Microscopic relaxation channels in materials for superconducting qubits
Anjali Premkumar, Conan R. Weiland, Sooyeon Hwang, Berthold Jäck, Alexander P. M. Place, Iradwikanari Waluyo, Adrian H. Hunt, Valentina Bisogni, Jonathan Pelliciari, Andi Barbour, Mike S. Miller, Paola Russo, Fernando Camino, Kim Kisslinger, Xiao Tong, Mark S. Hybertsen, Andrew Houck, Ignace Jarrige
Abstract Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we combine measurements of transmon qubit relaxation times ( T 1 ) with spectroscopy and microscopy of the polycrystalline niobium films used in qubit fabrication. By comparing films deposited using three different techniques, we reveal correlations between T 1 and intrinsic film properties such as grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Qubit and resonator measurements show signatures of two-level system defects, which we propose to be hosted in the grain boundaries and surface oxides. We also show that the residual resistance ratio of the polycrystalline niobium films can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
Abstract Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we combine measurements of transmon qubit relaxation times ( T 1 ) with spectroscopy and microscopy of the polycrystalline niobium films used in qubit fabrication. By comparing films deposited using three different techniques, we reveal correlations between T 1 and intrinsic film properties such as grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Qubit and resonator measurements show signatures of two-level system defects, which we propose to be hosted in the grain boundaries and surface oxides. We also show that the residual resistance ratio of the polycrystalline niobium films can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood.Here, we combine measurements of transmon qubit relaxation times (T 1 ) with spectroscopy and microscopy of the polycrystalline niobium films used in qubit fabrication.By comparing films deposited using three different techniques, we reveal correlations between T 1 and intrinsic film properties such as grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface.Qubit and resonator measurements show signatures of two-level system defects, which we propose to be hosted in the grain boundaries and surface oxides.We also show that the residual resistance ratio of the polycrystalline niobium films can be used as a figure of merit for qubit lifetime.This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.
Improving qubit lifetime is essential for fault-tolerant quantum computing. It is widely acknowledged that intricate processing techniques introduce defects at the interfaces and surfaces of superconducting quantum circuits, which can create sources of decoherence. Therefore, a precise understanding of how a material's structure contributes to decoherence is critical for enhancing the performance of superconducting qubits. This talk highlights our recent advancements in understanding surface oxides in resonators and ultrathin aluminum oxide barriers in Josephson junctions (JJs) using transmission electron microscopy and spectroscopy techniques [1-4]. The Superconducting Quantum Materials & Systems Center (SQMS) demonstrated that encapsulating niobium surfaces with a ∼10nm tantalum layer results in 2-5x longer T1 than bare niobium [2]. Our collaborative investigation shows that this improvement is attributed to tantalum's less lossy surface oxide, which contains fewer sub-oxides than niobium oxide. Moreover, the amorphous Ta2O5 shows a bonding nature closer to crystalline form than amorphous Nb2O5, potentially reducing hydrogen diffusion toward the oxide/metal interface [1, 2]. Moreover, we will briefly discuss our preliminary study of the thin film structure under cryogenic conditions down to 20K, conducted using a liquid helium TEM holder in a Thermo Cs-corrected Titan. We also explored the effect of aluminum deposition rates on aluminum oxide microstructure and qubit lifetime. Although increasing the deposition rate from 0.5 Å/s to 5 Å/s significantly improved oxide layer roughness and thickness variation, the qubits’ coherence remained unchanged. This is likely due to Cooper pairs only tunneling through the thinnest parts of the barrier, making them less affected by the grain boundaries in the thin aluminum films. Additionally, we uncovered a stress-induced grain boundary sliding mechanism, which contributes to short-circuit failures in JJs [4]. Our discovery provides vital insight into oxide microstructure and superconducting qubits’ functionality [5].
Superconducting thin films of niobium have been extensively employed in transmon qubit architectures. Although these architectures have demonstrated improvements in recent years, further improvements in performance through materials engineering will aid in large-scale deployment. Here, we use information retrieved from secondary ion mass spectrometry and electron microscopy to conduct a detailed assessment of the surface oxide that forms in ambient conditions for transmon test qubit devices patterned from a niobium film. We observe that this oxide exhibits a varying stoichiometry with NbO and NbO 2 found closer to the niobium film/oxide interface and Nb 2 O 5 found closer to the surface. In terms of structural analysis, we find that the Nb 2 O 5 region is semicrystalline in nature and exhibits randomly oriented grains on the order of 1–3 nm corresponding to monoclinic N–Nb 2 O 5 that are dispersed throughout an amorphous matrix. Using fluctuation electron microscopy, we are able to map the relative crystallinity in the Nb 2 O 5 region with nanometer spatial resolution. Through this correlative method, we observe that the highly disordered regions are more likely to contain oxygen vacancies and exhibit weaker bonds between the niobium and oxygen atoms. Based on these findings, we expect that oxygen vacancies likely serve as a decoherence mechanism in quantum systems.
ABSTRACT Niobium (Nb) films have emerged as a crucial material in the development of superconducting qubits, which are key components in quantum computing technology. This review provides a comprehensive examination of Nb films from a materials perspective, focusing on their intrinsic properties, fabrication methods/techniques, and their influence on qubit performance, particularly through surface and interface driven loss mechanisms. We discuss the key material properties that are essential for qubit operation. Various deposition techniques for Nb thin films, such as sputtering, evaporation, molecular beam epitaxy, and atomic layer deposition, are explored, alongside their impact on film quality, uniformity, and qubit performance. Additionally, the influence of surface roughness, thin‐film thickness, and substrate materials on quantum coherence is analyzed. Challenges such as defects and material degradation in Nb films are reviewed, along with strategies to mitigate these issues. Finally, we present the latest advancements and future directions in Nb film research, including potential improvements to enhance qubit coherence and scalability for large‐scale quantum computing systems. Ultimately, a deeper understanding of surface and interface phenomena is essential for pushing the limits of qubit performance and realizing next‐generation quantum technologies.
Niobium is commonly used for superconducting quantum systems as readout resonators, capacitors, and interconnects. The coherence time of the superconducting qubits is mainly limited by microwave dissipation attributed to two-level system defects at interfaces, such as the Nb/Si and Nb/air interface. One way to improve the Nb/air interface quality is by thermal annealing, as shown by extensive studies in 3D superconducting radio frequency (SRF) cavities. However, it is unclear how the microstructure and chemistry of the interface structures change during heat treatment. To address this knowledge gap, we comprehensively characterized Nb films deposited on Si wafers by physical vapor deposition, including (1) an Nb film from a transmon and (2) an Nb film without any patterning step, using an aberration-corrected transmission electron microscope. Both Nb films exhibit columnar growth with strong [110] textures. There is a double layer between the Nb film and Si substrate, which are amorphous niobium silicides with different Nb and Si concentrations. After in-situ heating of the heterostructure at 360°C inside the microscope, the composition of the double layers at the Nb-Si interface remains almost the same despite different thickness changes. The initial amorphous niobium oxide layer on Nb surface decomposes into face-centered cubic Nb nanograins in the amorphous Nb-O matrix upon heating.
Materials improvements in transmon qubits have yielded remarkable advances in qubit lifetimes (T1)and coherence times (T2). However, state-of-the-art superconducting qubits experience temporal fluctuations in their performance, which limit gate fidelities and quantum processor performance. We observe correlated increases in qubit relaxation and dephasing rates that last for minutes to hours, which we call T1 and T2 excursions. Using interleaved lifetime and coherence time measurements, noise spectroscopy, and two-level-system (TLS) spectroscopy, we find that these excursions are caused by single or few strongly-coupled TLS defects that spectrally diffuse into resonance with the qubit frequency. Our measurement protocol provides a powerful tool for understanding the noise sources that cause temporal fluctuations in superconducting qubit performance.