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arXiv:1403.1743 · Physical Review B

Continuous Mott transition in a two-dimensional Hubbard model

Yuki Yanagi, Kazuo Ueda

Published Aug 11, 2014• 10 citations
arXivHTMLPDF

Abstract

We investigate a nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half filling within the eight-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures of a first-order transition, a continuous Mott transition, takes place in a certain range of parameters. The nature of the continuous Mott transition is merely a Lifshitz transition driven by the on-site Coulomb interaction. The renormalized matrix elements of hoppings and the spin-spin correlation functions reveal that the physics of this transition is a strong enhancement of the dimerization due to the nonlocal effects of the electron-electron interaction.

DOI
10.1103/physrevb.90.085113

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We investigate a nonmagnetic metal-insulator transition in the 1/5-depleted square lattice Hubbard model at half filling within the eight-site cellular dynamical mean field theory. We find that a metal-insulator transition without any signatures of a first-order transition, a continuous Mott transition, takes place in a certain range of parameters. The nature of the continuous Mott transition is merely a Lifshitz transition driven by the on-site Coulomb interaction. The renormalized matrix elements of hoppings and the spin-spin correlation functions reveal that the physics of this transition is a strong enhancement of the dimerization due to the nonlocal effects of the electron-electron interaction.
We study the relationship between the pseudogap and Fermi-surface topology in the two-dimensional Hubbard model by means of the cellular dynamical mean-field theory. We find two possible mean-field metallic solutions on a broad range of interactions, doping, and frustration: a conventional renormalized metal and an unconventional pseudogap metal. At half filling, the conventional metal is more stable and displays an interaction-driven Mott metal-insulator transition. However, for large interactions and small doping, a region that is relevant for cuprates, the pseudogap phase becomes the ground state. By increasing doping, we show that a first-order transition from the pseudogap to the conventional metal is tied to a change of the Fermi surface from hole- to electronlike, unveiling a correlation-driven mechanism for a Lifshitz transition. This explains the puzzling link between the pseudogap phase and Fermi surface topology that has been pointed out in recent experiments.
Experiments on layered materials call for a study of the influence of short-range spin correlations on the Mott transition. To this end, we solve the cellular dynamical mean-field equations for the Hubbard model on a plaquette with continuous-time quantum Monte Carlo calculations. The normal-state phase diagram as a function of temperature T, interaction strength U, and filling n reveals that upon increasing n towards the insulator, there is a surface of first-order transition between two metals at nonzero doping. For T above the critical end line there is a maximum in scattering rate.
We study by dynamical mean-field theory the ground state of a quarter-filled Hubbard model of two bands with different bandwidths. At half-filling, this model is known to display an orbital selective Mott transition, with the narrower band undergoing Mott localization while the wider one being still itinerant. At quarter-filling, the physical behavior is different and to some extent reversed. The interaction generates an effective crystal field splitting, absent in the Hamiltonian, that tends to empty the narrower band in favor of the wider one, which also become more correlated than the former at odds with the orbital selective paradigm. Upon increasing the interaction, the depletion of the narrower band can continue till it empties completely and the system undergoes a topological Lifshitz transition into a half-filled single-band metal that eventually turns insulating. Alternatively, when the two bandwidths are not too different, a first order Mott transition intervenes before the Lifshitz's one. The properties of the Mott insulator are significantly affected by the interplay between spin and orbital degrees of freedom.
Abstract We consider the extended Hubbard model on a two-dimensional square lattice at half-filling. The model is investigated using the strong coupling diagram technique. We sum infinite series of ladder diagrams allowing for full-scale charge and spin fluctuations and the actual short-range antiferromagnetic order for nonzero temperatures. In agreement with earlier results, we find the first-order phase transition in the charge subsystem occurring at v = v c ≳ U/4 with v and U the intersite and on-site Coulomb repulsion constants. The transition reveals itself in an abrupt sign change of a sharp maximum in the zero-frequency charge susceptibility at the corner of the Brillouin. States arising at the transition have alternating deviations of electron occupations from the mean value on neighboring sites. Due to fluctuations, these alternating occupation deviations have short-range order. For the considered parameters, such behavior is found for U ≲ 5t with t the hopping constant. For the insulating case U ≳ 6t, in which the transition is not observed, we find a continuous growth of the Mott gap with v. The evolution of the electron density of states with increasing v is also considered.
We address the nature of the Mott transition in the Hubbard model at half-filling using cluster dynamical mean field theory (DMFT). We compare cluster-DMFT results with those of single-site DMFT. We show that inclusion of the short-range correlations on top of the on-site correlations does not change the order of the transition between the paramagnetic metal and the paramagnetic Mott insulator, which remains first order. However, the short range correlations reduce substantially the critical U and modify the shape of the transition lines. Moreover, they lead to very different physical properties of the metallic and insulating phases near the transition point. Approaching the transition from the metallic side, we find an anomalous metallic state with very low coherence scale. The insulating state is characterized by the narrow Mott gap with pronounced peaks at the gap edge.
For doped two-dimensional Mott insulators in their normal state, the challenge is to understand the evolution from a conventional metal at high doping to a strongly correlated metal near the Mott insulator at zero doping. To this end, we solve the cellular dynamical mean-field equations for the two-dimensional Hubbard model using a plaquette as the reference quantum impurity model and continuous-time quantum Monte Carlo method as impurity solver. The normal-state phase diagram as a function of interaction strength UUU, temperature TTT, and filling nnn shows that, upon increasing nnn toward the Mott insulator, there is a surface of first-order transition between two metals at nonzero doping. That surface ends at a finite temperature critical line originating at the half-filled Mott critical point. Associated with this transition, there is a maximum in scattering rate as well as thermodynamic signatures. These findings suggest a new scenario for the normal-state phase diagram of the high temperature superconductors. The criticality surmised in these systems can originate not from a T === 0 quantum critical point, nor from the proximity of a long-range ordered phase, but from a low temperature transition between two types of metals at finite doping. The influence of Mott physics therefore extends well beyond half-filling.