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arXiv:1305.0894 · Physical Review A

Band-to-Mott-insulator transformations in four-component alkali-metal fermions at half-filling

J. Jaramillo, Sebastian Greschner, T. Vekua

Published Oct 11, 2013• 7 citations
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Abstract

Under the influence of an external magnetic field and spin-changing collisions, the band insulator state of one-dimensional $s$-wave repulsively interacting four-component fermions at half-filling transforms into Mott insulator states with a spontaneously doubled unit cell: a dimerized state for shallow lattices and a N\'eel state for deep lattices via an intermediate topological state. These Mott insulator phases could be of special interest for experiments as they can be reached starting from band insulator state and changing magnetic field adiabatically.

DOI
10.1103/physreva.88.043616

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Under the influence of an external magnetic field and spin-changing collisions, the band insulator state of one-dimensional sss-wave repulsively interacting four-component fermions at half-filling transforms into Mott insulator states with a spontaneously doubled unit cell: a dimerized state for shallow lattices and a N'eel state for deep lattices via an intermediate topological state. These Mott insulator phases could be of special interest for experiments as they can be reached starting from band insulator state and changing magnetic field adiabatically.
We study the half-filled Hubbard model on a one-parameter family of vortex-full square lattices ranging from the isotropic case to weakly coupled Hubbard dimers. The ground-state phase diagram consists of four phases: A semimetal and a band insulator which are connected to the weak-coupling limit, and a magnetically ordered N\'eel phase and a valence bond solid (VBS) which are linked to the strong-coupling Mott limit. The phase diagram is obtained by quantum Monte Carlo (QMC) and continuous unitary transformations (CUTs). The CUT is performed in a two-step process: Nonperturbative graph-based CUTs are used in the Mott insulating phase to integrate out charge fluctuations. The resulting effective spin model is tackled by perturbative CUTs about the isolated dimer limit yielding the breakdown of the VBS by triplon condensation. We find three scenarios when varying the interaction for a fixed anisotropy of hopping amplitudes: (i) one direct phase transition from N\'eel to semimetal, (ii) two phase transitions VBS to N\'eel and N\'eel to semimetal, or (iii) a smooth crossover from VBS to the band insulator. Our results are consistent with the absence of spin-liquid phases in the whole phase diagram.
We consider the effect of a local interatomic repulsion on synthetic heterostructures where a discrete synthetic dimension is created by Raman processes on top of SU(N) S U ( N ) -symmetric two-dimensional lattice systems. At a filling of one fermion per site, increasing the interaction strength, the system is driven towards a Mott state which is adiabatically connected to a band insulator. The chiral currents associated with the synthetic magnetic field increase all the way to the Mott transition, where they reach the maximum value, and they remain finite in the whole insulating state. The transition towards the Mott-band insulator is associated with the opening of a gap within the low-energy quasiparticle peak, while a mean-field picture is recovered deep in the insulating state.
Metal-insulator transitions are studied within a three-component Falicov-Kimball model, which mimics a mixture of one-component and two-component fermionic particles with local repulsive interactions in optical lattices. Within the model, the two-component fermionic particles are able to hop in the lattice, while the one-component fermionic particles are localized. The model is studied by using the dynamical mean-field theory with exact diagonalization. Its homogeneous solutions establish Mott transitions for both commensurate and incommensurate fillings between one-third and two-thirds. At commensurate one-third and two-thirds fillings, the Mott transition occurs for any density of hopping particles, while at incommensurate fillings, the Mott transition can occur only for density one-half of hopping particles. At half-filling, depending on the repulsive interactions, the reentrant effect of the Mott insulator is observed. As increasing local interaction of hopping particles, the first insulator-metal transition is continuous, whereas the second metal-insulator transition is discontinuous. The second metal-insulator transition crosses a finite region where both metallic and insulating phase coexist. At third-filling, the Mott transition is established only for strong repulsive interactions. A phase separation occurs together with the phase transition.
An unusual metallic phase is argued to develop in the one-dimensional ionic Hubbard model, at half-filling and zero magnetization, at intermediate electron-electron repulsion UUU when second-neighbors hopping is allowed and tuned close to a topological Lifshitz transition (connected with a change of the Fermi surface in the noninteracting system). The metallic state lies between a band insulator phase at low repulsion and a correlated (Mott-like) insulator phase at high repulsion. In approaching the latter, the model supports short-range antiferromagnetic order and spontaneous dimerization of both bond charge and nearest-neighbor antiferromagnetic correlations. A combination of mean-field and effective-field theory (bosonization) provides an analytical understanding of the physical processes underlying the argued phase transitions. The ground and low-energy excited states of finite-length chains are explored by density-matrix renormalization-group (DMRG) calculations, providing numerical evidence for the intermediate gapless phase. Such finite systems are attainable by cold atoms in optical lattices for a wide range of the parameter UUU.
The ground-state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean-field theory. For weak to intermediate values of Coulomb repulsion UUU, the system undergoes a transition from a Mott-insulating phase to a metallic phase and then onto a band-insulating phase as the interlayer hopping is increased. In the strong-coupling case, the model exhibits a direct crossover from a Mott-insulating phase to a band-insulating phase. These results are robust with respect to the presence or absence of magnetic order.
We investigate the phase diagram of spinless fermions with nearest- and next-nearest-neighbor density-density interactions on the honeycomb lattice at half-filling. Using exact diagonalization techniques of the full Hamiltonian and constrained subspaces, combined with a careful choice of finite-size clusters, we determine the different charge orderings that occur for large interactions. In this regime, we find a two-sublattice N\'eel-like state, a charge modulated state with a tripling of the unit cell, a zigzag phase, and a charge ordered state with a 12-site unit cell we call N\'eel domain wall crystal, as well as a region of phase separation for attractive interactions. A sizable region of the phase diagram is classically degenerate, but it remains unclear whether an order-by-disorder mechanism will lift the degeneracy. For intermediate repulsion, we find evidence for a Kekul\'e or plaquette bond-order wave phase. We also investigate the possibility of a spontaneous Chern insulator phase (dubbed topological Mott insulator), as previously put forward by several mean-field studies. Although we are unable to detect convincing evidence for this phase based on energy spectra and order parameters, we find an enhancement of current-current correlations with the expected spatial structure compared to the noninteracting situation. While for the studied $t\ensuremath{-}{V}_{1}\ensuremath{-}{V}_{2}$ model, the phase transition to the putative topological Mott insulator is preempted by the phase transitions to the various ordered states, our findings might hint at the possibility for a topological Mott insulator in an enlarged Hamiltonian parameter space, where the competing phases are suppressed.