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arXiv:1802.08758 · Nano Letters

Frequency Control of Single Quantum Emitters in Integrated Photonic Circuits

Emma Schmidgall, Srivatsa Chakravarthi, Michael Gould, Ian Christen, Karine Hestroffer, Fariba Hatami, Kai‐Mei C. Fu

Published Jan 30, 2018• 41 citations
arXivHTMLPDF

Abstract

Generating entangled graph states of qubits requires high entanglement rates with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.

DOI
10.1021/acs.nanolett.7b04717

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Generating entangled graph states of qubits requires high entanglement rates with efficient detection of multiple indistinguishable photons from separate qubits. Integrating defect-based qubits into photonic devices results in an enhanced photon collection efficiency, however, typically at the cost of a reduced defect emission energy homogeneity. Here, we demonstrate that the reduction in defect homogeneity in an integrated device can be partially offset by electric field tuning. Using photonic device-coupled implanted nitrogen vacancy (NV) centers in a GaP-on-diamond platform, we demonstrate large field-dependent tuning ranges and partial stabilization of defect emission energies. These results address some of the challenges of chip-scale entanglement generation.
For quantum information applications, nitrogen-vacancy (NV) centers in diamond combine many of the advantages of atomic systems (optical access, millisecond spin-coherence times) with the engineering flexibility of solid-state devices. Recent demonstrations of coherent coupling between photons and individual NV-center spins [1,2] provide a route to integrating NV-center qubits within photonic networks and for on-demand generation of entangled single-spin/single-photon pairs. Such applications require the ability to tune the NV-center zero-phonon optical transitions, to compensate for natural sample inhomogeneities which perturb the electronic orbital states. Here we demonstrate the ability to electrically control the orbitals of individual NV centers by applying voltages to micron-scale surface gates [3]. Surprisingly, the local electric field experienced by an NV center is significantly enhanced by a photoinduced space charge resulting from photoionization of deep donor impurities within the diamond, even in high-purity single-crystal material (< 5 ppb nitrogen content). Since the photoinduced electric fields are reproducible as a function of gate voltage and are predominantly directed perpendicular to the diamond surface, we can harness them to obtain three-dimensional control of the local electric field vector with surface gates alone. To demonstrate this technique, we tune the excited-state orbital doublet of a strained NV center to degeneracy, as required for some spin-photon entanglement protocols [2], and then adjust the optical transition frequency, showing that we can tune multiple NV centers to have the same degenerate transition energy. This method should enable the coherent coupling of multiple NV center spins to indistinguishable photons within a scalable photonic network.
Solid state quantum emitters are a leading platform for photonic quantum networking with memory nodes. However, the inhomogeneous distribution of quantum emitters, as well as several environmental factors (i.e. strain and electric fields) spread the frequency spectrum of the qubits, making them distinguishable and therefore not a reliable resource for distributed quantum entanglement. In this paper, we demonstrate a full-stack approach to integrating nearly indistinguishable tin vacancy (SnV−^-−) quantum emitters on a frequency-tunable photonic interposer that overcomes the native distribution and static variation of quantum emitters for an indistinguishable photonic quantum networking platform. We demonstrate a silicon nitride-on-insulator photonic integrated circuit (PIC) with accompanying multiphysics digital twin (MPhDT) that guides discovery of SnV−^-− strain-tuning parameters and informs construction of a multi-channel quantum repeater node. On this node, we achieve the first simultaneous demonstration of spectral tuning of the zero phonon line (ZPL) at GHz scale; coherent electron spin control with gate times of <80<80<80 ns; strongly- and weakly-coupled nuclear spin detection; and commercial fiber array-coupled readout of a SnV−^-− center. Finally, we propose and simulate improvements to the architecture that achieve 99.96% connectivity of $ N \sim 1000$ emitters spanning the inhomogeneous distribution of SnV−^-− centers in strained diamond, where distributed quantum entanglement may be realized.
Efficient interfaces between optical photons and quantum bits are fundamental building blocks for quantum networks and large-scale quantum computers. We demonstrate an integrated platform for scalable quantum optics based on color centers coupled to diamond nanodevices. First, we incorporate nitrogen-vacancy (NV) centers in diamond into hybrid nanophotonic crystal cavities. Despite our progress towards coupling the NV to cavity photons, we find that the NV-cavity interface is limited by the imperfections of the color center's properties and its local environment. We approach this challenge first by characterizing and modifying the diamond surface to reduce the environmental noise affecting the NV optical transition. Subsequently, we develop a new approach that makes use of a quantum emitter with intrinsic protection from this noise: the silicon-vacancy (SiV) center in diamond. We demonstrate that SiV centers introduced through ion implantation feature highly coherent optical transitions, even inside nanostructures. By placing SiV centers inside all-diamond photonic crystal cavities, we achieve strong SiV-photon coupling with a cooperativity of greater than 20. Using this platform, we realize a quantum-optical switch controlled by the spin degree of freedom of a single SiV. By measuring intensity correlations of indistinguishable Raman photons emitted into a single waveguide, we observe a quantum interference effect resulting from the superradiant emission of two probabilistically entangled SiV centers. Finally, we demonstrate controllable photon-mediated interactions between the spin degrees of freedom of two cavity-coupled SiV centers. When the optical transitions of the two SiV centers are tuned into resonance, the coupling of each SiV to the common cavity mode results in a coherent interaction between the two SiVs, leading to the observation of super- and sub-radiant two-SiV states.
Chip integration of quantum emitters is a crucial milestone for scalable quantum photonic information processing. Among optically active defect centers for quantum photonics, diamond color centers are promising because of their long spin coherence times and high photon emission rates. However, for a coherent-photon emission, they typically require a cryogenic environment to protect optical coherence from thermal phonons, which makes chip integration challenging. In this paper, we develop a chip-integrated diamond photonic crystal cavity embedding an ensemble of nitrogen-vacancy (NV) centers. We confirm cryogenic operation by observing Purcell enhancement of NV-center emission via an edge-coupled optical fiber. This result demonstrates successful integration of diamond color centers, a photonic crystal cavity, and an optical waveguide-fiber package, representing a key step toward scalable diamond-based quantum communication platforms.
Solid-state spin-photon interfaces promise to scale quantum networks through on-chip photonic integration and multiplexed entanglement generation. To date, remote entanglement between integrated emitters has been realized only in cavity-enhanced systems, where fabrication yield and spectral matching remain major obstacles. Here we demonstrate heralded remote entanglement between diamond tin-vacancy spin qubits embedded in separate on-chip waveguides. Combining intrinsically efficient photon emission with a broadband waveguide architecture provides high device yield and obviates the need for spectral matching to cavity modes. We realize coherent optical and spin control and achieve high-visibility two-photon interference. By combining photon-mediated entanglement generation with real-time feedforward, we produce a consistent entangled state independent of the heralding pattern. These results establish waveguide-integrated tin-vacancy centers as a compelling platform for scalable quantum network nodes.