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arXiv:1107.0635

Fabrication of Nb/Al(AlOx)/Nb DC SQUID by focused ion beam sculpturing

Yuvaraj, D., Gil Bachar, Oren Suchoi, Oleg Shtempluck, Eyal Buks

Published Jul 4, 2011• 2 citations
arXivHTMLPDF

Abstract

Highly reproducible Nb/Al(AlOx)/Nb Josephson junction based direct current superconducting quantum interference devices (DC SQUID) were fabricated by three dimensional etching using focused ion beam. Hysteretic and non-hysteretic DC SQUID with critical current ranging from 25 to 1100 microampere were fabricated by varying the Al barrier and oxygen exposure time. The fabricated DC SQUIDs have shown periodic flux dependence with high modulation factor reaching a value of 92% at 4.2 K.

DOI
10.48550/arxiv.1107.0635

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Highly reproducible Nb/Al(AlOx)/Nb Josephson junction based direct current superconducting quantum interference devices (DC SQUID) were fabricated by three dimensional etching using focused ion beam. Hysteretic and non-hysteretic DC SQUID with critical current ranging from 25 to 1100 microampere were fabricated by varying the Al barrier and oxygen exposure time. The fabricated DC SQUIDs have shown periodic flux dependence with high modulation factor reaching a value of 92% at 4.2 K.
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Superconducting quantum interference device (SQUID) amplifier is best known for its low input impedance, low noise and low power consumption. Nowadays it is widely used for detecting the weak signals. Compared with other methods, the Nb/Al-AlOx/Nb structure Josephson junction based SQUID has the advantages of high transition temperature, high voltage flux modulation index and good heat recycle ability, wide critical voltage range, so it is a very good option for making SQUID amplifier. In this work, we fabricate the overdamped Josephson junction and washer dc SQUID, and test the I-V characteristics at He3 3 K stage temperature and calculate the current resolution of SQUID. The result of SQUID modulation property is good. The magnification becomes larger after increasing the input line number of loops, and the system noise becomes smaller after the join of the LC filter. This work is very important for designing and manufacturing transition edge sensor readout circuits.
Controlling the Interface Properties of Submicrometric Nb/A– AlOx\hbox{AlO}_{\rm x}AlOx​–Nb Josephson Junctions
Submicron Josephson devices are of a particular interest to the emerging field of quantum information, nanosized superconducting quantum interference devices (nano-SQUID) fabrication, AC voltage synthesis circuits for quantum metrology, etc. In this paper, we report on the development of our technology for producing non-hysteretic Nb/A-AlOx-Nb four-layered junctions with a diverse range of submicron dimensions, based on the focused ion beam (FIB) sculpting technique. We observed essential modifications of the main electrical characteristics as a result of the shrinking of the junction area, and relate them to the changes of the buried Nb/Al interface. We show that the electrical parameters-versus-temperature dependence can provide information on the quality of the junction interfaces. This aspect could be useful to better control of the entire fabrication process, allowing a further large-scale integration of Josephson nanodevices with improved transport characteristics.
Nb/Al-AlOx/Nb tunnel junctions with controllable critical current density JC are fabricated using the standard selective Nb etching process. Tunnel barriers are formed in different oxygen exposure conditions (oxygen pressure P and oxidation time t), giving rise to JC ranging from 100 A/cm2 to above 2000 A/cm2. JC shows a familiar linear dependence on P × t in logarithmic scales. We calculate the energy levels of the phase- and flux-type qubits using the achievable junction parameters and show that the fabricated Nb/Al-AlOx/Nb tunnel junctions can be used conveniently for quantum computation applications in the future.