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arXiv:1212.3299 · Physical Review B

Polaronic model of two-level systems in amorphous solids

Kartiek Agarwal, Ivar Martin, Mikhail D. Lukin, Eugene Demler

Published Apr 3, 2013• 59 citations

Abstract

While two-level systems (TLSs) are ubiqitous in solid state systems, microscopic understanding of their nature remains an outstanding problem. Conflicting phenomenological models are used to describe TLSs in seemingly similar materials when probed with different experimental techniques. Specifically, bulk measurements in amorphous solids have been interpreted using the model of a tunneling atom or group of atoms, whereas TLSs observed in the insulating barriers of Josephson junction qubits have been understood in terms of tunneling of individual electrons. Motivated by recent experiments studying TLSs in Josephson junctions, especially the effects of elastic strain on TLS properties, we analyze the interaction of the electronic TLS with phonons. We demonstrate that strong polaronic effects lead to dramatic changes in TLS properties. Our model gives a quantitative understanding of the TLS relaxation and dephasing as probed in Josephson junction qubits, while providing an alternative interpretation of bulk experiments. We demonstrate that a model of polaron dressed electronic TLS leads to estimates for the density and distribution of parameters of TLSs consistent with bulk experiments in amorphous solids. This model explains such surprising observations of recent experiments as the existence of minima in the energy of some TLSs as a function of strain and makes concrete predictions for the character of TLS dephasing near such minima. We argue that better understanding of the microscopic nature of TLSs can be used to improve properties of quantum devices, from an enhancement of relaxation time of TLSs to creating new types of strongly interacting optomechanical systems.

DOI: 10.1103/physrevb.87.144201

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While two-level systems (TLSs) are ubiqitous in solid state systems, microscopic understanding of their nature remains an outstanding problem. Conflicting phenomenological models are used to describe TLSs in seemingly similar materials when probed with different experimental techniques. Specifically, bulk measurements in amorphous solids have been interpreted using the model of a tunneling atom or group of atoms, whereas TLSs observed in the insulating barriers of Josephson junction qubits have been understood in terms of tunneling of individual electrons. Motivated by recent experiments studying TLSs in Josephson junctions, especially the effects of elastic strain on TLS properties, we analyze the interaction of the electronic TLS with phonons. We demonstrate that strong polaronic effects lead to dramatic changes in TLS properties. Our model gives a quantitative understanding of the TLS relaxation and dephasing as probed in Josephson junction qubits, while providing an alternative interpretation of bulk experiments. We demonstrate that a model of polaron dressed electronic TLS leads to estimates for the density and distribution of parameters of TLSs consistent with bulk experiments in amorphous solids. This model explains such surprising observations of recent experiments as the existence of minima in the energy of some TLSs as a function of strain and makes concrete predictions for the character of TLS dephasing near such minima. We argue that better understanding of the microscopic nature of TLSs can be used to improve properties of quantum devices, from an enhancement of relaxation time of TLSs to creating new types of strongly interacting optomechanical systems.

Amorphous solids show surprisingly universal behaviour at low temperatures. The prevailing wisdom is that this can be explained by the existence of two-state defects within the material. The so-called standard tunneling model has become the established framework to explain these results, yet it still leaves the central question essentially unanswered-what are these two-level defects (TLS)? This question has recently taken on a new urgency with the rise of superconducting circuits in quantum computing, circuit quantum electrodynamics, magnetometry, electrometry and metrology. Superconducting circuits made from aluminium or niobium are fundamentally limited by losses due to TLS within the amorphous oxide layers encasing them. On the other hand, these circuits also provide a novel and effective method for studying the very defects which limit their operation. We can now go beyond ensemble measurements and probe individual defects-observing the quantum nature of their dynamics and studying their formation, their behaviour as a function of applied field, strain, temperature and other properties. This article reviews the plethora of recent experimental results in this area and discusses the various theoretical models which have been used to describe the observations. In doing so, it summarises the current approaches to solving this fundamentally important problem in solid-state physics.

Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.

Recent progress with microfabricated quantum devices has revealed that an ubiquitous source of noise originates in tunneling material defects that give rise to a sparse bath of parasitic two-level systems (TLSs). For superconducting qubits, TLSs residing on electrode surfaces and in tunnel junctions account for a major part of decoherence and thus pose a serious roadblock to the realization of solid-state quantum processors. Here, we utilize a superconducting qubit to explore the quantum state evolution of coherently operated TLSs in order to shed new light on their individual properties and environmental interactions. We identify a frequency-dependence of TLS energy relaxation rates that can be explained by a coupling to phononic modes rather than by anticipated mutual TLS interactions. Most investigated TLSs are found to be free of pure dephasing at their energy degeneracy points, around which their Ramsey and spin-echo dephasing rates scale linearly and quadratically with asymmetry energy, respectively. We provide an explanation based on the standard tunneling model, and identify interaction with incoherent low-frequency (thermal) TLSs as the major mechanism of the pure dephasing in coherent high-frequency TLS.

Quantum two-level systems (TLSs) commonly found at low temperature in amorphous and disordered materials are responsible for decoherence in superconducting Josephson junction qubits particularly because they absorb energy of coherent qubit oscillations in the microwave frequency range. In planar Josephson resonators with oxide interfaces this absorption is characterized by an anomalously weak loss tangent dependence on the field in the non-linear regime that conflicts with the theoretical expectations and the observations in amorphous dielectrics. It was recently suggested that this anomalous absorption is due to TLS dynamic interactions. Here we show that such interactions cannot lead to the observed loss-tangent field dependence and suggest the alternative explanation assuming that TLS dipole moments

p

are distributed according to the specific power law

P(p) \propto 1/p^{3-η}

(

0\leq η<1

). This assumption, indeed, results in the observed loss tangent behavior. The hypothesis of a power law distribution is supported both by the recent measurements of individual TLS dipole moments and the theoretical model of TLS formation due to the long-range dipole-dipole interaction, thus connecting the anomalous absorption with the possible solution of the long-standing problem of the nature of TLSs.

Quantum two-level systems (TLSs) intrinsic to glasses induce decoherence in many modern quantum devices, such as superconducting qubits. Although the low-temperature physics of these TLSs is usually well-explained by a phenomenological standard tunneling model of independent TLSs, the nature of these TLSs, as well as their behavior out of equilibrium and at high energies above 1 K, remain inconclusive. Here we measure the non-equilibrium dielectric loss of TLSs in amorphous silicon using a superconducting resonator, where energies of TLSs are varied in time using a swept electric field. Our results show the existence of two distinct ensembles of TLSs, interacting weakly and strongly with phonons, where the latter also possesses anomalously large electric dipole moment. These results may shed new light on the low temperature characteristics of amorphous solids, and hold implications to experiments and applications in quantum devices using time-varying electric fields.

Abstract The proper functioning of some micro-fabricated novel quantum devices, such as superconducting resonators and qubits, is severely affected by the presence of parasitic structural material defects known as tunneling two-level-systems (TLS). Recent experiments have reported unambiguous evidence of the strong interaction between individual (coherent) TLS using strain-assisted spectroscopy. This work provides an alternative and simple theoretical insight that illustrates how to obtain the spectral response of such strongly interacting defects residing inside the amorphous tunnel barrier of a qubit’s Josephson junction. Moreover, the corresponding spectral signatures obtained here may serve to quickly and efficiently elucidate the actual state of these interacting TLS in experiments based on strain or electric-field spectroscopy.