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arXiv:2103.01917 · Physical Review Applied

Electrical Tuning of Tin-Vacancy Centers in Diamond

Shahriar Aghaeimeibodi, Daniel Riedel, Alison E. Rugar, Constantin Dory, Jelena Vuckovic A

Published Jun 3, 2021• 37 citations
arXivHTMLPDF

Abstract

Many applications in quantum information processing require multiple, identical quantum emitters. Among various color centers in diamond, tin-vacancy centers draw attention because of their high quantum efficiency and long spin coherence. The authors study the shifts of optical-transition frequencies of these centers in an applied electric field, and importantly find that both the linear and quadratic coefficients are orders of magnitude smaller than those of non-inversion-symmetric defects such as nitrogen-vacancy centers. This low susceptibility allows the integration of tin-vacancy centers into photonic nanostructures, which is essential for efficient spin-photon interfaces.

DOI
10.1103/physrevapplied.15.064010

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Many applications in quantum information processing require multiple, identical quantum emitters. Among various color centers in diamond, tin-vacancy centers draw attention because of their high quantum efficiency and long spin coherence. The authors study the shifts of optical-transition frequencies of these centers in an applied electric field, and importantly find that both the linear and quadratic coefficients are orders of magnitude smaller than those of non-inversion-symmetric defects such as nitrogen-vacancy centers. This low susceptibility allows the integration of tin-vacancy centers into photonic nanostructures, which is essential for efficient spin-photon interfaces.
Color centers in diamond have attracted much interest as candidates for optically active, solid-state quantum bits. Of particular interest are inversion-symmetric color centers based on group-IV impurities in diamond because they emit strongly into their zero-phonon lines and are insensitive to electric field noise to first order. Early studies of the negatively charged tin-vacancy (${\mathrm{SnV}}^{\ensuremath{-}}$) center in diamond have found the ${\mathrm{SnV}}^{\ensuremath{-}}$ to be a promising candidate: it has high quantum efficiency, emits strongly into its zero-phonon lines, and is expected to have a long T2{T}_{2}T2​ spin coherence time at 4 K. To develop the ${\mathrm{SnV}}^{\ensuremath{-}}$ into a spin qubit requires further characterization, especially of the spin and optical properties of individual ${\mathrm{SnV}}^{\ensuremath{-}}$ in nanofabricated structures. In this work, we isolate single ${\mathrm{SnV}}^{\ensuremath{-}}$ centers in diamond nanopillars and characterize their emission properties and their spin response to a magnetic field. We observe narrow emission linewidths <250<250<250 MHz, as well as a strong polarization dependence of each transition. We also find the Zeeman splitting under a magnetic field to be in good agreement with theoretical prediction. Our results pave the way toward future employment of single ${\mathrm{SnV}}^{\ensuremath{-}}$ centers as optically accessible quantum memories.
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV -^{\,\textrm{-}}-) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV -^{\,\textrm{-}}- centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV -^{\,\textrm{-}}- centers in diamond. We integrate SnV -^{\,\textrm{-}}- centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons (90%90\%90%) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV -^{\,\textrm{-}}- centers in diamond.
Spin defects in diamond are attracting interest because of their possible application in quantum information processing. One group of such defects are group 4 defects (G4V). They posses an inversion symmetry, which makes them (in first order) invariant under electric fields, allowing them to be placed inside nanophotonic structures. One of those defects is the tin-vacancy (SnV) center. It has an atom like energy structure with the zero phonon line (ZPL) at 620 nm and a Debye-Waller factor of 0.6. The lower two branches are separated by 850 GHz [1], which means that phonon induced dephasing can be neglected at 2 K.
Tin-vacancy centers in diamond are promising spin-photon interfaces owing to their high quantum efficiency, large Debye-Waller factor, and compatibility with photonic nanostructuring. Benchmarking their single-photon indistinguishability is a key challenge for future applications. Here, we report the generation of single photons with 99.7_{-2.5}^{+0.3}% purity and 63(9)% indistinguishability from a resonantly excited tin-vacancy center in a single-mode waveguide. We obtain quantum control of the optical transition with 1.71(1)-ns-long π pulses of 77.1(8)% fidelity and show it is spectrally stable over 100 ms. A modest Purcell enhancement factor of 12 would enhance the indistinguishability to 95%.