Quantum limited amplifiers are sought after for a wide range of applications within quantum technologies and sensing. One promising candidate is the travelling wave parametric amplifier which exploits the non-linear kinetic inductance of a superconducting transmission line. This type of microwave amplifier promises to deliver a high gain, a quantum limited noise performance over several GHz bandwidth, and a high dynamic range. However, practical realizations of this type of device have so far been limited by fabrication defects, since the length of the superconducting transmission line required for achieving substantial parametric gain is on the order of ∼1 m. Here, we report on a design for a microwave traveling wave amplifier based on a slow propagation line comprising a central strip with high kinetic inductance and quasi-fractal line-to-ground capacitors. Due to an enhanced per unit length inductance (73 nH cm−1) and capacitance (15 pF cm−1), the line has a microwave propagation velocity as low as 9.8 × 108 cm s−1. This translates into parametric gain up to 0.5 dB cm−1 and a total gain of 6 dB for just a ∼10 cm long transmission line. Moreover, the flexibility of the presented design allows balancing the line inductance and capacitance in order to keep the characteristic impedance close to 50 Ω and to suppress standing waves, both factors being essential in order to implement a practical parametric amplifier in the microwave domain.
Quantum limited amplifiers are sought after for a wide range of applications within quantum technologies and sensing. One promising candidate is the travelling wave parametric amplifier which exploits the non-linear kinetic inductance of a superconducting transmission line. This type of microwave amplifier promises to deliver a high gain, a quantum limited noise performance over several GHz bandwidth, and a high dynamic range. However, practical realizations of this type of device have so far been limited by fabrication defects, since the length of the superconducting transmission line required for achieving substantial parametric gain is on the order of ∼1 m. Here, we report on a design for a microwave traveling wave amplifier based on a slow propagation line comprising a central strip with high kinetic inductance and quasi-fractal line-to-ground capacitors. Due to an enhanced per unit length inductance (73 nH cm−1) and capacitance (15 pF cm−1), the line has a microwave propagation velocity as low as 9.8 × 108 cm s−1. This translates into parametric gain up to 0.5 dB cm−1 and a total gain of 6 dB for just a ∼10 cm long transmission line. Moreover, the flexibility of the presented design allows balancing the line inductance and capacitance in order to keep the characteristic impedance close to 50 Ω and to suppress standing waves, both factors being essential in order to implement a practical parametric amplifier in the microwave domain.
In the field of circuit quantum electrodynamics (c-QED), the coherent interaction of two-level systems (TLSs) with photons, confined in a superconducting microwave\nresonator, opens up new possibilities for quantum computing experiments.\nThis thesis contributes to the expansion of c-QED tool-box with slow propagation line-based solutions for ubiquitous techniques, such as cryogenic Near Field Scanning Microwave Microscopy (NSMM), Electron Spin Resonance (ESR) spectroscopy and Traveling Wave Parametric Amplifier (TWPA). For NSMM, novel compact superconducting fractal resonators have been developed to be directly integrated on a scanning probe. We report NSMM operation based on a microwave high-Q resonator populated with less than 10^3 photons and demonstrate a capacitive sensitivity of 0.38 aF/rtHz.\nThe unique properties and the design flexibility of fractal resonators also boost their resiliency to strong magnetic fields for ESR studies. The reported high Q-factors above 10^5 in a magnetic field up to 0.4 T translate into ESR sensitivity of 5 10^5 spins/rtHz.\nFurthermore, we demonstrate the operation of a practical TWPA based on a slow propagation fractal line. We achieve per unit length gain of > 0.5 dB/cm and total gain of ~6 dB for a 10 cm long line. Due to a radically shortened line, the amplifier is less vulnerable to fabrication defects. Moreover, due to a successful impedance matching\nbetween the amplifier line and in/out terminals, the obtained gain vs frequency characteristic has only moderate ripples. To mitigate a common TWPA problem of\ncoupling to parasitic ground plane resonances, we deploy a novel multilayer fabrication technology, which combines high and low kinetic inductance (KI) elements.\nFinally, we present an alternative implementation of a slow propagation line: a microstrip line with a thin film Atomic Layer Deposition (ALD) Al2O3 oxide. The resonator, based on a segment of a microstrip line, has a Q-factor on the order of 10^4 at single photon powers, reaching up to 10^5 at higher powers. As an additional functionality,\nwe incorporate dc current control over KI so that the resonance frequency is tuned by 62 MHz range, which corresponds to a KI-related nonlinearity of 3%.
We present the design and experimental characterization of a kinetic-inductance traveling-wave parametric amplifier (KI-TWPA) for sub-GHz frequencies. KI-TWPAs amplify signals through nonlinear mixing processes supported by the nonlinear kinetic inductance of a superconducting transmission line. The device described here utilizes a compactly meandered TiN microstrip transmission line to achieve the length needed to amplify sub-GHz signals. It is operated in a frequency translating mode where the amplified signal tone is terminated at the output of the amplifier, and the idler tone at approximately 2.5~GHz is brought out of the cryostat. By varying the pump frequency, a gain of up to 22 dB was achieved in a tunable range from about 450 to 850~MHz. Use of TiN as the nonlinear element allows for a reduction of the required pump power by roughly an order of magnitude relative to NbTiN, which has been used for previous KI-TWPA implementations. This amplifier has the potential to enable high-sensitivity and high-speed measurements in a wide range of applications, such as quantum computing, astrophysics, and dark matter detection.
We present the design and experimental characterization of a kinetic inductance traveling-wave parametric amplifier (KI-TWPA) for subgigahertz frequencies. KI-TWPAs amplify signals through mixing processes supported by the nonlinear kinetic inductance of a superconducting transmission line. The device described here uses a compactly meandered TiN microstrip transmission line to achieve the length needed to amplify subgigahertz signals. It is operated in a frequency-translating mode where the amplified signal tone is terminated at the output of the amplifier, and the idler tone at approximately 2.5 GHz is brought out of the cryostat. By varying the pump frequency, a gain of up to 22 dB was achieved in a tunable range from about 450 to 850 MHz. Using TiN as the nonlinear element allows for a reduction of the required pump power by roughly an order of magnitude relative to NbTiN, which has been used for previous KI-TWPA implementations. This amplifier has the potential to enable high-sensitivity and high-speed measurements in a wide range of applications, such as quantum computing, astrophysics, and dark matter detection.
Abstract A Kinetic Inductance Traveling Wave Amplifier (KIT) utilizes the nonlinear kinetic inductance of superconducting films, particularly niobium titanium nitride (NbTiN), for parametric amplification. These amplifiers achieve remarkable performance in terms of gain, bandwidth, and compression power and frequently approach the quantum limit for noise. However, most KIT demonstrations have been isolated from practical device readout systems. Using a KIT as the first amplifier in the readout chain of an unoptimized microwave SQUID multiplexer coupled to a transition-edge sensor microcalorimeter, we see an initial improvement in the flux noise [1]. One challenge in KIT integration is the considerable microwave pump power required to drive the non-linearity. To address this, we have initiated efforts to reduce the pump power by using thinner NbTiN films and an inverted microstrip transmission line design. In this article, we present the new transmission line design, fabrication procedure, and initial device characterization—including gain and added noise. These devices exhibit over 10 dB of gain with a 3 dB bandwidth of approximately 5.5–7.25 GHz, a maximum practical gain of 12 dB, and typical gain ripple under 4 dB peak to peak. We observe an appreciable impedance mismatch in the NbTiN transmission line, which is likely the source of the majority of the gain ripple. Finally, we perform an initial noise characterization and demonstrate system-added noise of three quanta or less over nearly the entire 3 dB bandwidth.
Ultralow-noise microwave amplification and detection play a central role in different applications, going from fundamental physics experiments to the deployment of quantum technologies. In many applications the necessity of reading multiple detectors, or cavities or qubits, calls for large bandwidth amplifiers with the lowest possible noise. Current technologies are based on High Electron Mobility Transistors and Josephson Parametric Amplifiers. Both have limitations, the former in terms of the minimum noise, the latter in terms of bandwidth. Superconducting Traveling Wave Parametric Amplifiers (TWPAs) have the potential of offering quantum limited noise and large bandwidth. These amplifiers are based on the parametric amplification of microwaves traveling along a transmission line with embedded nonlinear elements. We are developing superconducting TWPAs based both on Josephson junction arrays (Traveling Wave Josephson Parametric Amplifiers) and on nonlinear kinetic inductance (Dispersion Engineered Traveling Wave Kinetic Inductance Amplifiers). Our goal is to achieve large bandwidth (in the 5 to 10 GHz range), large gain (more than 20 dB), large saturation power (more than −50 dBm), and near quantum limited noise (noise temperature less than 600 mK). Current achievements in the design and development of the high performance TWPAs are here reported and discussed, together with current limitations and possible future developments.
Kinetic inductance traveling-wave parametric amplifiers (KI-TWPAs) have a wide instantaneous bandwidth with a near quantum-limited noise performance and a relatively high dynamic range. Because of this, they are suitable readout devices for cryogenic detectors and superconducting qubits and have a variety of applications in quantum sensing. This work discusses the design, fabrication, and performance of a KI-TWPA based on four-wave mixing in a NbTiN microstrip transmission line. This device amplifies a signal band from 4 to 8 GHz without contamination from image tones, which are produced in a separate higher frequency band. The 4–8 GHz band is commonly used to read out cryogenic detectors, such as microwave kinetic inductance detectors and Josephson junction-based qubits. We report a measured maximum gain of over 20 dB using four-wave mixing with a 1 dB gain compression point of −58 dBm at 15 dB of gain over that band. The bandwidth and peak gain are tunable by adjusting the pump-tone frequency and power. Using a Y-factor method, we measure an amplifier-added noise of 0.5 ≤ Nadded ≤ 1.5 photons from 4.5 to 8 GHz.