Recent achievements in the field of gate-defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit resonator photons. In this paper, we theoretically demonstrate a versatile set of quantum gates between adjacent spin qubits defined in semiconductor quantum dots situated within the same node of such a spin-based quantum computer. The electric dipole acquired by the spin of an electron that moves across a double quantum dot potential in a magnetic field gradient has enabled strong coupling to resonator photons and low-power spin control. Here we show that this flopping-mode spin qubit also provides the tunability to program multiple two-qubit gates. Since the capacitive coupling between these qubits brings about additional dephasing, we calculate the estimated infidelity of different two-qubit gates in the most immediate possible experimental realizations.
Recent achievements in the field of gate-defined semiconductor quantum dots reinforce the concept of a spin-based quantum computer consisting of nodes of locally connected qubits which communicate with each other via superconducting circuit resonator photons. In this paper, we theoretically demonstrate a versatile set of quantum gates between adjacent spin qubits defined in semiconductor quantum dots situated within the same node of such a spin-based quantum computer. The electric dipole acquired by the spin of an electron that moves across a double quantum dot potential in a magnetic field gradient has enabled strong coupling to resonator photons and low-power spin control. Here we show that this flopping-mode spin qubit also provides the tunability to program multiple two-qubit gates. Since the capacitive coupling between these qubits brings about additional dephasing, we calculate the estimated infidelity of different two-qubit gates in the most immediate possible experimental realizations.
Semiconductor-based spin qubits embedded into a superconducting microwave cavity constitute a fast-progressing and promising platform for realizing fast and fault-tolerant qubit control with long-range two-qubit coupling. The flopping-mode spin qubit consists of a single electron in a double quantum dot; it combines a charge qubit with a spin qubit. With its strong and tunable cavity coupling, the flopping-mode qubit is proven to be well suited for low-power qubit control and cavity-mediated long-range quantum gates. The singlet-triplet (ST) and exchange-only (EO) qubits are multielectron realizations that go without broadband control and are protected from some types of noise, but are challenging to couple to each other and to microwave cavities. We combine the flopping-mode concept with the ST and EO qubits and propose two new flopping-mode qubits that consist of three (four) quantum dots, occupied by two (three) electrons near the ( 1 , 0 , 1 ) ↔ ( 0 , 1 , 1 ) [ ( 1 , 0 , 1 , 1 ) ↔ ( 0 , 1 , 1 , 1 ) ] charge transition. The two-electron system augments the ST 0 spin qubit with a charge qubit that interacts transversally and longitudinally with a cavity. Both couplings are highly tunable, and the longitudinal coupling distinguishes the flopping-mode ST qubit from the regular flopping-mode qubit. The longitudinal coupling allows for nondissipative universal control similar to superconducting transmon qubits. The EO flopping-mode qubit comprises four dots occupied by three electrons and opens a new possibility to perform two-qubit gates for EO qubits that are challenging to perform directly with the exchange coupling. We use input-output theory to provide means of extracting the coupling strengths from cavity transmission data.
We report on our recent progress in applying semiconductor quantum dots for spin-based quantum computation, as proposed by Loss and DiVincenzo (1998 Phys. Rev. A 57 120). For the purpose of single-electron spin resonance, we study different types of single quantum dot devices that are designed for the generation of a local ac magnetic field in the vicinity of the dot. We observe photon-assisted tunnelling as well as pumping due to the ac voltage induced by the ac current driven through a wire in the vicinity of the dot, but no evidence for ESR so far. Analogue concepts for a double quantum dot and the hydrogen molecule are discussed in detail. Our experimental results in laterally coupled vertical double quantum dot device show that the Heitler–London model forms a good approximation of the two-electron wavefunction. The exchange coupling constant J is estimated. The relevance of this system for two-qubit gates, in particular the SWAP operation, is discussed. Density functional calculations reveal the importance of the gate electrode geometry in lateral quantum dots for the tunability of J in realistic two-qubit gates.
A crucial requirement for scalable quantum-information processing is the realization of multiple-qubit quantum gates. Universal multiple-qubit gates can be implemented by a set of universal single qubit gates and any one kind of two-qubit gate, such as a controlled-NOT (CNOT) gate. Semiconductor quantum dot qubits are a leading approach for the physical implementation of quantum computation, due to their potential for large-scale integration. Two-qubit gate operations have been so far only demonstrated in individual electron spin-based quantum dot systems. Due to the relatively short de-coherence time, charge qubits in quantum dots are generally considered to be inferior for going beyond single qubit level. Here, we demonstrate the benchmarking CNOT gate in two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 5GHz has been realized. A processing tomography shows encouragingly that the universal two-qubit gate operations have comparable fidelities to that of spin-based two-qubit gates. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.
Abstract The implementation of high fidelity two-qubit gates is a bottleneck in the progress toward universal quantum computation in semiconductor quantum dot qubits. We study capacitive coupling between two triple quantum dot spin qubits encoded in the S = 1/2, Sz = −1/2 decoherence-free subspace—the exchange-only (EO) spin qubits. We report exact gate sequences for CPHASE and CNOT gates, and demonstrate theoretically, the existence of multiple two-qubit sweet spots (2QSS) in the parameter space of capacitively coupled EO qubits. Gate operations have the advantage of being all-electrical, but charge noise that couple to electrical parameters of the qubits cause decoherence. Assuming noise with a 1/f spectrum, two-qubit gate fidelities and times are calculated, which provide useful information on the noise threshold necessary for fault-tolerance. We study two-qubit gates at single and multiple parameter 2QSS. In particular, for two existing EO implementations—the resonant exchange (RX) and the always-on exchange-only (AEON) qubits—we compare two-qubit gate fidelities and times at positions in parameter space where the 2QSS are simultaneously single-qubit sweet spots (1QSS) for the RX and AEON. These results provide a potential route to the realization of high fidelity quantum computation.
Universal multiple-qubit gates can be implemented by a set of universal single-qubit gates and any one kind of entangling two-qubit gate, such as a controlled-NOT gate. For semiconductor quantum dot qubits, two-qubit gate operations have so far only been demonstrated in individual electron spin-based quantum dot systems. Here we demonstrate the conditional rotation of two capacitively coupled charge qubits, each consisting of an electron confined in a GaAs/AlGaAs double quantum dot. Owing to the strong inter-qubit coupling strength, gate operations with a clock speed up to 6 GHz have been realized. A truth table measurement for controlled-NOT operation shows comparable fidelities to that of spin-based two-qubit gates, although phase coherence is not explicitly measured. Our results suggest that semiconductor charge qubits have a considerable potential for scalable quantum computing and may stimulate the use of long-range Coulomb interaction for coherent quantum control in other devices.
Achieving high-fidelity two-qubit gates is crucial for spin qubits in silicon-based double quantum dots. However, these gates are sensitive to charge noise in experimental settings, which remains a significant challenge. Geometric gates, which utilize pure geometric phases for gate operations, are a promising approach to achieving robust control. In this work, we theoretically propose a feasible strategy to implement geometric two-qubit gates for silicon-based spin qubits considering experimental control environments. By operating in the suitable region where the local magnetic field gradient is significantly larger than the exchange interaction, we can implement both entangling and nonentangling geometric gates through analytical and numerical methods. It is found that the geometric gates obtained are highly compatible with existing experimental techniques using electric dipole spin resonance in silicon. Moreover, the implemented geometric controlled-Z (CZ) gates can achieve fidelities exceeding 99% under experimental noise levels and the gate times are as short as 20 ns. Our work paves the way for the realization of high-fidelity geometric two-qubit gates for spin qubits in silicon.