The concept of non-trivial electronic topology in condensed matter physics is crucial for understanding the electronic spectrum of solids and for tailoring various thermodynamic and transport properties, useful for real-world applications. Research on topological insulators and superconductors primarily utilizes the electronic band theory and symmetry classes of gapped quantum systems, with the existence of spectral or mobility gaps ensured even in the presence of impurities and defects. However, structural disorder, naturally manifested in materials such as glasses and amorphous solids, can significantly impact the critical properties of phase transitions in topological quantum matters. This dissertation systematically studies topological phase transitions in non-crystalline free-fermion systems via tight-binding quantum Hamiltonians on 2D random geometries. Leveraging various theoretical and experimentally accessible measures, we demonstrate the resilience of topological phases in non-crystalline systems against structural randomness, described by classical percolation theory, and characterize their unique critical behavior through finite-size scaling. We also extend the notion of amorphous topological states to non-integer dimensional random systems. We reveal that these 2D-embedded random fractals can admit well-defined thermodynamic topological phases with unconventional critical properties. We further study quantum dynamics in these random topological systems. By employing a family of discrete-time topological quantum walks on random percolation lattices, we address wavefunction propagation, superdiffusive quantum speedup, and localization transition by identifying the critical probabilities and timescales. Lastly, we introduce topological lattices with adjustable spatial correlation to investigate Landau levels and quantum oscillations in a low magnetic field regime.
We investigate disorder-driven transitions between trivial and topological insulator (TI) phases in two-dimensional (2D) systems. Our study primarily focuses on the Bernevig-Hughes-Zhang (BHZ) model with Anderson disorder, while other standard 2D TI models exhibit equivalent features. The analysis is based on the local Chern marker (LCM), a local quantity that allows for the characterization of topological transitions in finite and disordered systems. Our simulations indicate that disorder-driven trivial to topological insulator transitions are nicely characterized by
C0, the disorder-averaged LCM near the central cell of the system. We show that
C0 is characterized by a single-parameter scaling, namely, ${\mathcal{C}}_{0}(M,W,L)\ensuremath{\equiv}{\mathcal{C}}_{0}(z)$, with $z=[{W}^{\ensuremath{\mu}}\ensuremath{-}{W}_{c}^{\ensuremath{\mu}}(M)]L$, where
M is the Dirac mass,
W is the disorder strength, and
L is the system size, while ${W}_{c}(M)\ensuremath{\propto}\sqrt{M}$ and $\ensuremath{\mu}\ensuremath{\approx}2$ stand for the critical disorder strength and the critical exponent, respectively. Our numerical results are in agreement with a theoretical prediction based on a first-order Born approximation analysis. These observations lead us to speculate that the universal scaling function we have found is rather general for amorphous and disorder-driven topological phase transitions.