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arXiv:1604.00137 · Applied Optics

Laser frequency locking with 46 GHz offset using an electro-optic modulator for magneto-optical trapping of francium atoms

K. Harada, T. Aoki, S. Ezure, K. Kato, T. Hayamizu, H. Kawamura, T. Inoue, H. Arikawa, T. Ishikawa, T. Aoki, A. Uchiyama, K. Sakamoto, S. Ito, M. Itoh, S. Ando, A. Hatakeyama, K. Hatanaka, K. Imai, T. Murakami, H. S. Nataraj, Y. Shimizu, T. Sato, T. Wakasa, H. P. Yoshida, Y. Sakemi

Published Feb 9, 2016• 22 citations

Abstract

We demonstrate frequency offset locking between two laser sources using a waveguide-type electro-optic modulator (EOM) with 10th-order sidebands for magneto-optical trapping of Fr atoms. The frequency locking error signal was successfully obtained by performing delayed self-homodyne detection of the beat signal between the repumping frequency and the 10th-order sideband component of the trapping light. Sweeping the trapping-light and repumping-light frequencies with keeping its frequency difference of 46 GHz was confirmed over 1 GHz by monitoring the Doppler absorption profile of I₂. This technique enables us to search for a resonance frequency of magneto-optical trapping of Fr.

DOI: 10.1364/ao.55.001164

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We demonstrate frequency offset locking between two laser sources using a waveguide-type electro-optic modulator (EOM) with 10th-order sidebands for magneto-optical trapping of Fr atoms. The frequency locking error signal was successfully obtained by performing delayed self-homodyne detection of the beat signal between the repumping frequency and the 10th-order sideband component of the trapping light. Sweeping the trapping-light and repumping-light frequencies with keeping its frequency difference of 46 GHz was confirmed over 1 GHz by monitoring the Doppler absorption profile of I₂. This technique enables us to search for a resonance frequency of magneto-optical trapping of Fr.

By optical injection of an 852-nm extended-cavity diode laser (master laser) to lock the + 1-order sideband of a ~9-GHz-current-modulated diode laser (slave laser), we generate a pair of phase-locked lasers with a frequency difference up to ~9-GHz for a cesium (Cs) magneto-optical trap (MOT) with convenient tuning capability. For a cesium MOT, the master laser acts as repumping laser, locked to the Cs 6S₁/₂ (F = 3) - 6P₃/₂ (F' = 4) transition. When the + 1-order sideband of the 8.9536-GHz-current-modulated slave laser is optically injection-locked, the carrier operates on the Cs 6S₁/₂ (F = 4) - 6P₃/₂ (F' = 5) cooling cycle transition with -12 MHz detuning and acts as cooling/trapping laser. When carrying a 9.1926-GHz modulation signal, this phase-locked laser system can be applied in the fields of coherent population trapping and coherent manipulation of Cs atomic ground states.

A simple and robust technique is reported to offset lock a single semiconductor laser to the atom resonance line with a frequency difference easily adjustable from a few tens of megahertz up to tens of gigahertz. The proposed scheme makes use of the frequency modulation spectroscopy by modulating sidebands of a fiber electro-optic modulator output. The short-term performances of a frequency offset locked semiconductor laser are experimentally demonstrated with the Allan variance of around 3.9×10?11 at a 2 s integration time. This method may have many applications, such as in Raman optics for an atom interferometer.

Offset locking is crucial to many physics experiments. Wide range offset locks are desirable, as they increase the span of usable frequencies in an experiment. Here, we experimentally realize a wide-range offset lock using a beat-note setup combined with electro-optic phase modulation. By using frequency down-conversion of the beat note and locking to sidebands generated by electro-optic modulation, we achieve an offset range of ± 220.1 GHz with offset frequency fluctuations under 0.1 Hz and a phase error variance of 0.017 rad 2 over a 100 kHz bandwidth, greatly widening the range compared to past setups using this method. The relative simplicity of our setup provides a compelling method for locking at offsets in the hundreds of GHz range.

The authors have used an electromagnetically induced transparency resonance in rubidium as a dispersive reference to lock the relative frequency of two lasers to the atomic ground-state hyperfine splitting. The beat frequency between the two lasers directly generates a microwave signal at 3.036GHz (Rb85) or 6.835GHz (Rb87). High bandwidth (600kHz) feedback was achieved with only low-frequency (10MHz) electronics using the frequency modulation sideband method. The spectral width of the microwave beat frequency was reduced to less than 1kHz. The technique offers a convenient and low-cost method suitable for many topical two-frequency experiments, including coherent population trapping, slow light, lasing without inversion, and Raman sideband cooling.

Two phase-coherent Raman laser beams with a frequency offset of 6.835 GHz were generated by sideband injection-locking technique. A master diode laser was phase-modulated at 6.835 GHz by a fiber electro-optic modulator. A slave diode was injection-locked to the -1 sideband of the phase-modulated beam, and another diode was locked to the master laser carrier. This method produced stable and spatially separated Raman lasers with a large frequency shift range (>180 MHz). The relative linewidth of these two beams was ∼1 Hz, and the unwanted carrier mode was suppressed down to -24 dB. Stimulated Raman transitions and Ramsey fringes were driven by Raman lasers in a cold atomic beam.