Reduced density matrix functional theory for the case of solids is presented and an exchange-correlation functional based on a fractional power of the density matrix is introduced. We show that compared to other functionals, this produces more accurate behavior for total energies as a function of particle number for finite systems. Moreover, it captures the correct band-gap behavior for conventional semiconductors, as well as strongly correlated Mott insulators, where a gap is obtained in the absence of any magnetic ordering.
We study the Mott insulating phase of the one-dimensional Hubbard model using a local-density approximation (LDA) that is based on the Bethe Ansatz (BA).Unlike conventional functionals, the BA-LDA has an explicit derivative discontinuity.We demonstrate that, as a consequence of this discontinuity, the BA-LDA yields the correct Mott gap, independently of the strength of the correlations.A convenient analytical formula for the Mott gap in the thermodynamic limit is also derived.We find that in one-dimensional quantum systems the contribution of the discontinuity to the full gap is more important than that of the band-structure gap, and discuss some consequences this finding has for electronic-structure calculations.
Density-Functional Theory (DFT), although widely used and very successful in the calculation of several observables, fails to correctly describe strongly correlated materials. In the first part of this work we, therefore, introduce reduced-density-matrix-functional theory (RDMFT) which is one possible way to treat electron correlation beyond DFT. Within this theory the one-body reduced density matrix (1-RDM) is used as the basic variable. Our main interest is the calculation of the fundamental gap which proves very problematic within DFT. In order to calculate the fundamental gap we generalize RDMFT to fractional particle numbers M by describing the system as an ensemble of an N and an N+1 particle system (with N≤ M≤N+1). For each fixed particle number, M, the total energy is minimized with respect to the natural orbitals and their occupation numbers. This leads to the total energy as a function of M. The derivative of this function with respect to the particle number has a discontinuity at integer particle number which is identical to the gap. In addition, we investigate the necessary and sufficient conditions for the 1-RDM of a system with fractional particle number to be N-representable. Numerical results are presented for alkali atoms, small molecules, and periodic systems. Another problem within DFT is the description of non-relativistic many- electron systems in the presence of magnetic fields. It requires the paramagnetic current density and the spin magnetization to be used as basic variables besides the electron density. However, electron-gas-based functionals of current-spin-density-functional Theory (CSDFT) exhibit derivative discontinuities as a function of the magnetic field whenever a new Landau level is occupied, which makes them difficult to use in practice. Since the appearance of Landau levels is, intrinsically, an orbital effect it is appealing to use orbital-dependent functionals. We have developed a CSDFT version of the optimized effective potential (OEP) method which allows for the use of explicitly orbital-dependent functionals in the context of CSDFT. We present the derivation of corresponding equations and show results for a quantum dot in external magnetic fields in the second part of this thesis.
Within the framework of zero-temperature Fock-space density-functional theory (DFT), we prove that the G\^ateaux functional derivative of the universal density functional, ${\ensuremath{\delta}{F}^{\ensuremath{\lambda}}[\ensuremath{\rho}]∕\ensuremath{\delta}\ensuremath{\rho}(\mathbit{r})\ensuremath{\mid}}_{\ensuremath{\rho}={\ensuremath{\rho}}_{0}}$, at ground-state densities with arbitrary normalizations $(⟨{\ensuremath{\rho}}_{0}(\mathbit{r})⟩=n∊{\mathcal{R}}_{+})$ and an electron-electron interaction strength $\ensuremath{\lambda}$, is uniquely defined, but is discontinuous when the number of electrons
n becomes an integer, thus providing a mathematically rigorous confirmation for the ``derivative discontinuity'' initially discovered by Perdew et al. [Phys. Rev. Lett. 49, 1691 (1982)]. However, the functional derivative of the exchange-correlation functional is continuous with respect to the number of electrons in Fock space; i.e., there is no ``derivative discontinuity'' for the exchange-correlation functional at an integer electron number. For a ground-state density ${\ensuremath{\rho}}_{0,n}^{v,\ensuremath{\lambda}}(\mathbit{r})$ of an external potential $v(\mathbit{r})$, we show that ${\ensuremath{\delta}{F}^{\ensuremath{\lambda}}[\ensuremath{\rho}]∕\ensuremath{\delta}\ensuremath{\rho}(\mathbit{r})\ensuremath{\mid}}_{\ensuremath{\rho}={\ensuremath{\rho}}_{0,n}^{v,\ensuremath{\lambda}}}={\ensuremath{\mu}}_{\mathrm{SM}}^{n}\ensuremath{-}v(\mathbit{r})$, where the constant ${\ensuremath{\mu}}_{\mathrm{SM}}^{n}$ is given by the following chain of dependences: ${\ensuremath{\rho}}_{0,n}^{v,\ensuremath{\lambda}}(\mathbit{r})\ensuremath{\mapsto}[v]\ensuremath{\mapsto}{E}_{0}^{v,\ensuremath{\lambda}}(n)\ensuremath{\mapsto}{\ensuremath{\mu}}_{\mathrm{SM}}^{n}={\ensuremath{\partial}{E}_{0}^{v,\ensuremath{\lambda}}(k)∕\ensuremath{\partial}k\ensuremath{\mid}}_{k=n}$. Here
[v] is the class of the external potential $v(\mathbit{r})$ up to a real constant, and ${\ensuremath{\mu}}_{\mathrm{SM}}^{n}$ is the chemical potential defined according to statistical mechanics. At an integer electron number
N, we find that there is no freedom of adding an arbitrary constant to the value of the chemical potential ${\ensuremath{\mu}}_{\mathrm{SM}}^{N}$, whose exact value is generally not the popular preference of the negative of Mulliken's electronegativity, $\ensuremath{-}\frac{1}{2}(I+A)$, where
I and
A are the first ionization potential and the first electron affinity, respectively. In addition, for any external potential converging to the same constant at infinity in all directions, we resolve that ${\ensuremath{\mu}}_{\mathrm{SM}}^{N}=\ensuremath{-}I$. Finally, the equality ${\ensuremath{\mu}}_{\mathrm{DFT}}={\ensuremath{\mu}}_{\mathrm{SM}}^{n}$ is rigorously derived via an alternative route, where ${\ensuremath{\mu}}_{\mathrm{DFT}}$ is the Lagrangian multiplier used to constrain the normalization of the density in the traditional DFT approach.
We present a novel method for calculating the fundamental gap. To this end, reduced-density-matrix-functional theory is generalized to fractional particle number. For each fixed particle number, M , the total energy is minimized with respect to the natural orbitals and their occupation numbers. This leads to a function, E tot M , whose derivative with respect to the particle number has a discontinuity identical to the gap. In contrast to density functional theory, the energy minimum is generally not a stationary point of the total-energy functional. Numerical results, presented for alkali atoms, the LiH molecule, the periodic one-dimensional LiH chain, and solid Ne, are in excellent agreement with CI calculations and/or experimental data.
We introduce a scheme through which the ground-state electronic density n and total energy Ev [n] of inhomogeneous interacting systems can be determined in a self-consistent (SC) way. It is based on a SC perturbation expansion for the single-particle Green function G. Our employed expansion is argued to be valid under all conditions provided that the ground-state charge density of the interacting system is pure-state non-interacting v representable. The formalism discussed in this paper has been applied to a quasi-one-dimensional periodic system. It has even been possible to carry out SC calculations with the dynamically screened exchange diagram (the so-called GW diagram, where W is the dynamically screened electron-electron interaction function) for the self-energy operator Σ. A coherent mode of interpretation of a number of our results entails that the overwhelming success of the GW framework in relatively accurately reproducing the experimental energy gaps of a number of semiconductors and insulators may be a direct consequence of non-self-consistency effects; whereas a non-self-consistent calculation in our tests increases the value of the local-density approximation (LDA) gap in the range of 40–65% of the ‘experimental’ gaps, self-consistency effects reduce this range to 14–17%. The same line of argument leads us to conclude that, in our model, 26–35% of the LDA error in the gap energies is due to the absence of a well known discontinuity in the LDA exchange-correlation potential, and the remaining part is due to the Kohn-Sham eigenvalues not being identifiable with one-particle excitation energies. A natural conclusion that may be drawn from these observations is that a correct description of excitation energies (e.g. of the gap energy) cannot be achieved without including, at least approximately, the vertex part of Σ, which is entirely absent in the GW scheme.