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arXiv:1802.01327 · Physical review. B./Physical review. B

Voltage-controlled superconducting quantum bus

Lucas Casparis, Natalie Pearson, Anders Kringhøj, T. W. Larsen, Ferdinand Kuemmeth, Jesper Nygård, Peter Krogstrup, Karl D. Petersson, Charles M. Marcus

Published Feb 21, 2019• 49 citations
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Abstract

We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus. Using a gate voltage to control the superconducting switch yields up to a factor of 8 change in qubit-qubit coupling between the on and off states without detrimental effect on qubit coherence. High-bandwidth operation of the coupling switch on nanosecond time scales degrades qubit coherence.

DOI
10.1103/physrevb.99.085434

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We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus. Using a gate voltage to control the superconducting switch yields up to a factor of 8 change in qubit-qubit coupling between the on and off states without detrimental effect on qubit coherence. High-bandwidth operation of the coupling switch on nanosecond time scales degrades qubit coherence.
We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic of semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors below 0.7% for all gates, including voltage-controlled Z rotations. We show coherent capacitive coupling between two gatemons and coherent swap operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of 91%, demonstrating the potential of gatemon qubits for building scalable quantum processors.
Qubits on solid state devices could potentially provide the rapid control necessary for developing scalable quantum information processors. Materials innovation and design breakthroughs have increased functionality and coherence of qubits substantially over the past two decades. Here, we show by improving interface between InAs as a semiconductor and Al as a superconductor, one can reliably fabricate voltage-controlled Josephson junction field effect transistor (JJ-FET) that can be used as tunable qubits, resonators, and coupler switches. We find that bandgap engineering is crucial in realizing a two-dimensional electron gas near the surface. In addition, we show how the coupling between the semiconductor layer and the superconducting contacts can affect qubit properties. We present the anharmonicity and coupling strengths from one and two-photon absorption in a quantum two level system fabricated with a JJ-FET.
Coherent operation of gate-voltage-controlled hybrid transmon qubits (gatemons) based on semiconductor nanowires was recently demonstrated. Here we experimentally investigate the anharmonicity in epitaxial InAs-Al Josephson junctions, a key parameter for their use as a qubit. Anharmonicity is found to be reduced by roughly a factor of 2 compared to conventional metallic junctions and dependent on gate voltage. Experimental results are consistent with a theoretical model, indicating that Josephson coupling is mediated by a small number of highly transmitting modes in the semiconductor junction.
We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time T 1 ∼ 0.56 μs and the dephasing time T 2 * ∼ 0.38 μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
Abstract We demonstrate that superconducting gatemon qubits based on superconductor-semiconductor-superconductor Josephson junctions can be constructed on hole-type Ge/Si core/shell nanowires. The frequency of the qubit can be set firstly by controlling the diffusion of Al in the nanowire via thermal annealing, which yields a roughly suitable critical supercurrent for the junction, and then by fine tuning of a gate voltage, by which an accurate adjustment of the frequency can be realized. On the resulted qubit, Rabi oscillation with an energy relaxation time T1~180 ns was observed in the time domain, and the gate voltage dependence of both T1 and the dephasing time T2 was investigated. Such a hole-type superconducting gatemon qubit, based on materials with strong spin-orbit coupling and the absence of hyperfine interaction, could be used for exploring the quantum coherence phenomena of hole-gas and potentially also Majorana physics in Ge-based quantum devices.