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arXiv:1909.11976

Superconducting charge sensor coupled to an electron layer in silicon

Máté Jenei, Ruichen Zhao, Kuan Yen Tan, Tuomo Tanttu, K. W. Chan, Yuxin Sun, Vasilii Sevriuk, Fay E. Hudson, Alessandro Rossi, Andrew S. Dzurak, Mikko Möttönen

Published Sep 26, 2019• 0 citations
arXivHTMLPDF

Abstract

Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as an additional gate electrode. We study the reliability of the electron sensor in different device configurations and the suitability of various operation modes for error detection in electron pumping experiments. As a result, we obtain a charge detection bandwidth of 5.87 kHz with unity signal to noise ratio at 300 mK bath temperature.

DOI
10.48550/arxiv.1909.11976

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Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We study the coupling of a superconducting Josephson-junction-based charge detector to an electron island defined by field-effect in silicon. The flexibility of our device allows one to tune the coupling using the detector as an additional gate electrode. We study the reliability of the electron sensor in different device configurations and the suitability of various operation modes for error detection in electron pumping experiments. As a result, we obtain a charge detection bandwidth of 5.87 kHz with unity signal to noise ratio at 300 mK bath temperature.
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservoirs. Here we exploit the tunneling between two quantized states in a double-island single-electron transistor (SET) to demonstrate a charge sensor with an improvement in the signal-to-noise ratio by an order of magnitude compared to a standard SISET, and a single-shot charge readout fidelity above 99% up to 8 K at a bandwidth greater than 100 kHz. These improvements are consistent with our theoretical modeling of the temperature-dependent current transport for both types of SETs. With minor additional hardware overhead, these sensors can be integrated into existing qubit architectures for a high-fidelity charge readout at few-kelvin temperatures.
In this work four different mesoscopic superconducting devices have been experimentally studied: an ammeter based on a hysteretic Josephson junction switching from the superconducting state to the normal state, a conventional Cooper pair pump (CPP) based on two superconducting islands separated by tunnel junctions, a novel flux assisted Cooper pair pump and a thermometer based on a tunnel junction between a superconductor and a normal metal. These devices make use of phenomena related to superconductivity and are also benefiting from some properties of small structures, e.g., of quantum mechanical tunneling and of transport of single electrons. The present research focused on investigating performance limitations of these devices and the aim was to improve their performance. A hysteretic Josephson junction switching can be used as a sensitive current threshold detector. For many purposes, a smaller critical current Ic of the detecting junction would yield a higher current sensitivity. It was found in this Thesis that the main limitation of the ammeter is that with increasing sensitivity the negative effects due to dissipation start to dominate. In this Thesis the Josephson junction was also demonstrated as a shot-noise detector, and it was concluded that this kind of a device could probably be made into an absolute on-chip detector of Fano-factors and noise in general. A charge pump is a device which can periodically transfer a discrete amount of charge Q through an electrical circuit. The measured double island CPP introduced a frequency dependent current with a value close to the expected one at low pumping frequencies. The drawback in the measurements was that the direction of the pumped current was set by the bias voltage. The results of the measurement on flux assisted pumping were indeed very promising and the studied device was able to produce sufficiently high pumped currents of around 0.1 nA with reasonable accuracy. Thermometer based on NIS (Normal metal - Insulator - Superconductor) tunnel junctions is a very promising temperature sensor for bolometric radiation sensor applications. This work showed that it can be used as a sensitive thermometer up to MHz frequencies range and that its response time is limited by the electron-phonon scattering rate.
We consider the hybrid setup formed by a metallic dot, capacitively coupled to a superconducting island SSS connected to a bulk superconductor by a Josephson junction. Charge fluctuations in SSS act as a dynamical gate and overscreen the electronic repulsion in the metallic dot, producing an attractive interaction between two additional electrons. As the offset charge of the metallic dot is increased, the dot charging curve shows charge-skipping positive steps $(+2\ensuremath{\mid}e\ensuremath{\mid})$ followed by negative ones $(\ensuremath{-}\ensuremath{\mid}e\ensuremath{\mid})$ signaling the occurrence of a negative differential capacitance. A necessary condition for such an effect is that the capacitance coupling the two islands should be larger than the Josephson junction capacitance. A proposal for experimental detection is given, and potential applications in nanoelectronics are outlined.
Charge detection at microsecond time-scales has far reaching consequences in both technology and in our understanding of electron dynamics in nanoscale devices such as quantum dots. Radio-frequency superconducting single electron transistors (RF-SET) and quantum point contacts (QPC) are ultra sensitive charge sensors operating near the quantum limit. The operation of RF-SETs outside the superconducting gap has been a topic of study; the sub-gap operation, especially in the presence of large quantum fluctuations of quasiparticles remains largely unexplored, both theoretically and experimentally. We have investigated the effects of quantum fluctuations of quasiparticles on the operation of RF-SETs for large values of the quasiparticle cotunneling parameter alpha = 8EJ/Ec, where EJ and Ec are the Josephson and charging energies. We find that, for alpha > 1, sub-gap RF-SET operation is still feasible despite quantum fluctuations that wash out quasiparticle tunneling thresholds. Such RF-SETs show linearity and signal-to-noise ratio superior to those obtained when quantum fluctuations are weak, while still demonstrating excellent charge sensitivity.\nWe have operated a QPC charge detector in a radio frequency mode that allows fast charge detection in a bandwidth of several megahertz. The noise limiting the sensitivity of the charge detector is not the noise of a secondary amplifier, but the non-equilibrium device noise of the QPC itself. The noise power averaged over a measurement bandwidth of about 10MHz around the carrier frequency is in agreement with the theory of photon-assisted shot noise. Frequency-resolved measurements, however show several significant discrepancies with the theoretical predictions. The measurement techniques developed can also be used to investigate the noise of other semiconductor nanostructures such as quantum dots in the Kondo regime.\nA study of the noise characteristics alone can not determine whether the device is operating at the quantum limit; a characterization of back action is also necessary. The inelastic current through a double quantum dot system (DQD) is sensitive to the spectral density of voltage fluctuations in its electromagnetic environment. Electrical transport studies on a DQD system electrostatically coupled to an SET shows qualitative evidence of back-action of SET. The design and fabrication of a few electron DQD device with integrated RF-SET and QPC charge sensors for the study of back action of the sensors and real-time electron dynamics in the DQD are also discussed.
We present a single-electron device for the manipulation of charge states via quantum interference in nanostructured electrodes. Via self-inductance effects, we induce two independent magnetic fluxes in the electrodes and we demonstrate sensitivity to single charge states and magnetic field at variable temperature. Moreover, our approach allows us to demonstrate local and independent control of the single-particle conductance between nano-engineered tunnel junctions in a fully superconducting quantum interference single-electron transistor, thereby increasing the flexibility of our single-electron transistors. Our devices show a robust modulation of the current-to-flux transfer function via control currents while exploiting the single-electron filling of a mesoscopic superconducting island. Further applications of the device concept to single charge manipulation and magnetic-flux sensing are also discussed.
We introduce a Cooper pair "sluice" for the implementation of a frequency-locked current source. The device consists of two mesoscopic SQUIDs and of a single superconducting island with a gate. We demonstrate theoretically that it is possible to obtain a current as high as 0.1 nA at better than ppm accuracy via periodically modulating both the gate charge and the effective Josephson coupling. We find that the device is tolerant against background charge noise and operates well even in a dissipative environment. The effect of the imperfect suppression of the Josephson coupling and the finite operating frequency are also investigated.