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arXiv:1211.2885 · Scientific Reports

A monolithically integrated polarization entangled photon pair source on a silicon chip

Nobuyuki Matsuda, Hanna Le Jeannic, Hiroshi Fukuda, Tai Tsuchizawa, William J. Munro, Kaoru Shimizu, Koji Yamada, 康弘 都倉, Hiroki Takesue

Published Nov 12, 2012• 167 citations
arXivHTMLPDF

Abstract

Integrated photonic circuits are one of the most promising platforms for large-scale photonic quantum information systems due to their small physical size and stable interferometers with near-perfect lateral-mode overlaps. Since many quantum information protocols are based on qubits defined by the polarization of photons, we must develop integrated building blocks to generate, manipulate, and measure the polarization-encoded quantum state on a chip. The generation unit is particularly important. Here we show the first integrated polarization-entangled photon pair source on a chip. We have implemented the source as a simple and stable silicon-on-insulator photonic circuit that generates an entangled state with 91 ± 2% fidelity. The source is equipped with versatile interfaces for silica-on-silicon or other types of waveguide platforms that accommodate the polarization manipulation and projection devices as well as pump light sources. Therefore, we are ready for the full-scale implementation of photonic quantum information systems on a chip.

DOI
10.1038/srep00817

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Developing a high-quality, bright source of polarization-entangled photon pairs on CMOS-compatible integrated platforms, such as silicon or silicon nitride, remains a significant challenge. Here, a novel silicon chip-based nonlinear Sagnac interferometer, which mainly integrates a bidirectionally pumped microring resonator with a polarization-splitting rotator, was proposed to generate polarization-entangled photon pairs. By pumping the system with a pulsed laser at 1550 nm and a power of 78 μW, polarization-entangled photon pairs in the telecom C-band were produced through spontaneous four-wave mixing, achieving a state-of-the-art brightness of 1.6 × 107 pairs s−1 GHz−1 mW−2. Using an off-chip polarization analyzer, the visibility of polarization-correlation interference fringe was measured to be 96.6%. Quantum state tomography revealed a fidelity of 0.958 for the maximally entangled state produced by the source. These exceptional performance metrics, combined with the integrability of the device, make it highly suitable for advanced quantum applications, particularly in multi-user entanglement-based quantum communication networks.
Silicon quantum photonics promises to take quantum optics to the large scale, where single photons carry the quantum information which can accelerate difficult computational problems, provide perfectly secure communication, or allow high-accuracy measurements. The silicon photonics platform offers miniature, high-yield, and high-performance photonics which are integrable with CMOS electronics and telecommunications-band optics. To date, only non-scalable photon-pair sources, based on spontaneous four-wave mixing (SFWM) in straight silicon waveguides have been shown to interfere [1]. Until now, single-photon experiments in silicon [2] have exclusively used an off-chip apparatus, such as a silica arrayed waveguide grating, to control and manipulate photon frequency. We present a silicon-on-insulator quantum photonic device (Fig. 1a) able to generate and analyse two maximally entangled qubits. We use this device to demonstrate high-visibility quantum interferencebetween resonant SFWM sources (analogous to [1]), phase-stable frequency-selection, and quantum state tomography. We varied the phase  to obtain the fringes shown in Fig. 1b, with a visibility of 96.8%. This high visibility indicates that the two microring sources are substantially identical. We setup the entangled state via the on-chip 17-dB extinction filters, and used quantum state tomography to analyse it (Fig. 1c). We measured a fidelity of 0.8. This is the first time an entangled state of photonic qubits has been both generated and analysed on-chip, and this generation has been done in a way which is scalable to larger photon number. These results represent a new step towards fully silicon-integrated quantum photonics.