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arXiv:1609.04562 · Physical Review Letters

Direct Identification of Dilute Surface Spins on Al2O3 : Origin of Flux Noise in Quantum Circuits

Sebastian E. de Graaf, A. A. Adamyan, T. Lindström, D. Érts, Sergey Kubatkin, Alexander Ya. Tzalenchuk, Andrey V. Danilov

Published Jan 31, 2017• 85 citations
arXivHTMLPDF

Abstract

An on-chip electron spin resonance technique is applied to reveal the nature and origin of surface spins on Al_{2}O_{3}. We measure a spin density of 2.2×10^{17} spins/m^{2}, attributed to physisorbed atomic hydrogen and S=1/2 electron spin states on the surface. This is direct evidence for the nature of spins responsible for flux noise in quantum circuits, which has been an issue of interest for several decades. Our findings open up a new approach to the identification and controlled reduction of paramagnetic sources of noise and decoherence in superconducting quantum devices.

DOI
10.1103/physrevlett.118.057703

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An on-chip electron spin resonance technique is applied to reveal the nature and origin of surface spins on Al_{2}O_{3}. We measure a spin density of 2.2×10^{17} spins/m^{2}, attributed to physisorbed atomic hydrogen and S=1/2 electron spin states on the surface. This is direct evidence for the nature of spins responsible for flux noise in quantum circuits, which has been an issue of interest for several decades. Our findings open up a new approach to the identification and controlled reduction of paramagnetic sources of noise and decoherence in superconducting quantum devices.
Quantum information technology puts stringent demands on the quality of materials and interfaces in the pursuit of increased device coherence. Yet, little is known about the chemical structure and origins of paramagnetic impurities that produce flux/charge noise that causes decoherence of fragile quantum states and impedes the progress toward large-scale quantum computing. Here, we perform high magnetic field electron paramagnetic resonance (HFEPR) and hyperfine multispin spectroscopy on α-Al 2 O 3 , a common substrate for quantum devices. In its amorphous form, α-Al 2 O 3 is also unavoidably present in aluminum-based superconducting circuits and qubits. The detected paramagnetic centers are immanent to the surface and have a well-defined but highly complex structure that extends over multiple hydrogen, aluminum, and oxygen atoms. Modeling reveals that the radicals likely originate from well-known reactive oxygen chemistry common to many metal oxides. We discuss how EPR spectroscopy might benefit the search for surface passivation and decoherence mitigation strategies.
The improvement of quantum computing technologies relies on the reduction of flux noise that contributes to decoherence. Recent work has shown that the majority of flux noise is due to impurities and defects on the surface of the qubits [1], [2]. Electron spin resonance (ESR) is a prime candidate to detect these defects, but lacks the sensitivity and ability to provide information on the physical location of the defects. We report upon ESR measurements utilizing a non-resonant probe integrated within a semiconductor wafer probing station which could be used to detect paramagnetic defects believed to contribute to flux noise in quantum devices. Our approach greatly enhances ESR's sensitivity and provides a high spatial resolution on the surface of unaltered fully processed wafers and devices at room temperature. We demonstrate the effectiveness of our method to detect defects on the surface of materials with a spin sensitivity improvement of roughly $10,000 × compared to classical ESR. The integration of a non-resonant probe into a standard semiconductor wafer probing setup has already been shown to be able to obtain a 2D map of unpaired spins on the surface of samples [3]. The technique offers a pathway for characterization of the defects which contribute to flux noise, which would provide critical insight into reducing decoherence mechanisms.
Superconducting qubits are hampered by flux noise produced by surface spins from a number of sources. Recent experiments indicated that hydrogen (H) atoms may be one of the sources. Using density functional theory calculations, we report that H atoms either embedded in or adsorbed on an {\alpha}-Al2O3(0001) surface have sizeable spin moments ranging from 0.81 to 0.87 {\mu}B with extremely shallow energy barriers for spin reorientation as low as ~10 mK. Furthermore, H adatoms on the surface attract gas molecules such as O2 and produce new spin sources. We propose using a protective graphene coating on an {\alpha}-Al2O3(0001) surface to eliminate H-induced surface spins and to screen other adsorbates from the environment.
Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are interconnected, exacerbating the impact on circuit performance. We use an on-chip electron spin resonance (ESR) technique, with niobium nitride ( Nb N ) superconducting resonators, to study surface spins on silicon and the effect of postfabrication surface treatments. We identify two distinct spin species that are characterized by different spin-relaxation times and respond selectively to various surface treatments (annealing and hydrofluoric acid). Only one of the two spin species has a significant impact on the TLS-limited resonator quality factor at low-power (near-single-photon) excitation. We observe a three- to fivefold reduction in the total density of spins after surface treatments and demonstrate the efficacy of ESR spectroscopy in developing strategies to mitigate loss and decoherence in quantum systems. Published by the American Physical Society 2024
Magnetic flux noise is a dominant source of dephasing and energy relaxation in superconducting qubits. The noise power spectral density varies with frequency as 1/fα, with α1, and spans 13 orders of magnitude. Recent work indicates that the noise is from unpaired magnetic defects on the surfaces of the superconducting devices. Here, we demonstrate that adsorbed molecular O2 is the dominant contributor to magnetism in superconducting thin films. We show that this magnetism can be reduced by appropriate surface treatment or improvement in the sample vacuum environment. We observe a suppression of static spin susceptibility by more than an order of magnitude and a suppression of 1/f magnetic flux noise power spectral density of up to a factor of 5. These advances open the door to the realization of superconducting qubits with improved quantum coherence.
Noise and decoherence due to spurious two-level systems located at material interfaces are long-standing issues for solid-state quantum devices. Efforts to mitigate the effects of two-level systems have been hampered by a lack of knowledge about their chemical and physical nature. Here, by combining dielectric loss, frequency noise and on-chip electron spin resonance measurements in superconducting resonators, we demonstrate that desorption of surface spins is accompanied by an almost tenfold reduction in the charge-induced frequency noise in the resonators. These measurements provide experimental evidence that simultaneously reveals the chemical signatures of adsorbed magnetic moments and highlights their role in generating charge noise in solid-state quantum devices.