arXiv:1702.07871 · Optics Letters
Selective reflection from an Rb layer with a thickness below λ/12 and applications
Armen D. Sargsyan, A. Papoyan, Ifan G. Hughes, Charles S. Adams, David G. Sarkisyan
Abstract
We have studied the peculiarities of selective reflection from an Rb vapor cell with a thickness L<70 nm, which is smaller than the length scale of evanescent fields λ/2π and more than an order of magnitude smaller than the optical wavelength. A 240 MHz redshift due to the atom-surface interaction is observed for a cell thickness of L=40 nm. In addition, complete frequency-resolved hyperfine Paschen-Back splitting of atomic transitions to four components for Rb87 and six components for Rb87 is recorded in a strong magnetic field (B>2 kG).