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arXiv:1909.09383 · Applied Physics Letters

Single photon emission and single spin coherence of a nitrogen vacancy center encapsulated in silicon nitride

Joe A. Smith, Jorge Monroy-Ruz, John G. Rarity, Krishna C. Balram

Published Mar 30, 2020• 21 citations
arXivHTMLPDF

Abstract

Finding the right material platform for engineering efficient photonic interfaces to solid state emitters has been a long-standing bottleneck for scaling up solid state quantum systems. In this work, we demonstrate that nitrogen rich silicon nitride, with its low auto-fluorescence at visible wavelengths, is a viable quantum photonics platform by showing that nitrogen vacancy centers embedded in nanodiamonds preserve both their quantum optical and spin properties post-encapsulation. Given the variety of high-performance photonic components already demonstrated in silicon nitride, our work opens up a promising avenue for building integrated photonic platforms using solid state emitters.

DOI
10.1063/5.0002709

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Finding the right material platform for engineering efficient photonic interfaces to solid state emitters has been a long-standing bottleneck for scaling up solid state quantum systems. In this work, we demonstrate that nitrogen rich silicon nitride, with its low auto-fluorescence at visible wavelengths, is a viable quantum photonics platform by showing that nitrogen vacancy centers embedded in nanodiamonds preserve both their quantum optical and spin properties post-encapsulation. Given the variety of high-performance photonic components already demonstrated in silicon nitride, our work opens up a promising avenue for building integrated photonic platforms using solid state emitters.
Single-photon sources are essential for quantum technologies, supporting secure communication, quantum computing, and integrated photonic systems. Nitrogen-vacancy (NV) centers in nanodiamonds are robust emitters that operate at room temperature and can be positioned on-chip, but efficient coupling to photonic modes remains challenging. We present the design, fabrication, and experimental characterization of a silicon nitride photonic structure engineered to enhance and extract emission from NV centers. The device features a subwavelength gap between waveguides, a Bragg reflector for emission redirection, and an output waveguide for collection. Simulations guided the optimization of the geometry to increase the spontaneous emission rate through photonic confinement. Nanodiamonds were deposited into the gap using lithographic patterning and drop-casting. Fluorescence lifetime measurements confirm that the structure modifies the emission dynamics of the NV centers. The approach is compatible with scalable fabrication techniques and offers a practical route toward integrated, chip-based single-photon sources.
Nitrogen-vacancy (NV) centres in diamond show great promise for quantum computing, where photonic entanglement can be generated using long-lived optically-active spins [1]. A quantum processor would require a large number of interconnected NV centres, and an integrated platform becomes necessary for control and routing. Benefits of integration include nanophotonic cavities with ultra-small mode volumes [2], multilayer electronics, and use of existing integrated quantum photonic components and architectures. Pick-and-place methods have been adopted to combine diamond microchiplets with aluminium nitride [3]. Photonic and spin properties has also been measured in nanodiamond encapsulated in optimised silicon nitride (SiNx) [4]. However, challenges remain to interface diamond with photonics in a scalable and manufacturable process. In particular, the need to identify and manipulate stochastically located emitters requires precise and time-intensive confocal microscopy.
Single photons enable the distribution of quantum information over large distances and thus play a major role in quantum technologies such as communication and computing. Solid-state emitters are practical and efficient sources of single photons that can be manufactured in large numbers. When combined with a spin, the resulting spin-photon interfaces can store quantum states for extended periods and serve as the basis for quantum networks and repeaters. Among the many host materials explored over the past few decades, silicon stands out for its advanced nanofabrication, the maturity of its integrated photonics and microelectronics, and its high isotopic purity, which leads to exceptionally long spin coherence. These properties position silicon single-photon emitters and spin-photon interfaces among the most promising hardware platforms for implementing quantum networks and distributed quantum information processors. This review summarizes the current state of the art and open challenges towards coherent single-photon sources and scalable spin-photon interfaces based on color centers and erbium dopants in nanophotonic silicon structures.
Abstract One important building block for future integrated nanophotonic devices is the scalable on-chip interfacing of single photon emitters and quantum memories with single optical modes. Here we present the deterministic integration of a single solid-state qubit, the nitrogen-vacancy (NV) center, with a photonic platform consisting exclusively of SiO2 grown thermally on a Si substrate. The platform stands out by its ultra-low fluorescence and the ability to produce various passive structures such as high-Q microresonators and mode-size converters. By numerical analysis an optimal structure for the efficient coupling of a dipole emitter to the guided mode could be determined. Experimentally, the integration of a preselected NV emitter was performed with an atomic force microscope and the on-chip excitation of the quantum emitter as well as the coupling of single photons to the guided mode of the integrated structure could be demonstrated. Our approach shows the potential of this platform as a robust nanoscale interface of on-chip photonic structures with solid-state qubits.