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arXiv:1108.0092 · Journal of Applied Physics

Laser-induced charging of microfabricated ion traps

Shannon X. Wang, Guang Hao Low, Nathan S. Lachenmyer, Yufei Ge, Peter F. Herskind, Isaac L. Chuang

Published Nov 15, 2011• 48 citations
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Abstract

Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions’ motional quantum states to deformation of the trapping potential. The charging induced by typical laser frequencies involved in Doppler cooling and quantum control is studied here, with microfabricated surface-electrode traps made of aluminum, copper, and gold, operated at 6 K with a single Sr+ ion trapped 100 μm above the trap surface. The lasers used are at 370, 405, 460, and 674 nm, and the typical photon flux at the trap is 1014 photons/cm2/sec. Charging is detected by monitoring the ion’s micromotion signal, which is related to the number of charges created on the trap. A wavelength and material dependence of the charging behavior is observed: Lasers at lower wavelengths cause more charging, and aluminum exhibits more charging than copper or gold. We describe the charging dynamic based on a rate-equation approach.

DOI
10.1063/1.3662118

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Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions’ motional quantum states to deformation of the trapping potential. The charging induced by typical laser frequencies involved in Doppler cooling and quantum control is studied here, with microfabricated surface-electrode traps made of aluminum, copper, and gold, operated at 6 K with a single Sr[superscript +] ion trapped 100 μm above the trap surface. The lasers used are at 370, 405, 460, and 674 nm, and the typical photon flux at the trap is 10[superscript 14] photons/cm[superscript 2]/sec. Charging is detected by monitoring the ion’s micromotion signal, which is related to the number of charges created on the trap. A wavelength and material dependence of the charging behavior is observed: Lasers at lower wavelengths cause more charging, and aluminum exhibits more charging than copper or gold. We describe the charging dynamic based on a rate-equation approach.

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The stray charges induced on ion trap surfaces can push trapped ions away from a pseudopotential null point. This can cause the micromotion of the trapped ions that in turn results in ion heating. One of the causes of stray charges is laser scattering on dielectric surfaces. The amount of laser-induced stray charges can be related to the area of the dielectric surface exposed to the ions. In this paper, stray charges are intentionally created at various dielectric surfaces on a microfabricated ion trap chip using a laser, and the resulting ion motion is measured. The ion movements are estimated by comparing ion positions before and after laser irradiation. When the laser irradiates a dielectric surface with an area of approximately 1,750 μm2exposed to the ion, the ion moves approximately −4.8 μm in the axial direction. When the laser irradiates another dielectric surface with an area of approximately 140 μm2exposed to the ion, the ion moves approximately −0.6 μm. The ratio between the ion movements corresponds to the ratio between the areas of each dielectric surface directly exposed to the ion normalized to the distance between the ion and the laser-induced stray charges. The results indicate the importance of reducing the area of dielectric surfaces that are directly in the line of laser paths.

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An ion trap is a device to confine charged particles by utilizing electromagnetic fields.Since the trapped ions have a feasibility of the individual state manipulation, a long coherence time, and an ideal isolation from the surroundings, the ion-trap technology becomes one of the leading candidates for the physical implementation of quantum information processing.In order to build a large-scale integrated iontrap system for realizing complex quantum algorithms, microfabrication technologies have been applied to construct ion traps.The use of micro-electromechanical system (MEMS) ion-trap chip allows a scalable architecture of ion-trap arrays and integration of functional components to the trap chip, but a few side effects also arise.One of the most particular problems is stray fields generated by the charges accumulated on the sidewalls of thick dielectric pillars or the native oxide grown on metal surfaces, since the stray fields lead to ion micromotions which can cause heating and escape of the trapped ions.This dissertation presents a silicon surface ion-trap chip with dielectric sidewalls shielded by metal films.The oxide pillars supporting the top electrodes are fabricated to have overhang structures, and the upper and lower part of the pillars are coated by separate aluminum layers which are electrically isolated from each other.In order to evaluate the effects of the native ii metal oxide on the electrode surface to the charging phenomenon, a trap chip with an additional gold layer on the aluminum electrodes is also fabricated.An ultra-high vacuum (UHV) chamber, electrical connections, and an optical setup are prepared to trap 174 Yb + ions, and the ions are successfully trapped by using the experimental setup including the fabricated ion-trap chip.To evaluate the effectiveness of the proposed electrode structures, charging is intentionally induced on the chip surface by injecting a 355-nm pulse laser with 40-μW power perpendicularly to the chip surface.The intensity of the stray field is estimated by measuring the displacement of ion position after charging is induced.When the Al-based chips with exposed and Al-coated dielectric sidewalls are used, the standard deviation of the intensities of stray fields are 3.53, and 5.63 V/m, respectively.However, the standard deviation of the intensity of stray fields in the case of using Au-coated chip is 1.56 V/m, and any stray field is measured when the laser was injected on the surface or sidewalls of the gold-coated electrodes.These experimental results indicate that the gold coating on the surface of the aluminum electrodes and the sidewalls of dielectric pillars is effective for eliminating the generation of stray fields induced by static charges.

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Accumulated electrostatic charges on the dielectric surfaces of ion traps are known to induce stray fields, leading to ion micromotions. In typical microfabricated ion-trap chips, metal electrodes are electrically isolated using thick dielectric pillars, which can accumulate stray charges on their sidewalls. This letter presents a new microfabrication method for ion-trap chips that reduces the exposure of dielectric surfaces to trapped ions. The dielectric pillars are fabricated with large T-shaped overhangs, and the sidewalls and top surfaces are coated with AlCu (1%) films. The bottom sides of the overhang parts provide electrical isolation. To prevent oxidation of the AlCu (1%) films, the electrode surfaces are coated with an additional Au film. The fabricated chips were implemented to trap174Yb+ions, and the laser-induced stray fields were measured. The results indicated that the trap chip fabricated by the newly developed method generates significantly smaller stray fields as compared with previous chips. [2017-0233]

Journal of Microelectromechanical Systems•Nov 21, 2017•17 citations
Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions’ motional quantum states to deformation of the trapping potential. The charging induced by typical laser frequencies involved in Doppler cooling and quantum control is studied here, with microfabricated surface-electrode traps made of aluminum, copper, and gold, operated at 6 K with a single Sr+ ion trapped 100 μm above the trap surface. The lasers used are at 370, 405, 460, and 674 nm, and the typical photon flux at the trap is 1014 photons/cm2/sec. Charging is detected by monitoring the ion’s micromotion signal, which is related to the number of charges created on the trap. A wavelength and material dependence of the charging behavior is observed: Lasers at lower wavelengths cause more charging, and aluminum exhibits more charging than copper or gold. We describe the charging dynamic based on a rate-equation approach.
Electrical charging of metal surfaces due to photoelectric generation of carriers is of concern in trapped ion quantum computation systems, due to the high sensitivity of the ions’ motional quantum states to deformation of the trapping potential. The charging induced by typical laser frequencies involved in Doppler cooling and quantum control is studied here, with microfabricated surface-electrode traps made of aluminum, copper, and gold, operated at 6 K with a single Sr[superscript +] ion trapped 100 μm above the trap surface. The lasers used are at 370, 405, 460, and 674 nm, and the typical photon flux at the trap is 10[superscript 14] photons/cm[superscript 2]/sec. Charging is detected by monitoring the ion’s micromotion signal, which is related to the number of charges created on the trap. A wavelength and material dependence of the charging behavior is observed: Lasers at lower wavelengths cause more charging, and aluminum exhibits more charging than copper or gold. We describe the charging dynamic based on a rate-equation approach.
The stray charges induced on ion trap surfaces can push trapped ions away from a pseudopotential null point. This can cause the micromotion of the trapped ions that in turn results in ion heating. One of the causes of stray charges is laser scattering on dielectric surfaces. The amount of laser-induced stray charges can be related to the area of the dielectric surface exposed to the ions. In this paper, stray charges are intentionally created at various dielectric surfaces on a microfabricated ion trap chip using a laser, and the resulting ion motion is measured. The ion movements are estimated by comparing ion positions before and after laser irradiation. When the laser irradiates a dielectric surface with an area of approximately 1,750 μm2exposed to the ion, the ion moves approximately −4.8 μm in the axial direction. When the laser irradiates another dielectric surface with an area of approximately 140 μm2exposed to the ion, the ion moves approximately −0.6 μm. The ratio between the ion movements corresponds to the ratio between the areas of each dielectric surface directly exposed to the ion normalized to the distance between the ion and the laser-induced stray charges. The results indicate the importance of reducing the area of dielectric surfaces that are directly in the line of laser paths.
Laser cleaning of the electrodes in a planar micro-fabricated ion trap has been attempted using ns pulses from a tripled Nd:YAG laser at 355 nm.The effect of the laser pulses at several energy density levels has been tested by measuring the heating rate of a single 40 Ca + trapped ion as a function of its secular frequency ω z .A reduction of the electric-field noise spectral density by ∼50% has been observed and a change in the frequency dependence also noticed.This is the first reported experiment where the 'anomalous heating' phenomenon has been reduced by removing the source as opposed to reducing its thermal driving by cryogenic cooling.This technique may open up the way to better control of the electrode surface quality in ion microtraps.The recent success of quantum information experiments based on trapped ions [1] triggered research on micro-fabricated radio-frequency (Paul) traps, which are in principle able to fulfill the scalability requirement of a quantum computer [2,3].In such traps, a set of micro-fabricated conducting electrodes generates oscillating and static electric fields that trap laser-cooled ions in a harmonic potential well at a sub-millimeter distance d from the substrate [4,5].However, the presence of uncontrolled fluctuating electric fields affects the ions' external motion and induces an 'anomalous heating' that limits the achievable fidelity of multi-ion quantum gates that rely on the coherent control of this motion [6].Experimental observations concerning this phenomenon 4
An ion trap is a device to confine charged particles by utilizing electromagnetic fields.Since the trapped ions have a feasibility of the individual state manipulation, a long coherence time, and an ideal isolation from the surroundings, the ion-trap technology becomes one of the leading candidates for the physical implementation of quantum information processing.In order to build a large-scale integrated iontrap system for realizing complex quantum algorithms, microfabrication technologies have been applied to construct ion traps.The use of micro-electromechanical system (MEMS) ion-trap chip allows a scalable architecture of ion-trap arrays and integration of functional components to the trap chip, but a few side effects also arise.One of the most particular problems is stray fields generated by the charges accumulated on the sidewalls of thick dielectric pillars or the native oxide grown on metal surfaces, since the stray fields lead to ion micromotions which can cause heating and escape of the trapped ions.This dissertation presents a silicon surface ion-trap chip with dielectric sidewalls shielded by metal films.The oxide pillars supporting the top electrodes are fabricated to have overhang structures, and the upper and lower part of the pillars are coated by separate aluminum layers which are electrically isolated from each other.In order to evaluate the effects of the native ii metal oxide on the electrode surface to the charging phenomenon, a trap chip with an additional gold layer on the aluminum electrodes is also fabricated.An ultra-high vacuum (UHV) chamber, electrical connections, and an optical setup are prepared to trap 174 Yb + ions, and the ions are successfully trapped by using the experimental setup including the fabricated ion-trap chip.To evaluate the effectiveness of the proposed electrode structures, charging is intentionally induced on the chip surface by injecting a 355-nm pulse laser with 40-μW power perpendicularly to the chip surface.The intensity of the stray field is estimated by measuring the displacement of ion position after charging is induced.When the Al-based chips with exposed and Al-coated dielectric sidewalls are used, the standard deviation of the intensities of stray fields are 3.53, and 5.63 V/m, respectively.However, the standard deviation of the intensity of stray fields in the case of using Au-coated chip is 1.56 V/m, and any stray field is measured when the laser was injected on the surface or sidewalls of the gold-coated electrodes.These experimental results indicate that the gold coating on the surface of the aluminum electrodes and the sidewalls of dielectric pillars is effective for eliminating the generation of stray fields induced by static charges.
Ion traps provide an excellent tool for controlling and observing the state of a single trapped ion. For this reason, ion traps have been proposed as a possible system for large-scale quantum computation. However, many obstacles must be overcome before quantum computing can become a reality. In particular, perturbations in the electric field due to noise and electrode charging must be reduced to increase coherence of the motional quantum state. Gold has been a popular choice in the past due to its inert properties; however, it is undesirable due its incompatibility with CMOS technology. This has led to increased research into alternative CMOS-compatible materials, such as aluminum and copper. This thesis presents measurements of electric field noise and light-induced charging in aluminum, copper, and gold surface electrode traps. In addition, the effect of oxide growth on field noise and electrode charging is explored by controlling the thickness of aluminum oxide on several aluminum traps. The measurements show that electric field noise can be suppressed in aluminum traps to approximately 10-18 V2 cm-2 Hz-1, matching the noise exhibited in gold traps, and that copper traps exhibit noise within an order of magnitude of that in aluminum and gold. However, the natural oxide of aluminum poses many problems towards high-performance aluminum ion traps. The electric field noise is shown to be strongly dependent on the oxide thickness, increasing the noise by a factor of about 10 until saturation at a thickness of 13 nm. Charging of surface electrodes is shown to be highly dependent upon the material, but the model presented does not match the experimental data and is found to be incomplete. These results indicate that ion traps made out of CMOS-compatible materials can perform as well as more traditional traps fabricated from gold with respect to heating and charging as long as methods are developed for controlling oxide growth.
Accumulated electrostatic charges on the dielectric surfaces of ion traps are known to induce stray fields, leading to ion micromotions. In typical microfabricated ion-trap chips, metal electrodes are electrically isolated using thick dielectric pillars, which can accumulate stray charges on their sidewalls. This letter presents a new microfabrication method for ion-trap chips that reduces the exposure of dielectric surfaces to trapped ions. The dielectric pillars are fabricated with large T-shaped overhangs, and the sidewalls and top surfaces are coated with AlCu (1%) films. The bottom sides of the overhang parts provide electrical isolation. To prevent oxidation of the AlCu (1%) films, the electrode surfaces are coated with an additional Au film. The fabricated chips were implemented to trap174Yb+ions, and the laser-induced stray fields were measured. The results indicated that the trap chip fabricated by the newly developed method generates significantly smaller stray fields as compared with previous chips. [2017-0233]