arXiv:1710.02499 · Physical review. B./Physical review. B
Optimal control of universal quantum gates in a double quantum dot
L. K. Castelano, Emanuel F. de Lima, Justino R. Madureira, Marcos H. Degani, M. Z. Maialle
Abstract
We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD) formed in a nanowire with longitudinal potential modulated by local gating. We develop a model that describes the process of loading and unloading the DQD taking into account the overlap between the electron wave function and the leads. Such a model considers the spatial occupation and the spin Pauli blockade in a time-dependent fashion due to the highly mixed states driven by the external electric field. Moreover, we present a road map based on the quantum optimal control theory (QOCT) to find a specific electric field that performs two-qubit quantum gates on a faster timescale and with higher possible fidelity. By employing the QOCT, we demonstrate the possibility of performing within high efficiency a universal set of quantum gates ${$cnot, H, and $\mathrm{T}}$, where cnot is the controlled-not gate, H is the Hadamard gate, and T is the $\ensuremath{\pi}/8$ gate, even in the presence of the loading/unloading process and charge noise effects. Furthermore, by varying the intensity of the applied magnetic field $B$, the optimized fidelity of the gates oscillates with a period inversely proportional to the gate operation time ${t}_{f}$. This behavior can be useful to attain higher fidelity for fast gate operations ($>1$ GHz) by appropriately choosing $B$ and ${t}_{f}$ to produce a maximum of the oscillation.