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arXiv:1210.4415 · Physical Review Letters

Quantum Phase Transition in a Clean Two-Dimensional Electron System

T. R. Kirkpatrick, D. Belitz

Published Jan 15, 2013• 7 citations
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Abstract

A quantum phase transition that was recently observed in a high-mobility silicon metal-oxide-semiconductor field-effect transistor is analyzed in terms of a scaling theory. The most striking characteristic of the transition is a divergence of the thermopower, according to an inverse linear law, as a critical value of the electron density is approached. A scaling description of this transition yields predictions about the critical behavior of other observables, e.g., the specific heat. We also explore the possibility that this transition realizes a recently predicted transition from a Fermi liquid to a non-Fermi-liquid state.

DOI
10.1103/physrevlett.110.035702

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A quantum phase transition that was recently observed in a high-mobility silicon metal-oxide-semiconductor field-effect transistor is analyzed in terms of a scaling theory. The most striking characteristic of the transition is a divergence of the thermopower, according to an inverse linear law, as a critical value of the electron density is approached. A scaling description of this transition yields predictions about the critical behavior of other observables, e.g., the specific heat. We also explore the possibility that this transition realizes a recently predicted transition from a Fermi liquid to a non-Fermi-liquid state.
We develop a theory for a generic instability of a Fermi liquid in dimension d>1 against the formation of a Luttinger-liquid-like state. The density of states at the Fermi level is the order parameter for the ensuing quantum phase transition, which is driven by the effective interaction strength. A scaling theory in conjunction with an effective field theory for clean electrons is used to obtain the critical behavior of observables. In the Fermi-liquid phase the order-parameter susceptibility, which is measurable by tunneling, is predicted to diverge for 1<d<3.
The in-plane magnetoconductance of the strongly interacting two-dimensional electron system in a silicon MOSFET (metal-oxide-semiconductor-field-effect transistor) exhibits an unmistakable kink at a well-defined electron density, nk{n}_{k}nk​. The kink at nk{n}_{k}nk​ is near, but not at the critical density nc{n}_{c}nc​ determined from resistivity measurements, and the density at which nk{n}_{k}nk​ occurs varies with temperature. These features are inconsistent with expectations for a quantum phase transition. We suggest instead that this is a percolation transition and present a detailed model based on the formation of a mixed insulating and metallic phase within which a metal-insulator transition takes place by percolation.
This chapter focuses on experimental results obtained in low-disordered strongly interacting two-dimensional (2D) electron systems; in particular in (100)-silicon metal-oxide-semiconductor field-effect transistors (MOSFET). It describes the additional confirmation in favor of zero-temperature zero-field metal-insulator transition is provided by magnetic and thermopower measurements. The chapter argues that the metal-insulator transition in silicon samples with very low level of disorder is driven by interactions. In a low-disordered 2D electron system in silicon MOSFETs, the resistivity at a certain "critical" electron density shows virtually no temperature dependence over a wide range of temperatures. In 2000, it was experimentally found that the ratio between the spin and the cyclotron splittings in silicon MOSFETs strongly increases at low electron densities. The strong enhancement of the spin susceptibility has indicated that at low electron densities, the system behaves well beyond the weakly interacting Fermi liquid.
We show that there can be no direct first-order transition between a Fermi liquid and an insulating electronic (Wigner) crystalline phase in a clean two-dimensional electron gas in a metal-oxide-semiconductor field-effect transistor (MOSFET); rather, there must always exist intermediate ``microemulsion'' phases, and an accompanying sequence of continuous phase transitions. Among the intermediate phases which we find are a variety of electronic liquid crystalline phases, including stripe-related analogues of classical smectics and nematics. The existence of these phases can be established in the neighborhood of the phase boundaries on the basis of an asymptotically exact analysis, and reasonable estimates can be made concerning the ranges of electron densities and device geometries in which they exist. They likely occur in clean Si MOSFETs in the range of densities in which an ``apparent metal to insulator transition'' has been observed in existing experiments. We also point out that, in analogy with the Pomaranchuk effect in 3He^{3}\mathrm{He}3He, the Wigner crystalline phase has higher spin entropy than the liquid phase, leading to an increasing tendency to crystallization with increasing temperature.
The quantum phase transition observed experimentally in two-dimensional (2D) electron systems has been a subject of theoretical and experimental studies for almost 30 years. We suggest Gaussian approximation to the mean-field theory of the second-order phase transition to explain the experimental data. Our approach explains self-consistently the universal value of the critical exponent 3/2 (found after scaling measured resistivities on both sides of the transition as a function of temperature) as the result of the divergence of the correlation length when the electron density approaches the critical value. We also provide numerical evidence for the stretched exponential temperature dependence of the metallic phase's resistivities in a wide range of temperatures and show that it leads to correct qualitative results. Finally, we interpret the phase diagram on the density-temperature plane exhibiting the quantum critical point, quantum critical trajectory and two crossover lines. Our research presents a theoretical description of the seminal experimental results.
The metal–insulator transition (MIT) observed in a two-dimensional dilute electron liquid raises the question about the applicability of the scaling theory of disordered electrons, the approach pioneered by Phil Anderson and his collaborators,8 for the description of this transition. In this context, we review here the scaling theory of disordered electrons with electron–electron interactions. We start with the disordered Fermi liquid, and show how to adjust the microscopic Fermi-liquid theory to the presence of disorder. Then we describe the non-linear sigma model (NLSM) with interactions. This model has a direct relation with the disordered Fermi liquid, but can be more generally applicable, since it is a minimal model for disordered interacting electrons. The discussion is mostly about the general structure of the theory emphasizing the connection of the scaling parameters entering the NLSM with conservation laws. Next, we show that the MIT, as described by the NLSM with interactions, is a quantum phase transition and identify the parameters needed for the description of the kinetics and thermodynamics of the interacting liquid in the critical region of the transition. Finally, we discuss the MIT observed in Si -MOSFETs. We consider it as an example of the Anderson transition in the presence of the electron interactions. We demonstrate that the two-parameter RG equations, which treat disorder in the one-loop approximation but incorporate the full dependence on the interaction amplitudes, describe accurately the experimental data in Si -MOSFETs including the observed non-monotonic behavior of the resistance and its strong drop at low temperatures. The fact that this drop can be reproduced theoretically, together with the argument that Anderson localization should occur at strong disorder, justified the existence of the MIT within the scaling theory.