We study decoherence of a field-driven qubit in the presence of environmental noises. For a general qubit, we find that driving, whether on-resonance or off-resonance, alters the qubit decoherence rates (including dissipation and pure dephasing), allowing both blue and red sideband contributions from the reservoir. Depending on the noise spectral density, driving field detuning, and driving field phase shift, the qubit decoherence rates could be either accelerated or reduced. We apply our general theory to the system of an electron spin qubit that is confined in a quantum dot and driven by an in-plane electric field. We analyze how spin relaxation induced by the electrical noise due to electron-phonon interaction varies as a function of driving frequency, driving magnitude, driving field phase shift, and spin-orbit coupling strengths.
Quantum dot-based quantum computation employs extensively the exchange interaction between nearby electronic spins in order to manipulate and couple different qubits. The exchange interaction, however, couples the qubit states to charge noise, which reduces the fidelity of the quantum gates that employ it. The effect of charge noise can be mitigated by working at noise sweetspots in which the sensitivity to charge variations is reduced. In this work we study the response to charge noise of a double quantum dot based qubit in the presence of ac gates, with arbitrary driving amplitudes, applied either to the dot levels or to the tunneling barrier. Tuning with an ac driving allows to manipulate the sign and strength of the exchange interaction as well as its coupling to environmental electric noise. Moreover, we show the possibility of inducing a second-order sweetspot in the resonant spin-triplet qubit in which the dephasing time is significantly increased.
We theoretically study the dephasing of an Andreev spin qubit (ASQ) due to electric and magnetic noise. Using a tight-binding model, we calculate the Andreev states formed in a Josephson junction where the link is a semiconductor with strong spin-orbit interaction. As a result of both the spin-orbit interaction and induced superconductivity, the local charge and spin of these states vary as a function of externally controllable parameters: the phase difference between the superconducting leads, an applied magnetic field, and filling of the underlying semiconductor. Concomitantly, coupling to fluctuations of the electric or magnetic environment will vary, which informs the rate of dephasing. We qualitatively predict the dependence of dephasing on the nature of the environment, magnetic field, phase difference between the junction, and filling of the semiconductor. Comparing the simulated electric- and magnetic-noise-induced dephasing rate to experiment suggests that the dominant source of noise is magnetic. Moreover, by appropriately tuning these external parameters, we find sweet spots at which we predict an enhancement in ASQ coherence times.
We investigate the behavior of qubits consisting of three electron spins in double and triple quantum dots subject to external electric fields. Our model includes two independent bias parameters, $\ensuremath{\varepsilon}$ and ${\ensuremath{\varepsilon}}_{M}$, which both couple to external electromagnetic fields and can be controlled by gate voltages applied to the quantum dot structures. By varying these parameters, one can switch the qubit type by shifting the energies in the single quantum dots, thus changing the electron occupancy in each dot. Starting from the asymmetric resonant exchange qubit with a (2,0,1) and (1,0,2) charge admixture, one can smoothly cross over to the resonant exchange qubit with a detuned (1,1,1) charge configuration, and to the exchange-only qubit with the same charge configuration but equal energy levels down to the hybrid qubits with (1,2,0) and (0,2,1) charge configurations. Here,
(l,m,n) describes a configuration with
l electrons in the left dot,
m electrons in the center dot, and
n electrons in the right dot. We first focus on random electromagnetic field fluctuations, i.e., ``charge noise,'' at each quantum dot resulting in dephasing of the qubit, and we provide a complete map of the resulting dephasing time as a function of the bias parameters. We pay special attention to the so-called sweet spots and double sweet spots of the system, which are least susceptible to noise. In the second part, we investigate the coupling of the qubit system to the coherent quantized electromagnetic field in a superconducting strip-line cavity, and we also provide a complete map of the coupling strength as a function of the bias parameters. We analyze the asymmetric qubit-cavity coupling via $\ensuremath{\varepsilon}$ and the symmetric coupling via ${\ensuremath{\varepsilon}}_{M}$.
We study theoretically the phonon-induced relaxation and decoherence processes in the hybrid qubit in silicon. A hybrid qubit behaves as a charge qubit when the detuning is close to zero and as a spin qubit for large detuning values. It is realized starting from an electrostatically defined double quantum dot where three electrons are confined and manipulated through only electrical tuning. By employing a three-level effective model for the qubit and describing the environment bath as a series of harmonic oscillators in the thermal equilibrium states, we extract the relaxation and decoherence times as a function of the bath spectral density and of the bath temperature using the Bloch-Redfield theory. For Si quantum dots the energy dispersion is strongly affected by the physics of the valley, i.e., the conduction band minima, so we also included the contribution of the valley excitations in our analysis. Our results offer fundamental information on the system decoherence properties when the unavoidable interaction with the environment is included and temperature effects are considered.
The interaction of solid-state qubits with environmental degrees of freedom strongly affects the qubit dynamics, and leads to decoherence. In quantum information processing with solid-state qubits, decoherence significantly limits the performances of such devices. Therefore, it is necessary to fully understand the mechanisms that lead to decoherence. In this review, we discuss how decoherence affects two of the most successful realizations of solid-state qubits, namely, spin qubits and superconducting qubits. In the former, the qubit is encoded in the spin 1/2 of the electron, and it is implemented by confining the electron spin in a semiconductor quantum dot. Superconducting devices show quantum behaviour at low temperatures, and the qubit is encoded in the two lowest energy levels of a superconducting circuit. The electron spin in a quantum dot has two main decoherence channels, a (Markovian) phonon-assisted relaxation channel, due to the presence of a spin–orbit interaction, and a (non-Markovian) spin bath constituted by the spins of the nuclei in the quantum dot that interact with the electron spin via the hyperfine interaction. In a superconducting qubit, decoherence takes place as a result of fluctuations in the control parameters, such as bias currents, applied flux and bias voltages, and via losses in the dissipative circuit elements.
The decoherence dynamics of two charge qubits in a double quantum dot is investigated theoretically. We consider the quantum dynamics of two interacting electrons in a vertically coupled quantum dot driven by an external electric field. We derive the equations of motion for the density matrix, in which the presence of an electron confined in the double dot represents one qubit. A Markovian approach to the dynamical evolution of the reduced density matrix is adopted. We evaluate the concurrence of two qubits in order to study the effect of acoustic phonons on the entanglement. We also show that the disentanglement effect depends on the double dot parameters and increases with the temperature.