We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their relaxation and decoherence times, in particular as a function of level hybridization, temperature, magnetic field, spin orbit interaction, and detuning between the quantum dots, using Bloch-Redfield theory. We show that the magnetic field gradient, which is usually applied to operate the spin qubit, may reduce the relaxation time by more than an order of magnitude. Using this insight, we identify an optimal regime where the magnetic field gradient does not affect the relaxation time significantly, and we propose regimes of longest decay times. We take into account the effects of one-phonon and two-phonon processes and suggest how our theory can be tested experimentally. The spin lifetimes we find here for Si-based quantum dots are significantly longer than the ones reported for their GaAs counterparts.
We study theoretically the phonon-induced relaxation (
T1) and decoherence times (
T2) of singlet-triplet qubits in lateral GaAs double quantum dots (DQDs). When the DQD is biased, Pauli exclusion enables strong dephasing via two-phonon processes. This mechanism requires neither hyperfine nor spin-orbit interaction and yields ${T}_{2}\ensuremath{\ll}{T}_{1}$, in contrast to previous calculations of phonon-limited lifetimes. When the DQD is unbiased, we find ${T}_{2}\ensuremath{\simeq}2{T}_{1}$ and much longer lifetimes than in the biased DQD. For typical setups, the decoherence and relaxation rates due to one-phonon processes are proportional to the temperature
T, whereas the rates due to two-phonon processes reveal a transition from
T2 to higher powers as
T is decreased. Remarkably, both
T1 and
T2 exhibit a maximum when the external magnetic field is applied along a certain axis within the plane of the two-dimensional electron gas. We compare our results with recent experiments and analyze the dependence of
T1 and
T2 on system properties such as the detuning, the spin-orbit parameters, the hyperfine coupling, and the orientation of the DQD and the applied magnetic field with respect to the main crystallographic axes.
We study theoretically phonon-induced spin dynamics of two electrons confined in a self-assembled double quantum dot. We calculate the transition rates and time evolution of occupations for the spin-triplet and spin-singlet states. We characterize the relative importance of various relaxation channels, including two-phonon processes, as a function of the electric and magnetic fields. The simulations are based on a model combining the eight-band [Formula: see text] method and configuration-interaction approach. We show that the electron g-factor mismatch between the Zeeman doublets localized on different dots opens a relatively fast triplet-singlet phonon-assisted relaxation channel. We also demonstrate, that the relaxation near the triplet-singlet anticrossing is slowed down up to several orders of magnitude due to vanishing of some relaxation channels.
We study the singlet-triplet relaxation due to the spin-orbit coupling assisted by the electron-phonon scattering in two-electron SiGe/Si/SiGe double quantum dots in the presence of an external magnetic field in either Faraday or Voigt configuration. By explicitly including the electron-electron Coulomb interaction and the valley splitting induced by the interface scattering, we employ the exact-diagonalization method to obtain the energy spectra and the eigenstates. Then, we calculate the relaxation rates with the Fermi golden rule. We find that the transition rates can be effectively tuned by varying the external magnetic field and the interdot distance. Especially in the vicinity of the anticrossing point, the transition rates show intriguing features. We also investigate the electric-field dependence of the transition rates and find that the transition rates are almost independent of the electric field. This is of great importance in the spin manipulation, since the lifetime remains almost the same during the change of the qubit configuration from (1,1) to (2,0) by the electric field.
Since the development of microsized devices is moving forward at enormous speed, there is huge amount of new industrial opportunities. However such devices also require high precision and understanding of the operating of their constituent parts up to the quantum level. The device of the purely quantum nature being developed so far is quantum computer. However the physical realization of it is still not performed, as the requirements for it are very rigorous. \n \nIn the pioneering work by Loss and DiVincenzo it was suggested to use a spin of electron placed in a quantum dot as an information qubit. Following this work the study of electron or hole spin qubits developed. Both experimental and theoretical tools for studying them greatly advanced. \n \nIn the first part of the thesis we study the phonon-induced decoherence and relaxation of singlet-triplet qubits in the double quantum dots. First of all we consider AlGaAs/GaAs double quantum dots. The important result we present here is the strong dephasing that occurs at large detuning. This dephasing is due to two-phonon process that affects mainly singlet state of the qubit and consequently changes the splitting between singlet and triplet leading to dephasing. Remarkably at small detuning this dephasing process is suppressed and the decoherence time is by orders of magnitude longer than in case of large detuning and is mainly defined by one-phonon process. We also present the dependence of relaxation time and decoherence time on the strength of spin-orbit interaction and different directions of the system. Our results provide a deeper insight into the recently obtained experimental data. \n \nWe also studied Si/SiGe quantum dots as a potential candidate for a qubit. Apart from the absence of hyperfine interaction and bulk spin-orbit interaction in the isotopically purified
28Si, its electron-phonon interaction is different from GaAs that also leads to longer qubit lifetimes. We study
S-
T− qubit near the anticrossing of the basis states. This particular region is interesting due to possibilities in operating the qubit. We show that the type of singlet plays a crucial role, i.e. whether it is a singlet with each dot singly occupied or a singlet with only one dot doubly occupied. Depending on the type of singlet the qubit lifetimes change by several orders of magnitude. We also study the influence of a micromagnet, usually used in experiments to operate the qubit, on the relaxation time and decoherence time and present the regime where its effect is negligible. We suggest how to test experimentally our theory of one-phonon and two-phonon processes separately. We also show how the relaxation and decoherence time depend on different system parameters for
S-
T0 qubits. \n \nThe second part of the thesis is devoted to the other important constituent part of microsized devices, namely nanowires. We are interested in the dynamic of polarization of localized spins in the nanowires, as it can affect such important device characteristics as e.g. conductance. \n \nWe studied Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction-induced polarization in the nanowire in case when the voltage is applied to it. It was already proposed theoretically that in the ground state the localized spins in 1D systems align in a helix due to RKKY interaction. This polarization is still present until some critical temperature. The presence of such polarization acts as a spin filter for electrons, that most likely affects the conductance of the nanowire. Therefore we studied how this helical polarization changes when the voltage is applied. The key result is the appearance of the uniform polarization perpendicular to the helix plane, that occurs due to backscattering of electrons that is accompanied by flip-flop process with localized spins. When this uniform polarization is formed, the helix starts to rotate as a whole around the direction of the uniform polarization. We present the dependence of polarization of the localized spins on temperature and voltage. Remarkably the uniform polarization grows both with voltage and temperature in the given range of parameters. \n \nWe also considered the electron-induced relaxation of the nuclear spins. As the electron spins and nuclear spins interact via hyperfine interaction, the nuclear relaxation time reflects some properties of electron bath. Namely, we see a strong dependence of nuclear relaxation time on spin-orbit interaction strength. We present here the dependence of the nuclear relaxation time on the external magnetic field and chemical potential of the wire, that can be experimentally varied via gate. The dependences for the strong spin-orbit interaction and for the weak one are substantially different. Moreover, they have distinct peaks, that allow to get the value of spin-orbit interaction amplitude with the high precision.
We study electron-phonon interaction induced decoherence between two-electron singlet and triplet states in a semiconductor double quantum dot using a spin-boson model. We investigate the onset and time evolution of this dephasing, and study its dependence on quantum dot parameters such as dot size and double dot separations, as well as the host materials (GaAs and Si). At the short time limit, electron-phonon interaction only causes an incomplete initial Gaussian decay of the off-diagonal density matrix element in the singlet-triplet Hilbert space; a complete long-time exponential decay due to phonon relaxation would eventually dominate over two-spin decoherence. We analyze two-spin decoherence in both symmetric and biased double quantum dots, identifying their difference in electron-phonon coupling and the relevant consequences.