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arXiv:cond-mat/0605576 · Physical Review Letters

Universal Set of Quantum Gates for Double-Dot Spin Qubits with Fixed Interdot Coupling

Ronald Hanson, Guido Burkard

Published Jan 31, 2007• 123 citations
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Abstract

We propose a set of universal gate operations for the singlet-triplet qubit realized by two-electron spins in a double quantum dot, in the presence of a fixed inhomogeneous magnetic field. All gate operations are achieved by switching the potential offset between the two dots with an electrical bias, and do not require time-dependent control of the tunnel coupling between the dots. We analyze the two-electron dynamics and calculate the effective qubit rotation angle as a function of the applied electric bias. We present explicit gate sequences for single-qubit rotations about two orthogonal axes, and a CNOT gate sequence, completing the universal gate set.

DOI
10.1103/physrevlett.98.050502

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We propose a set of universal gate operations for the singlet-triplet qubit realized by two-electron spins in a double quantum dot, in the presence of a fixed inhomogeneous magnetic field. All gate operations are achieved by switching the potential offset between the two dots with an electrical bias, and do not require time-dependent control of the tunnel coupling between the dots. We analyze the two-electron dynamics and calculate the effective qubit rotation angle as a function of the applied electric bias. We present explicit gate sequences for single-qubit rotations about two orthogonal axes, and a CNOT gate sequence, completing the universal gate set.
We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for arbitrary rotations, and the two-qubit controlled NOT gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations.
A crucial requirement for quantum-information processing is the realization of multiple-qubit quantum gates. Here, we demonstrate an electron spin-based all-electrical two-qubit gate consisting of single-spin rotations and interdot spin exchange in a double quantum dot. A partially entangled output state is obtained by the application of the two-qubit gate to an initial, uncorrelated state. We find that the degree of entanglement is controllable by the exchange operation time. The approach represents a key step towards the realization of universal multiple-qubit gates.
We propose an optimized set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the $S\text{\ensuremath{-}}{T}_{\ensuremath{-}}$ subspace. Qubit rotations are driven by the applied magnetic field and a field gradient provided by a micromagnet. We optimize the fidelity of this qubit as a function of the magnetic fields, taking advantage of ``sweet spots'' where the rotation frequencies are independent of the energy level detuning, providing protection against charge noise. We simulate gate operations and qubit rotations in the presence of quasistatic noise from charge and nuclear spins as well as leakage to nonqubit states. Our results show that, for silicon quantum dots, gate fidelities greater than 9999%99 should be realizable, for rotations about two nearly orthogonal axes.
We propose an optimal set of quantum gates for a singlet-triplet qubit in a double quantum dot with two electrons utilizing the S-T− subspace. Qubit rotations are driven by the applied magnetic field and an orthogonal field gradient provided by a micromagnet. We optimize the fidelity of this qubit as a function of magnetic fields, taking advantage of “sweet spots” where the rotation frequencies are independent of the energy level detuning, providing protection against charge noise. We simulate gate operations and qubit rotations in the presence of quasistatic noise from charge and nuclear spins as well as leakage to nonqubit states, and predict that in silicon quantum dots gate fidelities greater than 99% can be achieved for two nearly-orthogonal rotation axes.
We report coherent operation of a singlet-triplet qubit controlled by the spatial arrangement of two confined electrons in an adjacent double quantum dot that is electrostatically coupled to the qubit. This four-dot system is the specific device geometry needed for two-qubit operations of a two-electron spin qubit. We extract the strength of the capacitive coupling between qubit and adjacent double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways toward implementation of a universal set of gates for singlet-triplet spin qubits.
We study the two-qubit controlled-NOT gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while tunneling between the quantum dots that belong to different qubits is forbidden. Therefore, the two qubits interact exclusively through the direct Coulomb repulsion of the electrons. We find that entangling two-qubit gates can be performed by the electrical biasing of quantum dots and/or tuning of the tunneling matrix elements between the quantum dots within the qubits. The entangling interaction can be controlled by tuning the bias through the resonance between the singly occupied and doubly occupied singlet ground states of a double quantum dot.