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arXiv:1912.04415 · Physical review. B./Physical review. B

Tuning spatial entanglement in interacting two-electron quantum dots

Dung Ngoc Pham, Sathwik Bharadwaj, L. R. Ram‐Mohan

Published Jan 30, 2020• 10 citations
arXivHTMLPDF

Abstract

Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this paper, we employ a variational formulation for calculating accurate two-electron wavefunctions in configuration space, irrespective of potential geometry. To evaluate the Coulomb integrals with high accuracy, a numerical integration method using multiple Gauss quadratures is used. With this approach, we investigate the confinement of two electrons in double quantum dots, and evaluate the spatial entanglement. We investigate the dependence of spatial entanglement on various geometrical parameters. We derive the two-particle wavefunctions in the asymptotic limit of the separation distance between quantum dots and obtain universal saturation values for the spatial entanglement. Resonances in the entanglement values due to avoided level crossings of states are observed. We also demonstrate the formation of electron clusters and show that the entanglement value is a good indicator for the formation of such clusters. Further, we show that a precise tuning of the entanglement values is feasible with applied external electric fields.

DOI
10.1103/physrevb.101.045306

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Semiconductor quantum dots (QDs) are one of the leading candidates for realizable qubits, as well as for many other advances in quantum computing and quantum communication. The spatial overlapping of wavefunctions describing each single electron in these nanoscale devices results in tunable spatial entanglement. In this article, we explore the case of two electrons in two-dimensional double quantum dot systems. We compute the two-particle wavefunction through a variational method combined with Hermite finite elements and study the spatial entanglement of electrons. We show that symmetry in the geometry of the double quantum dots plays a role in obtaining optimal entanglement, while a broken symmetry can lead to additional resonances in entanglement that are associated with the crossings of states. We also show that one can finely tune the level of spatial entanglement by altering the geometry of the quantum dots or by applying external fields, which corresponds to an “entanglement spectroscopy.” Finally, we study how impurities in the potential profile of the QDs affect the level of entanglement.
We calculate the spatial entanglement between two electrons trapped in a nanostructure for a broad class of confinement potentials, including single and double quantum dots, and core-shell quantum dot structures. By using a parametrized confinement potential, we are able to switch from one structure to the others with continuity and to analyze how the entanglement is influenced by the changes in the confinement geometry. We calculate the many-body wave function by ``exact'' diagonalization of the time-independent Schr\"odinger equation. We discuss the relationship between the entanglement and specific cuts of the wave function, and show that the wave function at a single highly symmetric point could be a good indicator for the entanglement content of the system. We analyze the counterintuitive relationship between spatial entanglement and Coulomb interaction, which connects maxima (minima) of the first to minima (maxima) of the latter. We introduce a potential quantum phase transition which relates quantum states characterized by different spatial topology. Finally we show that by varying shape, range, and strength of the confinement potential, it is possible to induce strong and rapid variations in the entanglement between the two electrons. This property may be used to tailor nanostructures according to the level of entanglement required by a specific application.
Abstract We investigate the influence of quartic anharmonic confinement on spatial entanglement in two-electron quantum dots. By transforming the Hamiltonian into center-of-mass and relative coordinates, we develop a computational framework combining variational methods, Numerov integration, and Monte Carlo evaluation of linear entropy. We demonstrate that anharmonicity reduces the equilibrium inter-electronic separation, leading to enhanced Coulomb correlations and increased entanglement. In the weakly anharmonic regime, the linear entropy exhibits an approximately linear dependence on the anharmonicity parameter. The results are validated through convergence analysis and comparison with known harmonic-limit results. These findings establish anharmonic confinement as a controllable mechanism for tuning entanglement in semiconductor quantum dots, with potential applications in quantum information processing.
Finding efficient methods for controlling entanglement is an important issue in quantum information processing. Here, we inspect theoretically possible ways for tuning orbital and spin entanglement of two interacting particles confined to a double quantum dot with spin-orbit coupling (SOC) which renders possible the coupling of spin to an external electric field. The entanglement in the spin part is sensitive to a transverse electric field. We show that through the field-induced SOC the entanglement of the spin subsystem can be slightly increased; the effect of a longitudinal electric field is more subtle: For a small interdot distance, a longitudinal electric field enhances substantially the entanglement of spins, while for a large interdot distance it has no impact. An external longitudinal electric field has a minor effect on the entanglement in the orbital part irrespective of the interdot distance. We trace back this observed phenomenon to a combined effect of the applied external electric field and the overlap of wave functions which is enhanced for decreasing interdot distances. As a result, at large interdot separation, the concurrence of the two-electron states turns insensitive to the applied electric field.
We model quantum dot nanostructures using a one-dimensional system of two interacting electrons. We show that strong and rapid variations may be induced in the spatial entanglement by varying the nanostructure geometry. We investigate the position-space information entropy as an indicator of the entanglement in this system. We also consider the expectation value of the Coulomb interaction and the ratio of this expectation to the expectation of the confining potential and their link to the entanglement. We look at the first derivative of the entanglement and the position-space information entropy to infer information about a possible quantum phase transition.
Tuning spin-orbit coupling is essential in controlling both spin and charge in confined semiconductor nanostructures, yet it is rarely a truly controllable parameter. Here, we show control over the spin-orbit Hamiltonian in quantum dots and the resulting quantum states by tailoring the confinement potential with atomic-scale precision. Using scanning tunnelling microscopy and spectroscopy, we pattern individual Cs ions into designer quantum dot structures on the surface of indium antimonide, in which electrons from a two-dimensional electron gas are confined with chosen in-plane electric-field gradients. We then quantify the atomic level structure, both spatially resolving the orbital character of the electronic states and their magnetic-field evolution. We demonstrate that the level structure, including the induced zero-field splitting, can be tailored by the designed geometry of the local electric fields. These effects can be described using a Hamiltonian that allows consistent treatment of the confinement-induced spin-orbit coupling beyond the conventional Bychkov-Rashba description. This Hamiltonian is derived from a multiband k.p model and takes the energy dependence of the relevant physical parameters into account. Such precise control of spin-orbit coupling in semiconductor quantum dots is relevant to quantum and spintronic technologies.