the oxide and its interfaces, providing depth-resolved structural insight that constrains microscopic models of two-level system formation. These results link growth conditions, local coordination environments, and junction electronic properties, demonstrating resonant X-ray reflectivity as a powerful tool for probing the microscopic materials properties of Josephson junctions and providing a materials-level framework for mitigating decoherence in superconducting qubits.