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arXiv:1602.03096 · Optics Express

Correlated photon pair generation in AlGaAs nanowaveguides via spontaneous four-wave mixing

Pisek Kultavewuti, Eric Y. Zhu, Li Qian, Vincenzo Pusino, Marc Sorel, J. Stewart Aitchison

Published Feb 9, 2016• 45 citations
arXivHTMLPDF

Abstract

We demonstrate a source of correlated photon pairs which will have applications in future integrated quantum photonic circuits. The source utilizes spontaneous four-wave mixing (SFWM) in a dispersion-engineered nanowaveguide made of AlGaAs, which has merits of negligible two-photon absorption and low spontaneous Raman scattering (SpRS). We observe a coincidence-to-accidental (CAR) ratio up to 177, mainly limited by propagation losses. Experimental results agree well with theoretical predictions of the SFWM photon pair generation and the SpRS noise photon generation. We also study the effects from the SpRS, propagation losses, and waveguide lengths on the quality of our source.

DOI
10.1364/oe.24.003365

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We demonstrate a source of correlated photon pairs which will have applications in future integrated quantum photonic circuits. The source utilizes spontaneous four-wave mixing (SFWM) in a dispersion-engineered nanowaveguide made of AlGaAs, which has merits of negligible two-photon absorption and low spontaneous Raman scattering (SpRS). We observe a coincidence-to-accidental (CAR) ratio up to 177, mainly limited by propagation losses. Experimental results agree well with theoretical predictions of the SFWM photon pair generation and the SpRS noise photon generation. We also study the effects from the SpRS, propagation losses, and waveguide lengths on the quality of our source.
We investigate theoretically the spontaneous four-wave mixing (FWM) process that occurs in optical waveguides, as a source of quantum correlated photon-pairs. We consider that the waveguide used to implement the spontaneous FWM process presents a high value of nonlinear parameter, γ = 93.4 W-1m-1, and a non-negligible value of loss coefficient, α = 133.3 dB/m. Moreover, the theoretical model also consider the Raman scattering that inevitably accompanies the FWM process, and generates time-uncorrelated (noise) photon pairs. We use the coincident-to-accidental ratio (CAR) as a figure of merit of the photon pair source, and we were able to observe a CAR of the order of 65 in a high loss regime. After, we use the time-correlated photon pairs generated by the spontaneous FWM process to implement a heralded single photon source at waveguide output. In this scenario, the detection of one photon of the pair heralds the presence of the other photon. The quality of the source was studied by the evaluation of the second order coherence function for one photon of the pair conditioned by the detection of its twin photon. We observe that the presence of a high loss coefficient tends to improve the quality of the photon source, when compared with the lossless regime, even considering the Raman noise photons. We obtain a value for the conditional second order coherence function of the order of 0.11 in absence of loss, and a value of 0.03 for a loss coefficient of 133.3 dB/m.
We report on the generation of correlated photon pairs in AlGaAs-on-insulator (AlGaAs-OI) waveguides through nonlinear spontaneous four-wave-mixing (SFWM). Our measurements reveal an SFWM pair generation efficiency of ∼ 0.096 × 10 12 p a i r s / ( s W 2 ) at a wavelength of 1550 nm. This is one of the highest efficiencies achieved to date for integrated SFWM sources. A maximal coincidence-to-accidental ratio of ∼ 122 is measured. A spectral characterization of the device’s pair emission at the quantum level demonstrates a broad generation bandwidth of 2.0 THz, which is important for frequency multiplexing applications. Our results indicate that AlGaAs-OI is an efficient material platform for integrated quantum photonics at telecom wavelengths.
We demonstrate low Raman-noise correlated photon-pair generation in a dispersion-engineered 10 mm As2S3 chalcogenide waveguide at room temperature. We show a coincidence-to-accidental ratio (CAR) of 16.8, a 250 times increase compared with previously published results in a chalcogenide waveguide, with a corresponding brightness of 3×10(5) pairs·s(-1)·nm(-1) generated at the chip. Dispersion engineering of our waveguide enables photon passbands to be placed in the low spontaneous Raman scattering (SpRS) window at 7.4 THz detuning from the pump. This Letter shows the potential for As2S3 chalcogenide to be used for nonlinear quantum photonic devices.