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arXiv:1312.0367

Disorder-Driven Superconductor-Insulator Transition in d-Wave Superconducting Ultrathin Films

Long He, Jian Sun, Yun Young Song

Published Dec 2, 2013• 0 citations
arXivHTMLPDF

Abstract

We study the superconductor-insulator transition (SIT) in $d$-wave superconducting ultrathin films. By means of the kernel polynomial method, the Bogoliubov-de Gennes equations are solved for square lattices with up to $360\times 360$ unit cells self-consistently, making it possible to observe fully the nanoscale spatial fluctuations of the superconducting order parameters and discriminate accurately the localized quasiparticle states from the extended ones by the lattice-size scaling of the generalized inverse participation ratio. It is shown that Anderson localization can not entirely inhibit the occurrence of the local superconductivity in strongly-disordered $d$-wave superconductors. Separated by an insulating 'sea' completely, a few isolated superconducting 'islands' with significant enhancement of the local superconducting order parameters can survive across the SIT. The disorder-driven SIT, therefore, is a transition from a $d$-wave superconductor to a Bose insulator which consists of localized Cooper pairs. Unlike an $s$-wave superconductor which presents a robust single-particle gap across the SIT, the optical conductivity of a $d$-wave superconductor reveals a gapless insulating phase, where the SIT can be detected by observing the disappearance of the Drude weight with the increasing disorder.

DOI
10.48550/arxiv.1312.0367

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We study the superconductor-insulator transition (SIT) in ddd-wave superconducting ultrathin films. By means of the kernel polynomial method, the Bogoliubov-de Gennes equations are solved for square lattices with up to 360×360360\times 360360×360 unit cells self-consistently, making it possible to observe fully the nanoscale spatial fluctuations of the superconducting order parameters and discriminate accurately the localized quasiparticle states from the extended ones by the lattice-size scaling of the generalized inverse participation ratio. It is shown that Anderson localization can not entirely inhibit the occurrence of the local superconductivity in strongly-disordered ddd-wave superconductors. Separated by an insulating 'sea' completely, a few isolated superconducting 'islands' with significant enhancement of the local superconducting order parameters can survive across the SIT. The disorder-driven SIT, therefore, is a transition from a ddd-wave superconductor to a Bose insulator which consists of localized Cooper pairs. Unlike an sss-wave superconductor which presents a robust single-particle gap across the SIT, the optical conductivity of a ddd-wave superconductor reveals a gapless insulating phase, where the SIT can be detected by observing the disappearance of the Drude weight with the increasing disorder.
We study the effect of disorder on the superconductor-insulator transition in an inhomogeneous d-wave superconductor using the kernel polynomial method. As the Bogoliubov-de Gennes equations of the two-dimensional square lattice are solved self-consistently for the cases with more than 100000 unit cells, it is possible to observe the spatial fluctuations of the superconducting order parameters at the nanoscale. We find that strong spatial fluctuation of the superconducting order parameters can be introduced by disorder, and some superconducting specific order parameters are even enhanced. Moreover, we find that some isolated superconducting “islands” can survive the strong disorder, giving a boson insulator with some localized Cooper pairs. Our numerical calculations predict the existence of two sequential transitions with the increasing disorder strength: a d-wave to s-wave superconductor transition, and then an s-wave superconductor to insulator transition. The possibility of the appearance of a metallic phase between the superconducting and insulating phases is excluded by performing the lattice-size scaling of the generalized inverse participation ratio. In addition, we also discuss the effect of disorder on the optical conductivity of the d-wave superconductors.
We show, using a Bogoliubov-de Gennes (BdG) mean field theory, that the local pairing amplitude Δ(r) becomes highly inhomogeneous with increasing disorder in an s-wave superconductor. The probability distribution P(Δ) is peaked about the BCS value at low disorder, but with increasing disorder, progressively develops into a broad distribution with significant build up of weight near Δ≈0. At high disorder, the system is found to form superconducting "islands" separated by a non-superconducting sea. Surprisingly, a finite energy gap persists into the highly disordered state in spite of many sites having negligible pairing amplitude and is understood in detail within the BdG framework. Once the pairing amplitude becomes inhomogeneous, the role of quantum phase fluctuations becomes crucial in driving a superconductor-insulator transition at a critical disorder. The insulator is unusual as it has a finite gap for all disorder strengths in marked contrast to the Anderson insulator in non-interacting systems. We treat the phase fluctuations within a self consistent harmonic approximation and obtain the superfluid stiffness as a function of disorder, which agrees well with our earlier quantum Monte Carlo studies.
Competition between superconductivity and disorder plays an essential role in understanding the metal-insulator transition. Based on the Bogoliubov-de Gennes framework, we studied an 2D s-wave fermionic optical lattice system with both spin- orbit coupling and disorder are presented. We find that, with the increase of the strength of disorder, the mean superconducting order parameter will vanish while the energy gap will persist, which indicates that the system undergoes a transition from a superconducting state to a gapped insulating state. This can be confirmed by calculating the inverse participation ratio. We also find that, if the strength of disorder is small, the superconducting order parameter and the energy gap will decrease if we increase the strength of spin-orbit coupling and Zeeman field. In the large disorder limits, the increase of the strength of spin- orbit coupling will increase the mean superconducting order parameter. This phenomenon shows that the system is more insensitive to disorder if the spin-orbit coupling is presented. Numerical computing also shows that the whole system breaks up into several superconducting islands instead of being superconductive.
Competition between superconductivity and disorder plays an essential role in understanding the metal-insulator transition. Based on the Bogoliubov-de Gennes framework, we studied an 2D s-wave fermionic optical lattice system with both spin- orbit coupling and disorder are presented. We find that, with the increase of the strength of disorder, the mean superconducting order parameter will vanish while the energy gap will persist, which indicates that the system undergoes a transition from a superconducting state to a gapped insulating state. This can be confirmed by calculating the inverse participation ratio. We also find that, if the strength of disorder is small, the superconducting order parameter and the energy gap will decrease if we increase the strength of spin-orbit coupling and Zeeman field. In the large disorder limits, the increase of the strength of spin- orbit coupling will increase the mean superconducting order parameter. This phenomenon shows that the system is more insensitive to disorder if the spin-orbit coupling is presented. Numerical computing also shows that the whole system breaks up into several superconducting islands instead of being superconductive.
It is well known that the metal-insulator transition in two dimensions for non-interacting fermions takes place at infinitesimal disorder. In contrast, the superconductor-to-insulator transition takes place at a finite critical disorder (on the order of Vc ~ 2t), where V is the typical width of the distribution of random site energies and t is the hopping scale. In this article we compare the localization/delocalization properties of one and two particles. Whereas the metal-insulator transition is a consequence of single-particle Anderson localization, the superconductor-insulator transition (SIT) is due to pair localization – or, alternatively, fluctuations of the phase conjugate to pair density. The central question we address is how superconductivity emerges from localized single-particle states. We address this question using inhomogeneous mean field theory and quantum Monte Carlo techniques and make several testable predictions for local spectroscopic probes across the SIT. We show that with increasing disorder, the system forms superconducting blobs on the scale of the coherence length embedded in an insulating matrix. In the superconducting state, the phases on the different blobs are coherent across the system whereas in the insulator long-range phase coherence is disrupted by quantum fluctuations. As a consequence of this emergent granularity, we show that the single-particle energy gap in the density of states survives across the transition, but coherence peaks exist only in the superconductor. A characteristic pseudogap persists above the critical disorder and critical temperature, in contrast to conventional theories. Surprisingly, the insulator has a two-particle gap scale that vanishes at the SIT despite a robust single-particle gap.
We calculate the dynamical conductivity σðωÞ and the bosonic (pair) spectral function PðωÞ from quantum Monte Carlo simulations across clean and disorder-driven superconductor-insulator transitions (SITs).We identify characteristic energy scales in the superconducting and insulating phases that vanish at the transition due to enhanced quantum fluctuations, despite the persistence of a robust fermionic gap across the SIT.Disorder leads to enhanced absorption in σðωÞ at low frequencies compared to the SIT in a clean system.Disorder also expands the quantum critical region, due to a change in the universality class, with an underlying T ¼ 0 critical point with a universal low-frequency conductivity σ Ã ≃ 0.5ð4e 2 =hÞ.