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arXiv:1003.3781 · Journal of Applied Physics

Geometry induced entanglement transitions in nanostructures

J. P. Coe, S. Abdullah, Irene D’Amico

Published Apr 21, 2010• 3 citations
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Abstract

We model quantum dot nanostructures using a one-dimensional system of two interacting electrons. We show that strong and rapid variations may be induced in the spatial entanglement by varying the nanostructure geometry. We investigate the position-space information entropy as an indicator of the entanglement in this system. We also consider the expectation value of the Coulomb interaction and the ratio of this expectation to the expectation of the confining potential and their link to the entanglement. We look at the first derivative of the entanglement and the position-space information entropy to infer information about a possible quantum phase transition.

DOI
10.1063/1.3364065

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We model quantum dot nanostructures using a one-dimensional system of two interacting electrons. We show that strong and rapid variations may be induced in the spatial entanglement by varying the nanostructure geometry. We investigate the position-space information entropy as an indicator of the entanglement in this system. We also consider the expectation value of the Coulomb interaction and the ratio of this expectation to the expectation of the confining potential and their link to the entanglement. We look at the first derivative of the entanglement and the position-space information entropy to infer information about a possible quantum phase transition.
We calculate the spatial entanglement between two electrons trapped in a nanostructure for a broad class of confinement potentials, including single and double quantum dots, and core-shell quantum dot structures. By using a parametrized confinement potential, we are able to switch from one structure to the others with continuity and to analyze how the entanglement is influenced by the changes in the confinement geometry. We calculate the many-body wave function by ``exact'' diagonalization of the time-independent Schr\"odinger equation. We discuss the relationship between the entanglement and specific cuts of the wave function, and show that the wave function at a single highly symmetric point could be a good indicator for the entanglement content of the system. We analyze the counterintuitive relationship between spatial entanglement and Coulomb interaction, which connects maxima (minima) of the first to minima (maxima) of the latter. We introduce a potential quantum phase transition which relates quantum states characterized by different spatial topology. Finally we show that by varying shape, range, and strength of the confinement potential, it is possible to induce strong and rapid variations in the entanglement between the two electrons. This property may be used to tailor nanostructures according to the level of entanglement required by a specific application.
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Confined geometries such as semiconductor quantum dots are promising candidates for fabricating quantum computing devices. When several quantum dots are in proximity, spatial correlation between electrons in the system becomes significant. In this paper, we employ a variational formulation for calculating accurate two-electron wavefunctions in configuration space, irrespective of potential geometry. To evaluate the Coulomb integrals with high accuracy, a numerical integration method using multiple Gauss quadratures is used. With this approach, we investigate the confinement of two electrons in double quantum dots, and evaluate the spatial entanglement. We investigate the dependence of spatial entanglement on various geometrical parameters. We derive the two-particle wavefunctions in the asymptotic limit of the separation distance between quantum dots and obtain universal saturation values for the spatial entanglement. Resonances in the entanglement values due to avoided level crossings of states are observed. We also demonstrate the formation of electron clusters and show that the entanglement value is a good indicator for the formation of such clusters. Further, we show that a precise tuning of the entanglement values is feasible with applied external electric fields.
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The entanglement entropy of the ν=1/3 and ν=5/2 quantum Hall states in the presence of short-range random disorder has been calculated using direct diagonalization. A microscopic model of electron–electron interaction is used and spin-polarized electrons are confined to a single Landau level and interact with long-range Coulomb interaction. In the case of very weak disorder, the values of topological entanglement entropy are roughly consistent with the expected theoretical results. By considering a broad range of disorder strengths, entanglement entropy was studied in an effort to detect quantum phase transitions. In particular, there is a signature of the transition as the function of the disorder strength for the ν=5/2 state. Prospects of using the density matrix renormalization group to compute the entanglement entropy for larger system sizes are discussed.
We present a detailed analysis of the electronic and optical properties of two-electron quantum dots with a two-dimensional Gaussian confinement potential. We study the effects of Coulomb impurities and the possibility of manipulating the entanglement of the electrons by controlling the confinement potential parameters. The degree of entanglement becomes highly modulated by both the location and charge screening of the impurity atom, resulting in two regimes: one of low entanglement and the other of high entanglement, with both of them mainly determined by the magnitude of the charge. It is shown that the magnitude of the oscillator strength of the system could provide an indication of the presence and characteristics of impurities and, therefore, the degree of entanglement.