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arXiv:1706.09626 · Physical Review Applied

Gate-Sensing Charge Pockets in the Semiconductor-Qubit Environment

Xanthe Croot, Sebastian Pauka, Marie Claire Jarratt, H. Lu, Arthur C. Gossard, J.D. Watson, G.C. Gardner, S. Fallahi, M.J. Manfra, D. J. Reilly

Published Jun 12, 2019• 10 citations
arXivHTMLPDF

Abstract

Dispersive readout is a promising technique for enabling scalable measurements of gate-defined semiconductor qubits, but the repeated observation of anomalous signals when using this technique has not yet been explained. The authors study these anomalies and propose that they are caused by charge pockets that appear as gates are depleted, in close proximity to the intentionally formed quantum dots. Understanding these signals gives us a path toward eliminating them in the next generation of devices, and may help in identifying sources of charge noise, the origin of which is not fully understood for these systems.

DOI
10.1103/physrevapplied.11.064027

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Christian G. Prosko

Spin and topological-qubit based quantum computers require an easily scalable and highly sensitive method for readout and manipulation, for which Dispersive Gate Sensing (DGS) is a promising candidate [1, 2]. DGS enables sensing of single electron tunneling events in a mesoscopic system by measuring a reflected Radio Frequency (RF) signal from a resonator capacitively coupled to one of the system’s gate electrodes. From the resonator’s perspective, the system is modeled as an effective ‘parametric capacitance’ [3]. Motivated by its viability for qubit readout and control, we measure transport characteristics of a semiconducting-superconducting hybrid charge island system using this method. Doing so, we observe a spin degeneracy modulation of interdot tunnel couplings resulting from hybridization of a dot orbital with a subgap state of the superconductor, measured entirely within Coulomb blockade. Without DC measurement, we also track a subgap state’s energy via voltage intervals between island charge states as a function of field. Subsequently, we attempt to correlate changes in the resonator’s internal dissipation with coherence of tunneling into the superconducting island. In particular, we collapse a superconducting island’s lowest energy state to the Fermi level by applying a magnetic field. Contrary to expectations, internal dissipation in the resonator did not change dramatically with field, in fact decreasing at charge degeneracy points at all field strengths. We corroborate measurements with existing theory, augmented by simple analytical and numerical models demonstrating that coherence factors of superconducting quasiparticle states and the degeneracy of dot orbitals modulate parametric capacitance. A master equation model of finite temperature interdot tunneling is solved, agreeing with experimental evidence that Sisyphus dissipation is negligible when a dot orbital is hybridized with multiple independent quasiparticle states. To be employed in quantum computers, a full understanding of all phenomena contributing to a DGS signal in these hybrid systems is critical. Hence, these results mark a step towards unambiguous readout of Majorana parity in topological qubits [4].

•Jan 1, 2019•0 citations
Dispersive readout is a promising technique for enabling scalable measurements of gate-defined semiconductor qubits, but the repeated observation of anomalous signals when using this technique has not yet been explained. The authors study these anomalies and propose that they are caused by charge pockets that appear as gates are depleted, in close proximity to the intentionally formed quantum dots. Understanding these signals gives us a path toward eliminating them in the next generation of devices, and may help in identifying sources of charge noise, the origin of which is not fully understood for these systems.
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.
Sensitive charge detection has enabled qubit readout in solid-state systems. Recently, an alternative to the well-established charge detection via on-chip electrometers has emerged, based on in situ\textit{in situ}in situ gate detectors and radio-frequency dispersive readout techniques. This approach promises to facilitate scalability by removing the need for additional device components devoted to sensing. Here, we perform gate-based dispersive readout of an accumulation-mode silicon quantum dot. We observe that the response of an accumulation-mode gate detector is significantly affected by its bias voltage, particularly if this exceeds the threshold for electron accumulation. We discuss and explain these results in light of the competing capacitive contributions to the dispersive response.
The need for fast readout to measure the state of a quantum dot device has important applications in the capabilities of using them as a means for quantum information processing. Traditional charge sensors used to readout the charge state of a quantum dot device are very robust and sensitive electrometers that have been in use since the late 1980s. They pose an issue to the future of quantum dots as a viable means of quantum computing, and that is in their slow acquisition times of the charge state of the quantum dot. This rate of measurement means that implementing any quantum error correction scheme becomes very difficult or even unfeasible as the coherence times of these semiconductor systems is short compared to charge sensor’s acquisition times. A possibility to speed up the measurement process of the charge state is possible thanks to the atomic molecular and optical (AMO) physics community.Cavity quantum electrodynamics (CQED) is the study of light-matter interactions when both the light and matter are taken to be quantized. A photon may interact with an atom via a dipole interaction to excite it from its ground state to its excited state, and the reverse can occur where the atom emits a photon and decays from its excited state ii to the ground state. This fundamental interaction which has been extensively studied in the AMO community since the early 1960s had been adopted by the superconducting qubit community to measure the state of their qubits. These superconducting qubits, representing atoms, which are coupled to a resonant structure on chip, which represents the photons that can interact with the artificial atom. Since these systems were not traditional trapped or neutral atoms interacting with a photon via a laser, but instead planar circuit structures, the superconducting qubit community re-coined the term cavity quantum electrodynamics to circuit quantum electrodynamics, which we will refer to as cQED.The quantum dot community adapted these methods of what is known as dispersive readout; a capacitive change of the atomic like system, results in a dispersive shift which then alters the characteristic frequency response of the resonant structure. This has allowed for a new kind of charge sensor by means of measuring the resonators response due to its coupling to a quantum dot system. This can be done with very high frequency microwave circuitry, allowing much faster readout than is capable via traditional charge sensors. Thus, allowing a pathway to implement quantum error correction schemes with reasonable times compared to any dephasing or decoherence times of the semiconductor system. Furthermore, such fast readout allows for feedback protocols to be implemented to the system to correct for certain undesirable effects due to instruments or the system itself. Our work focuses on a limit of this cQED interaction of the quantum dots to a resonant structure allowing us to do fast readout of the quantum dot charge states via a dispersive shift.The work I will demonstrate in this dissertation will be in the efforts of fast readout on the charge occupation of a double quantum dot system which is galvanically coupled to a superconducting microwave resonator. This was done in a Si/SiGe heterostructure system where I designed, simulated, and fabricated the device which was optimized to have a stronger dispersive shift signal due to an enhanced gate lever arm that couples to the resonator. I will discuss our results of attaining a minimum integration time of 34.54 ns for a unity signal to noise ratio. This demonstrates a fast readout system in the community iii which could be extended to allow for even better readout speeds with faster instruments than what were available to me for the experiment. I will further discuss our characterization of the hybrid system and how we extracted a charge noise due to charging events between the two dots in our system up to around 10 kHz. This work demonstrates a robust dispersive readout scheme which helps in the scalability of hybrid superconducting-semiconducting architectures for means of quantum information processing.
Quantum computation requires a qubit-specific measurement capability to read out the final states of individual qubits. Promising semiconductor architectures use external readout electrometers, but these could be replaced by more scalable $g\phantom{\rule{0}{0ex}}a\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}e$ $s\phantom{\rule{0}{0ex}}e\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}s\phantom{\rule{0}{0ex}}o\phantom{\rule{0}{0ex}}r\phantom{\rule{0}{0ex}}s$, based on the dispersive coupling between an electrical resonator and the qubit. The authors present an optimized gate sensor and show that significantly better sensitivity arises from changing circuit topology to enhance the resonator's QQQ factor. Here CMOS-based quantum devices achieve charge sensitivity on par with that of the best single-electron electrometers.
Spin and topological-qubit based quantum computers require an easily scalable and highly sensitive method for readout and manipulation, for which Dispersive Gate Sensing (DGS) is a promising candidate [1, 2]. DGS enables sensing of single electron tunneling events in a mesoscopic system by measuring a reflected Radio Frequency (RF) signal from a resonator capacitively coupled to one of the system’s gate electrodes. From the resonator’s perspective, the system is modeled as an effective ‘parametric capacitance’ [3]. Motivated by its viability for qubit readout and control, we measure transport characteristics of a semiconducting-superconducting hybrid charge island system using this method. Doing so, we observe a spin degeneracy modulation of interdot tunnel couplings resulting from hybridization of a dot orbital with a subgap state of the superconductor, measured entirely within Coulomb blockade. Without DC measurement, we also track a subgap state’s energy via voltage intervals between island charge states as a function of field. Subsequently, we attempt to correlate changes in the resonator’s internal dissipation with coherence of tunneling into the superconducting island. In particular, we collapse a superconducting island’s lowest energy state to the Fermi level by applying a magnetic field. Contrary to expectations, internal dissipation in the resonator did not change dramatically with field, in fact decreasing at charge degeneracy points at all field strengths. We corroborate measurements with existing theory, augmented by simple analytical and numerical models demonstrating that coherence factors of superconducting quasiparticle states and the degeneracy of dot orbitals modulate parametric capacitance. A master equation model of finite temperature interdot tunneling is solved, agreeing with experimental evidence that Sisyphus dissipation is negligible when a dot orbital is hybridized with multiple independent quasiparticle states. To be employed in quantum computers, a full understanding of all phenomena contributing to a DGS signal in these hybrid systems is critical. Hence, these results mark a step towards unambiguous readout of Majorana parity in topological qubits [4].