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arXiv:1704.06312 · Physical Review Letters

High-Resolution Valley Spectroscopy of Si Quantum Dots

Xiao Mi, Csaba G. Péterfalvi, Guido Burkard, J. R. Petta

Published Oct 24, 2017• 83 citations
arXivHTMLPDF

Abstract

We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising the temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.

DOI
10.1103/physrevlett.119.176803

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We study an accumulation mode Si/SiGe double quantum dot (DQD) containing a single electron that is dipole coupled to microwave photons in a superconducting cavity. Measurements of the cavity transmission reveal dispersive features due to the DQD valley states in Si. The occupation of the valley states can be increased by raising the temperature or applying a finite source-drain bias across the DQD, resulting in an increased signal. Using the cavity input-output theory and a four-level model of the DQD, it is possible to efficiently extract valley splittings and the inter- and intravalley tunnel couplings.
The band structure of bulk silicon has a sixfold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still under intense investigation. Using cavity input-output theory, we propose a method for accurately determining the valley splitting in Si/SiGe double quantum dots embedded in a superconducting microwave resonator. We show that low lying valley states in the double quantum dot energy level spectrum lead to readily observable features in the cavity transmission. These features generate a ``fingerprint'' of the microscopic energy level structure of a semiconductor double quantum dot, providing useful information on valley splittings and intervalley coupling rates.
We theoretically study a silicon triple quantum dot (TQD) system coupled to a superconducting microwave resonator. The response signal of an injected probe signal can be used to extract information about the level structure by measuring the transmission and phase shift of the output field. This information can further be used to gain knowledge about the valley splittings and valley phases in the individual dots. Since relevant valley states are typically split by several [Formula: see text], a finite temperature or an applied external bias voltage is required to populate energetically excited states. The theoretical methods in this paper include a capacitor model to fit experimental charging energies, an extended Hubbard model to describe the tunneling dynamics, a rate equation model to find the occupation probabilities, and an input-output model to determine the response signal of the resonator.
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate gc/2π= 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively coupled to microwave photons, potentially enabling coherent electron-photon interactions in silicon.
Both quantum transport measurements in the Pauli blockade regime and microwave cavity transmission measurements are important tools for spin-qubit readout and characterization. Based on a generalized input-output theory we derive a theoretical framework to investigate how a double quantum dot (DQD) in a transport setup interacts with a coupled microwave resonator while the current through the DQD is rectified by Pauli blockade. We show that the output field of the resonator can be used to infer the leakage current and thus obtain insight into the blockade mechanisms. In the case of a silicon DQD, we show how the valley quasidegeneracy can impose limitations on this scheme. We also demonstrate that a large number of unknown DQD parameters including (but not limited to) the valley splitting can be estimated from the resonator response simultaneous to a transport experiment, providing more detailed knowledge about the microscopic environment of the DQD. Furthermore, we describe and quantify a back action of the resonator photons on the steady-state leakage current.
Charge separation from the (4,0)(4,0)(4,0) to the (3,1)(3,1)(3,1) state in a Si/SiGe double quantum dot is commonly used for initialization of spin qubits and Pauli-spin-blockade readout. It was used in recent experiments involving creation of the (3,1)(3,1)(3,1) singlet, and subsequent shuttling of one of the electrons. We present a theoretical description of the process of charge separation and singlet-triplet mixing, arriving at expressions for the singlet return probability that take into account experimentally observed finite probabilities of the creation of singlets with various patterns of valley occupations. In our analysis we focus on magnetic fields for which the electron spin Zeeman splitting is close to the valley splitting in one of the dots, when the spin-valley coupling causes a strong renormalization of the frequency of oscillations of singlet return probability. The latter effect has been recently used to perform valley splitting mapping by shuttling of one quantum dot to various locations with respect to the other. We give a detailed description of singlet-triplet dynamics near these spin-valley resonances and compare the results of calculations with measurements on double quantum dots in two distinct Si/SiGe heterostructures. Comparison of theory with experiments in which the presence of a few valley occupation patterns is visible, gives insight into the valley dependence of ggg-factors in these structures, providing support for a recently proposed theoretical model of this dependence. We also discuss how dephasing of singlet return probability oscillations near the spin-valley resonances is affected by valley splitting fluctuations caused by electric field noise.
We present a superconducting cavity-coupled double quantum dot (DQD) photodiode that achieves a maximum photon-to-electron conversion efficiency of 25% in the microwave domain. With a higher-quality-factor cavity and improved device design to prevent photon leakages through unwanted pathways, our device measures microwave signals down to the 100-aW power level and achieves sensitivity to probe microwave signals with one photon at a time in the cavity. We analyze the photodiode operation using the Jaynes-Cummings input-output theory, identifying the key improvements of stronger cavity-DQD coupling needed to achieve near-unity photodetection efficiency. The results presented in this work represent a crucial advancement toward near-unity microwave photodetection efficiency with single-cavity-photon sensitivity.