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arXiv:1501.03499 · Physical Review Letters

Phonon-Assisted Gain in a Semiconductor Double Quantum Dot Maser

Michael J. Gullans, Y.-Y. Liu, J. Stehlik, J. R. Petta, Jacob M. Taylor

Published May 13, 2015• 57 citations
arXivHTMLPDF

Abstract

We develop a microscopic model for the recently demonstrated double-quantum-dot maser. In characterizing the gain of this device we find that, in addition to the direct stimulated emission of photons, there is a large contribution from the simultaneous emission of a photon and a phonon, i.e., the phonon sideband. We show that this phonon-assisted gain typically dominates the overall gain, which leads to masing. Recent experimental data are well fit with our model.

DOI
10.1103/physrevlett.114.196802

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We experimentally study the phase stabilization of a semiconductor double-quantum-dot (DQD) single-atom maser by injection locking. A voltage-biased DQD serves as an electrically tunable microwave frequency gain medium. The statistics of the maser output field demonstrate that the maser can be phase locked to an external cavity drive, with a resulting phase noise $\mathcal{L}=\ensuremath{-}99$ dBc/Hz at a frequency offset of 1.3 MHz. The injection locking range, and the phase of the maser output relative to the injection locking input tone are in good agreement with Adler's theory. Furthermore, the electrically tunable DQD energy level structure allows us to rapidly switch the gain medium on and off, resulting in an emission spectrum that resembles a frequency comb. The free running frequency comb linewidth is $\ensuremath{\approx}8$ kHz and can be improved to less than 1 Hz by operating the comb in the injection locked regime.
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