A central aim of quantum information processing is the efficient entanglement of multiple stationary quantum memories via photons. Among solid-state systems, the nitrogen-vacancy centre in diamond has emerged as an excellent optically addressable memory with second-scale electron spin coherence times. Recently, quantum entanglement and teleportation have been shown between two nitrogen-vacancy memories, but scaling to larger networks requires more efficient spin-photon interfaces such as optical resonators. Here we report such nitrogen-vacancy-nanocavity systems in the strong Purcell regime with optical quality factors approaching 10,000 and electron spin coherence times exceeding 200 μs using a silicon hard-mask fabrication process. This spin-photon interface is integrated with on-chip microwave striplines for coherent spin control, providing an efficient quantum memory for quantum networks. Nitrogen-vacancy centres in diamond have established themselves as excellent candidates for solid-state quantum memories due to their optical addressability and long coherence times. Here, the authors report on a diamond-nanocavity system with improved spin-photon interface performances.
We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a na\"{\i}ve implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100--1000 times that of the nuclear spin quantum computer with the ratio
T2∕Tops approaching the
106 level.
Solid-state spin defects are a promising platform for quantum networks. A key requirement is to combine long ground-state spin-coherence times with a coherent optical transition for spin-photon entanglement. Here, we investigate the spin and optical coherence of single nitrogen-vacancy (NV) centres in (111)-grown isotopically engineered diamond. Our diamond-growth process yields a precisely controlled
13C concentration and low-ppb nitrogen concentrations. Combined with the mitigation of 50 Hz noise using a real-time feedforward scheme and tailored decoupling sequences, this enables record defect-electron-spin coherence times of
T2=6.8(1) ms for a Hahn echo and of
T2DD=11.2(8) s under dynamical decoupling. In addition, we observe coherent optical transitions with a near-lifetime-limited homogeneous linewidth of 16.9(4) MHz and characterize the spectral diffusion dynamics. These results provide new avenues to investigate the incorporation of impurities in diamond and new opportunities for improved spin-qubit control for quantum networks and other quantum technologies.