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arXiv:1809.00292 · Journal of Physics Condensed Matter

How pump–probe differential reflectivity at negative delay yields the perturbed-free-induction-decay: theory of the experiment and its verification

Richarj Mondal, Basabendra Roy, Bipul Pal, Bhavtosh Bansal

Published Nov 1, 2018• 5 citations
arXivHTMLPDF

Abstract

We present a simple but mathematically complete first-principles theory for the pump-probe differential reflectivity experiment at negative delay (probe preceding the pump) to show how it gives information about the perturbed-free-induction-decay of coherent polarization. The calculation, involving the optical Bloch equations to describe the induced polarization and the Ewald-Oseen idea to calculate the reflected signal as a consequence of the free oscillations of perturbed dipoles, also explicitly includes the process of lock-in detection of a double-chopped signal after it has passed through a monochromator. The theory giving a closed form expression for the measured signal in both time and spectal domains is compared with experiments on high quality GaAs quantum well sample. The dephasing time inferred experimentally at 4 K compares remarkably well with the inverse of the absorption linewidth of the continuous-wave photoluminescence excitation spectrum. Spectrally-resolved signal at negative delay calculated from our theoretical expression nicely reproduces the coherent spectral oscillations observed in our experiments, although exact fitting of the experimental spectra with the theoretical expression is difficult on account of multiple resonances.

DOI
10.1088/1361-648x/aaed79

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We present a simple but mathematically complete first-principles theory for the pump-probe differential reflectivity experiment at negative delay (probe preceding the pump) to show how it gives information about the perturbed-free-induction-decay of coherent polarization. The calculation, involving the optical Bloch equations to describe the induced polarization and the Ewald-Oseen idea to calculate the reflected signal as a consequence of the free oscillations of perturbed dipoles, also explicitly includes the process of lock-in detection of a double-chopped signal after it has passed through a monochromator. The theory giving a closed form expression for the measured signal in both time and spectal domains is compared with experiments on high quality GaAs quantum well sample. The dephasing time inferred experimentally at 4 K compares remarkably well with the inverse of the absorption linewidth of the continuous-wave photoluminescence excitation spectrum. Spectrally-resolved signal at negative delay calculated from our theoretical expression nicely reproduces the coherent spectral oscillations observed in our experiments, although exact fitting of the experimental spectra with the theoretical expression is difficult on account of multiple resonances.
We perform femtosecond spectrally resolved pump-probe differential reflectivity measurements on excitons in GaAs quantum wells in both coherent and incoherent regimes. The spectral signal is nonzero and oscillatory at $\ensuremath{-}\mathrm{ve}$ delay up to a few ps indicating persistent coherence between excitonic polarization induced by the probe pulse and the delayed pump pulse. The signal for small +ve+ve+ve and $\ensuremath{-}\mathrm{ve}$ delay $(\ensuremath{\tau})$ shows modulation caused by quantum beats due to coexcitation of heavy and light hole excitons. The rise of the signal with $\ensuremath{\tau}$ for $\ensuremath{\tau}<0$ is rather nonexponential and is sensitive to detuning of the detection energy with respect to the exciton energy. The signal decay with $\ensuremath{\tau}$ for small +ve+ve+ve $\ensuremath{\tau}$ shows dependence on pump-probe relative polarization. The excitonic reflectivity shows a large reduction caused by excitonic absorption saturation for both +ve+ve+ve and $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}$ when the pump pulse intensity is increased to large values. To compare the experimental results with theory, we obtain an expression for the PPDR signal in terms of the third order excitonic polarization. This has an additional term not considered earlier to describe pump-probe experiments. The calculations are performed using optical Bloch equations, modified to incorporate exciton inhomogeneous broadening, quantum beats, and many body effects such as local field, excitation induced energy shift, and dephasing. These effects are found essential in explaining the observed PPDR spectral data. The delay dependence of the signal near the exciton energy is mainly controlled by inhomogeneous broadening for $\ensuremath{-}\mathrm{ve}$ $\ensuremath{\tau}.$ The signal decay for large +ve+ve+ve $\ensuremath{\tau}$ has an exponential behavior determined by the lifetime of incoherent excitons. Experiments for collinear polarization reveal an additional exponential component for small +ve+ve+ve delay. Theoretically, this is found to be related to exciton dephasing and is present only when many body effects are included.
The nonlinear response of single GaAs quantum dots is studied in femtosecond near-field pump-probe experiments. At negative time delays, transient reflectivity spectra show pronounced oscillatory structure around the quantum dot exciton line, providing the first evidence for a perturbed free induction decay of the excitonic polarization. Phase-disturbing Coulomb interactions between the excitonic polarization and continuum excitations dominate the optical nonlinearity on ultrafast time scales. A theoretical analysis based on the semiconductor Bloch equations accounts for this behavior.
Using laser pulses of duration comparable to semiconductor relaxation and dephasing times, the coherent phenomena common to two-level systems have been demonstrated in II-VI and III-V semiconductors. These light-matter interactions are characterized by electrons and holes in their initially excited states and/or a macroscopic polarization that persists after the excitation. A nonthermal carrier distribution was observed in bulk CdSe, demonstrating the extremely fast energy relaxation possible when carrier-LO-phonon scattering is included. Quantum-confined CdSe microcrystallites were then employed to limit the available decay avenues. The one and two-pair transitions were characterized, and using spectral hole-burning, energy relaxation was shown to be substantially slower than in bulk. Dipole dephasing remained very rapid. Persistent macroscopic polarization was demonstrated in semiconductors through pump and probe experiments conducted on time scales faster than the inverse linewidth of the exciton. In the first set of experiments, it was found that the exciton optical Stark shift deviates from that predicted by a steady-state theory. The shift is smaller than expected and lasts longer than the pump pulse. Both effects are explained by free evolution of the exciton's polarization. Transient exciton bleaching is observed and shown to be a result of adiabatic following. In a second study of coherent polarization, spectral oscillations at negative delay times were studied. Oscillations were measured in a wide variety of semiconductors, temporally preceding several different pump-probe phenomena. By comparison with a semiclassical theory, it was shown that spectral oscillations in the spectral region of the exciton are evidence of persistent exciton polarization. Oscillations in the band are due to four wave mixing of the pump and probe beams.
Transient pump-probe signals of a GaAs/Alx{\mathrm{Al}}_{\mathrm{x}}Alx​${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As quantum well are investigated both theoretically and experimentally for different excitation conditions. The calculations are based on a microscopic density-matrix approach taking higher-order correlations into account. We present spectrally resolved transients which provide insights into the nature of the differential transmission change. Especially the complex phase signature of heavy-hole--light-hole quantum beats in dependence of the detection energy allows for an identification of different microscopic processes in the pump-probe signal. The theoretical results are verified experimentally by comparison with the coherent and incoherent parts of the time-resolved data. We find a dominant role of the Coulomb-induced correlations up to the ${\mathrm{\ensuremath{\chi}}}^{(3)}$ relevant four-point level in the coherent signature in comparison to the Pauli blocking contributions.
The theoretical formulation for pump-probe spectroscopic analysis of free induction decay has been made using semiclassical time dependent perturbation technique in GaAs/AlxGa1-xAs quantum well structure. The pump pulse is considered to be tuned below the band edge and the excitation intensity is assumed to be in the moderate power regime so that the only many-body effect that dominates is the excitonic effect. The probe transmission spectrum features the characteristic resonance frequencies of the system concerned. The temporal nature of the transmitted probe signal is also found to characterize the ultrafast free induction decay of the pump induced polarization, which is recorded by the low intensity probe transmission in the system.
Excitons, the bound states of an electron and a hole, in semiconductors are interesting objects and they continue to attract attention of researchers from all over the world. Despite intense research on exciton physics over last three-four decades, many interesting phenomena related to the dynamics and the nonlinear optical properties of excitons in semiconductors and their nanostructures in the coherent and incoherent regimes are still to be explored. This thesis presents our effort to study the nonlinear optical properties as well as the exciton dynamics in coherent and incoherent regime in semiconductor nanostructures including GaAs quantum wells (QWs) and InAs quantum dots (QDs). We have set up several time-resolved and steady-state optical spectroscopic measurement techniques in our laboratory to carry out our study on excitons dynamics in semiconductor QWs and QDs. We work out a clear and detailed theory of the pump-probe signal taking account of all aspect of the measurement, namely, the lock-in detection, spectral selection by the monochromator and time-integration at the slow photodetector. We have used the formalism of optical Bloch equations conventionally used to analyse wave mixing experiments. Our analysis puts the pump-probe technique on the same footing as the wave mixing experiments. We show that pumpprobe experiments can be used to study both coherent and incoherent dynamics. We also present a clear physical picture of the measured signal using the Lorentz harmonic oscillator model. We report the investigation of the coherent exciton dephasing dynamics using pumpprobe reflectivity measurement in GaAs QWs for resonant excitation. Two GaAs/AlGaAs QWs with well thicknesses 8 nm and 17.5 nm are used. We found a strong dependence of the dephasing rate of the excitons with increasing exciton density due to exciton-exciton scattering. We found that the exciton dephasing rate of 8 nm QWs at low excitation density and at low lattice temperature is larger than the corresponding dephasing rate of the 17.5 nm QWs, possibly due to larger effect of inhomogeneous broadening. We also report that the dephasing rates for both QWs are linear with the sample temperature below the 30 K. We report the study of ionization equilibrium between the exciton and the electronhole plasma population in the temperature and pressure (excitation density) phase space. Non-resonant excitation of semiconductor creates a nonequilibrium state of electron-hole plasma. We investigate this ionization equilibrium using steady state photoluminescence and time-resolved excitation correlation PL measurements. We present a clear phase diagram (in temperature and carrier density phase space) of this ionization process.A clear density-dependent increase in the ionization ratio is observed and its connection with the Mott transition is discussed. Semiconductor nanocrystals and QDs are another important area of research, mainly due to their huge potential for device application. We present a simple model which combines carrier loss kinetics, detailed balance principle in thermodynamic equilibrium and Pauli exclusion principle to quantitatively explain the observed behaviour of the experimental data.