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arXiv:1704.00859 · Applied Physics Letters

Broadband parametric amplifiers based on nonlinear kinetic inductance artificial transmission lines

Saptarshi Chaudhuri, Dale Li, K. D. Irwin, Clint Bockstiegel, Johannes Hubmayr, Joel N. Ullom, Michael R. Vissers, J. Gao

Published Apr 10, 2017• 86 citations
arXivHTMLPDF

Abstract

We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loading and resonator phase shifters placed periodically along the transmission line. Our design offers several advantages over previous CPW-based amplifiers, including intrinsic 50 Ω characteristic impedance, natural suppression of higher pump harmonics, lower required pump power, and shorter total trace length. Experimental realizations of both versions of the amplifiers are demonstrated. With a transmission line length of 20 cm, we have achieved gains of 15 dB over several GHz of bandwidth.

DOI
10.1063/1.4980102

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We present broadband parametric amplifiers based on the kinetic inductance of superconducting NbTiN thin films in an artificial (lumped-element) transmission line architecture. We demonstrate two amplifier designs implementing different phase matching techniques: periodic impedance loading and resonator phase shifters placed periodically along the transmission line. Our design offers several advantages over previous CPW-based amplifiers, including intrinsic 50 Ω characteristic impedance, natural suppression of higher pump harmonics, lower required pump power, and shorter total trace length. Experimental realizations of both versions of the amplifiers are demonstrated. With a transmission line length of 20 cm, we have achieved gains of 15 dB over several GHz of bandwidth.
We present a fishbone-like lumped-element artificial transmission line to overcome impedance mismatch in a reflection-type Josephson parametric amplifier between a nonlinear resonator and an external transmission line. Using this easily prepared architecture, we design and fabricate a broadband Josephson parametric amplifier, which has gain in an excess of 20 dB with a bandwidth of hundreds of MHz. Furthermore, by varying the working point of the device, the operating frequency of amplification can be tuned in a wide frequency range of 1 GHz while the amplifier operates in the mode of either three-wave mixing or four-wave mixing. Such a parametric amplifier is suitable for engineering applications of superconducting circuit quantum electrodynamics.
Travelling wave parametric amplifiers (TWPAs) made from highly non-linear reactive superconducting thin films have been demonstrated to be a potentially viable quantum-noise-limited amplifier technology for various fundamental physics platforms, including microwave/mm/sub-mm astronomy, dark matter search experiments, neutrino mass experiments, and qubit readout. We present a kinetic inductance TWPA consisting of a patterned titanium nitride film on a sapphire substrate, which comprises a coplanar waveguide (CPW) with a continuous, smoothed periodic loading (PL) structure that modulates the characteristic impedance of the CPW in a double sinusoidal fashion. This double sinusoidal modulation creates much stronger dispersion features than a conventional PL design, which allows for phase matching and pump harmonic suppression over a much shorter transmission length, potentially leading to reduced losses. In this paper, we shall discuss in detail the design of our TWPA and present the predicted gain-bandwidth characteristics from electromagnetic simulations.
Broadband quantum-limited parametric amplifiers (PAs) are essential components in quantum information science and technology. Impedance-engineered resonator-based PAs and traveling-wave PAs are the primary approaches taken to overcome the gain-bandwidth constraint. While the former PAs are simpler to fabricate, the target characteristic impedance ZNR{Z}_{\mathrm{NR}}ZNR​ of the nonlinear resonator has been restricted to be below $10\phantom{\rule{0.2em}{0ex}}\mathrm{\ensuremath{\Omega}}$, requiring large capacitance. Moreover, these PAs have only been implemented with aluminum-based Josephson junctions (JJs), hindering their operation at high temperatures or strong magnetic fields. To address these issues, we propose a three-stage impedance-transformer scheme, showcased with a 20 nm thick, 250 nm wide, high-kinetic-inductance niobium-titanium-nitride (NbTiN\mathrm{Nb}\mathrm{Ti}\mathrm{N}NbTiN) film. Our scheme enables ZNR{Z}_{\mathrm{NR}}ZNR​ up to several tens of ohms---a tenfold improvement over conventional designs, achieved through an additional quarter-wavelength transmission line with a characteristic impedance of 180 $\mathrm{\ensuremath{\Omega}}$. Our kinetic-inductance impedance-engineered parametric amplifiers (KIMPAs), featuring a 330 fF shunt capacitor, demonstrate a phase-preserving amplification with a 450-MHz bandwidth at 17 dB gain, and added noise ranging from 0.5 to 1.3 quanta near the center frequency of 8.4 GHz. Owing to the high critical current of the NbTiN\mathrm{Nb}\mathrm{Ti}\mathrm{N}NbTiN nanowire, the KIMPA also achieves an output saturation power of up to $\ensuremath{-}51\ifmmode\pm\else\textpm\fi{}3$ dBm, approximately 25 dB higher than that of JJ-based PAs. This scheme also opens new possibilities for other three-wave-mixing building blocks.
Achieving amplification with high gain and quantum-limited noise is a difficult problem to solve. Parametric amplification using a superconducting transmission line with high kinetic inductance is a promising technology not only to solve this problem but also adding several benefits. Compared to other technologies, they have the potential to improve power saturation, achieve larger fractional bandwidths, and operate at higher frequencies. In this type of amplifier, the selection of the proper transmission line is a key element in its design. Given current fabrication limitations, traditional lines such as coplanar waveguides (CPW), are not ideal for this purpose, since it is difficult to make them with the proper characteristic impedance for good matching and slow enough phase velocity for making them more compact. Capacitively loaded lines, also known as artificial lines, are a good solution to this problem. However, few design rules or models have been presented to guide their accurate design. This fact is even more crucial considering that they are usually fabricated in the form of Floquet lines that have to be designed carefully to suppress undesired harmonics appearing in the parametric process. In this article we present, first, a new modeling strategy, based on the use of electromagnetic-simulation software, and, second, a first-principles model that facilitate and speed the design of CPW artificial lines and of Floquet lines made out of them. Then, we present comparisons with experimental results that demonstrate their accuracy. Finally, the theoretical model allows one to predict the high-frequency behavior of the artificial lines, showing that they are good candidates for implementing parametric amplifiers above 100 GHz.
Abstract A Kinetic Inductance Traveling Wave Amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly niobium titanium nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, and compression power and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter, we see an initial improvement in the flux noise [1]. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization—including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5–7.25 GHz, a maximum practical gain of 12 dB, and typical gain ripple under 4 dB peak to peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally, we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
Quantum limited amplifiers are sought after for a wide range of applications within quantum technologies and sensing. One promising candidate is the travelling wave parametric amplifier which exploits the non-linear kinetic inductance of a superconducting transmission line. This type of microwave amplifier promises to deliver a high gain, a quantum limited noise performance over several GHz bandwidth, and a high dynamic range. However, practical realizations of this type of device have so far been limited by fabrication defects, since the length of the superconducting transmission line required for achieving substantial parametric gain is on the order of ∼1 m. Here, we report on a design for a microwave traveling wave amplifier based on a slow propagation line comprising a central strip with high kinetic inductance and quasi-fractal line-to-ground capacitors. Due to an enhanced per unit length inductance (73 nH cm−1) and capacitance (15 pF cm−1), the line has a microwave propagation velocity as low as 9.8 × 108 cm s−1. This translates into parametric gain up to 0.5 dB cm−1 and a total gain of 6 dB for just a ∼10 cm long transmission line. Moreover, the flexibility of the presented design allows balancing the line inductance and capacitance in order to keep the characteristic impedance close to 50 Ω and to suppress standing waves, both factors being essential in order to implement a practical parametric amplifier in the microwave domain.