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arXiv:1503.08339 · Physical Review Letters

Semiconductor-Nanowire-Based Superconducting Qubit

T. W. Larsen, Karl D. Petersson, Ferdinand Kuemmeth, Thomas Sand Jespersen, Peter Krogstrup, Jesper Nygård, Charles M. Marcus

Published Sep 14, 2015• 419 citations
arXivHTMLPDF

Abstract

We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.

DOI
10.1103/physrevlett.115.127001

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We introduce a hybrid qubit based on a semiconductor nanowire with an epitaxially grown superconductor layer. Josephson energy of the transmonlike device ("gatemon") is controlled by an electrostatic gate that depletes carriers in a semiconducting weak link region. Strong coupling to an on-chip microwave cavity and coherent qubit control via gate voltage pulses is demonstrated, yielding reasonably long relaxation times (~0.8 μs) and dephasing times (~1 μs), exceeding gate operation times by 2 orders of magnitude, in these first-generation devices. Because qubit control relies on voltages rather than fluxes, dissipation in resistive control lines is reduced, screening reduces cross talk, and the absence of flux control allows operation in a magnetic field, relevant for topological quantum information.
We study a gate-tunable superconducting qubit (gatemon) based on a thin InAs-Al hybrid nanowire. Using a gate voltage to control its Josephson energy, the gatemon can reach the strong coupling regime to a microwave cavity. In the dispersive regime, we extract the energy relaxation time T 1 ∼ 0.56 μs and the dephasing time T 2 * ∼ 0.38 μs. Since thin InAs-Al nanowires can have fewer or single sub-band occupation and recent transport experiment shows the existence of nearly quantized zero-bias conductance peaks, our result holds relevancy for detecting Majorana zero modes in thin InAs-Al nanowires using circuit quantum electrodynamics.
The technology of quantum computing is believed to solve certain computational problems significantly faster than classical computers, enabling classically inaccessible problems. However, the technology is still in its infancy and it is still too early to conclude which physical system(s) will form the basis of tomorrow's quantum computer. Small-scale quantum processors, built on the superconducting transmon qubit, demonstrated already the anticipated quantum speed-up. Despite this tremendous milestone, scaling up to a full-fledged quantum computer is far from trivial: with these qubits, the flux-control causes crosstalk between qubits and heating, the room-temperature microwave control is hardly scalable and comes with high energetic radiation, and most importantly, the loss of quantum information in time leads to computational errors. Recent advances in various hybrid semiconductor materials enabled novel voltage-controlled transmons, gatemons, which are less susceptible to heating and crosstalk. Even more exciting, gatemons can be designed to host Majorana zero modes in a way that renders the qubit inherently protected against decoherence. In order to induce Majorana zero modes in such nanowire systems strong magnetic fields are required. Problematically, magnetic fields destroy the superconductivity that these microwave circuits rely on. In this thesis we integrate three types of hybrid Josephson junctions in magnetic field compatible microwave devices. Chapter 4 demonstrates the first graphene-based transmon. Due to the mono-atomic thickness of graphene in combination with magnetic field resilient coplanar waveguide resonators, we are able to operate the transmon circuit at an in-plane magnetic field of 1 Tesla. Chapter 5 embeds an InAs-Al semiconducting nanowire Josephson junction in a high quality factor superconducting transmission line resonator, demonstrating on-chip microwave generation. The gate-controllable semiconducting platform lends itself for fast pulse control, providing a perspective for the coherent on-chip manipulation of artificial two-level systems, in particular superconducting qubits such as transmons. Chapter 6 continues the development of InAs-Al nanowire transmons. The offset-charge-sensitive regime, additional plunger gates and magnetic field compatibility prepares the platform for the detection of coherent coupling between Majorana zero modes, a phenomena which unfortunately still remains unobserved. Additionally, we realise the first InSb-Al gatemon. The higher spin-orbit coupling makes InSb to be a preferred material in the search for Majorana signatures. Chapter 7 reports on the dynamics of quasiparticle tunneling events in real-time across the InAs-Al nanowire junction in a transmon architecture. The magnetic field compatibility of our device up to 1 Tesla together with in-situ voltage-controlled quasiparticle trap engineering, allows us to measure the survival of the charge-parity lifetime up to strong magnetic fields. A result which is extremely important in the research field of topological quantum computing, where the qubit space is defined in the charge-parity.
We demonstrate the ability of an epitaxial semiconductor-superconductor nanowire to serve as a field-effect switch to tune a superconducting cavity. Two superconducting gatemon qubits are coupled to the cavity, which acts as a quantum bus. Using a gate voltage to control the superconducting switch yields up to a factor of 8 change in qubit-qubit coupling between the on and off states without detrimental effect on qubit coherence. High-bandwidth operation of the coupling switch on nanosecond time scales degrades qubit coherence.
Recent experiments have demonstrated superconducting transmon qubits with semiconductor nanowire Josephson junctions. These hybrid gatemon qubits utilize field effect tunability characteristic of semiconductors to allow complete qubit control using gate voltages, potentially a technological advantage over conventional flux-controlled transmons. Here, we present experiments with a two-qubit gatemon circuit. We characterize qubit coherence and stability and use randomized benchmarking to demonstrate single-qubit gate errors below 0.7% for all gates, including voltage-controlled Z rotations. We show coherent capacitive coupling between two gatemons and coherent swap operations. Finally, we perform a two-qubit controlled-phase gate with an estimated fidelity of 91%, demonstrating the potential of gatemon qubits for building scalable quantum processors.
We present a gate-voltage-tunable transmon qubit (gatemon) based on planar InAs\mathrm{In}\mathrm{As}InAs nanowires that are selectively grown on a high-resistivity silicon substrate using III-V buffer layers. We show that low-loss superconducting resonators with an internal quality of $2\ifmmode\times\else\texttimes\fi{}{10}^{5}$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, ${T}_{1}\ensuremath{\approx}700\phantom{\rule{0.2em}{0ex}}\mathrm{ns}$, and dephasing times, ${T}_{2}^{\ensuremath{\ast}}\ensuremath{\approx}20\phantom{\rule{0.2em}{0ex}}\mathrm{ns}$ and ${T}_{2,\mathrm{echo}}\ensuremath{\approx}1.3\phantom{\rule{0.2em}{0ex}}\ensuremath{\mu}\mathrm{s}$. Further, we infer a high junction transparency of 0.40.40.4--0.90.90.9 from an analysis of the qubit anharmonicity.
Superconducting transmon qubits based on hybrid superconductor-semiconductor Josephson junctions (gatemons) offer gate tunability, but their relaxation times remain well below those of state-of-the-art transmons, and the origin of this discrepancy is not fully understood. Here, we co-fabricate gatemons and SIS-junction transmons with nominally identical circuit layouts, gate dielectrics, and control lines, so that the Josephson element is the only intentional distinction. Across multiple chips, transmons in this architecture reach relaxation times in the tens of microseconds, whereas gatemons saturate in the few-microsecond range. Using the transmons as on-chip references, we construct a loss budget including Purcell decay, spontaneous emission through the control line, and internal dielectric loss, and find that the corresponding T1 limits exceed all measured gatemon values by more than an order of magnitude. Temperature-dependent T1 measurements follow a common quasiparticle-activation model and yield similar superconducting gaps for S-Sm-S and SIS junctions, indicating that the reduced gatemon coherence is dominated by additional temperature-independent, junction-intrinsic dissipation.