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arXiv:1811.04954 · Physical review. B./Physical review. B

Evidence for mixed phases and percolation at the metal-insulator transition in two dimensions

Shiqi Li, Qing Zhang, Pouyan Ghaemi, Myriam P. Sarachik

Published Apr 8, 2019• 12 citations
arXivHTMLPDF

Abstract

The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakable kink at a well-defined electron density, ${n}_{k}$. The kink at ${n}_{k}$ is near, but not at the critical density ${n}_{c}$ determined from resistivity measurements, and the density at which ${n}_{k}$ occurs varies with temperature. These features are inconsistent with expectations for a quantum phase transition. We suggest instead that this is a percolation transition and present a detailed model based on the formation of a mixed insulating and metallic phase within which a metal-insulator transition takes place by percolation.

DOI
10.1103/physrevb.99.155302

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The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakable kink at a well-defined electron density, nk{n}_{k}nk​. The kink at nk{n}_{k}nk​ is near, but not at the critical density nc{n}_{c}nc​ determined from resistivity measurements, and the density at which nk{n}_{k}nk​ occurs varies with temperature. These features are inconsistent with expectations for a quantum phase transition. We suggest instead that this is a percolation transition and present a detailed model based on the formation of a mixed insulating and metallic phase within which a metal-insulator transition takes place by percolation.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
The resistivities of the dilute, strongly interacting two-dimensional electron systems in the insulating phase of a silicon MOSFET are the same for unpolarized electrons in the absence of magnetic field and for electrons that are fully spin polarized by the presence of an in-plane magnetic field. In both cases the resistivity obeys Efros-Shklovskii variable range hopping $\ensuremath{\rho}(T)={\ensuremath{\rho}}_{0}\text{exp}[{({T}_{ES}/T)}^{1/2}]$, with TES{T}_{ES}TES​ and $1/{\ensuremath{\rho}}_{0}$ mapping onto each other if one applies a shift of the critical density nc{n}_{\text{c}}nc​ reported earlier. With and without magnetic field, the parameters TES{T}_{ES}TES​ and $1/{\ensuremath{\rho}}_{0}={\ensuremath{\sigma}}_{0}$ exhibit scaling consistent with critical behavior approaching a metal-insulator transition.
We report thermodynamic magnetization measurements of two-dimensional electrons in several high-mobility Si metal-oxide-semiconductor field-effect transistors. We provide evidence for an easily polarizable electron state in a wide density range from insulating to deep into the metallic phase. The temperature and magnetic field dependence of the magnetization is consistent with the formation of large-spin droplets in the insulating phase. These droplets melt in the metallic phase with increasing density and temperature, though they survive up to large densities.
The quantum phase transition observed experimentally in two-dimensional (2D) electron systems has been a subject of theoretical and experimental studies for almost 30 years. We suggest Gaussian approximation to the mean-field theory of the second-order phase transition to explain the experimental data. Our approach explains self-consistently the universal value of the critical exponent 3/2 (found after scaling measured resistivities on both sides of the transition as a function of temperature) as the result of the divergence of the correlation length when the electron density approaches the critical value. We also provide numerical evidence for the stretched exponential temperature dependence of the metallic phase's resistivities in a wide range of temperatures and show that it leads to correct qualitative results. Finally, we interpret the phase diagram on the density-temperature plane exhibiting the quantum critical point, quantum critical trajectory and two crossover lines. Our research presents a theoretical description of the seminal experimental results.
The metal–insulator transition (MIT) observed in a two-dimensional dilute electron liquid raises the question about the applicability of the scaling theory of disordered electrons, the approach pioneered by Phil Anderson and his collaborators,8 for the description of this transition. In this context, we review here the scaling theory of disordered electrons with electron–electron interactions. We start with the disordered Fermi liquid, and show how to adjust the microscopic Fermi-liquid theory to the presence of disorder. Then we describe the non-linear sigma model (NLSM) with interactions. This model has a direct relation with the disordered Fermi liquid, but can be more generally applicable, since it is a minimal model for disordered interacting electrons. The discussion is mostly about the general structure of the theory emphasizing the connection of the scaling parameters entering the NLSM with conservation laws. Next, we show that the MIT, as described by the NLSM with interactions, is a quantum phase transition and identify the parameters needed for the description of the kinetics and thermodynamics of the interacting liquid in the critical region of the transition. Finally, we discuss the MIT observed in Si -MOSFETs. We consider it as an example of the Anderson transition in the presence of the electron interactions. We demonstrate that the two-parameter RG equations, which treat disorder in the one-loop approximation but incorporate the full dependence on the interaction amplitudes, describe accurately the experimental data in Si -MOSFETs including the observed non-monotonic behavior of the resistance and its strong drop at low temperatures. The fact that this drop can be reproduced theoretically, together with the argument that Anderson localization should occur at strong disorder, justified the existence of the MIT within the scaling theory.