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arXiv:1101.3311 · Physical Review B

Generic Hubbard model description of semiconductor quantum-dot spin qubits

Shuo Yang, Xin Wang, S. Das Sarma

Published Apr 7, 2011• 91 citations
arXivHTMLPDF

Abstract

We introduce a Hubbard model as the simple quantum generalization of the classical capacitance circuit model to study semiconductor quantum-dot spin qubits. We prove theoretically that our model is equivalent to the usual capacitance circuit model in the absence of quantum fluctuations. However, our model naturally includes quantum effects such as hopping and spin exchange. The parameters of the generalized Hubbard model can either be directly read off from the experimental plot of the stability diagram or be calculated from the microscopic theory, establishing a quantitative connection between the two. We show that, while the main topology of the charge stability diagram is determined by the ratio between intersite and on-site Coulomb repulsion, fine details of the stability diagram reveal information about quantum effects. Extracting quantum information from experiments using our Hubbard model approach is simple, but would require the measurement resolution to increase by an order of magnitude.

DOI
10.1103/physrevb.83.161301

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We introduce a Hubbard model as the simple quantum generalization of the classical capacitance circuit model to study semiconductor quantum-dot spin qubits. We prove theoretically that our model is equivalent to the usual capacitance circuit model in the absence of quantum fluctuations. However, our model naturally includes quantum effects such as hopping and spin exchange. The parameters of the generalized Hubbard model can either be directly read off from the experimental plot of the stability diagram or be calculated from the microscopic theory, establishing a quantitative connection between the two. We show that, while the main topology of the charge stability diagram is determined by the ratio between intersite and on-site Coulomb repulsion, fine details of the stability diagram reveal information about quantum effects. Extracting quantum information from experiments using our Hubbard model approach is simple, but would require the measurement resolution to increase by an order of magnitude.
We complete our recently introduced theoretical framework treating the double-quantum-dot system with a generalized form of Hubbard model. The effects of all quantum parameters involved in our model on the charge-stability diagram are discussed in detail. A general formulation of the microscopic theory is presented and, truncating at one orbital per site, we study the implication of different choices of the model confinement potential on the Hubbard parameters as well as the charge-stability diagram. We calculate the charge-stability diagram keeping three orbitals per site and find that the effect of additional higher-lying orbitals on the subspace with lowest-energy orbitals only can be regarded as a small renormalization of Hubbard parameters, thereby justifying our practice of keeping only the lowest orbital in all other calculations. The role of the harmonic-oscillator frequency in the implementation of the Gaussian model potential is discussed, and the effect of an external magnetic field is identified to be similar to choosing a more localized electron wave function in microscopic calculations. The full matrix form of the Hamiltonian, including all possible exchange terms and several peculiar charge-stability diagrams due to unphysical parameters, is presented in the Appendices, thus emphasizing the critical importance of a reliable microscopic model in obtaining the system parameters defining the Hamiltonian.
We predict large regions of the charge stability diagram using a multiband and multielectron configuration interaction model of a double quantum dot system. We account for many-body interactions within each quantum dot using full configuration interaction and solve for single-particle density operators. This allows charge states to be predicted more accurately than the extensively used classical capacitance model or the single-band Hubbard model. The resulting single-particle mixed states then serve as inputs into an atomic orbital picture that allows for the explicit calculation of the underlying Hubbard model parameters by performing the appropriate integrals. This numerical approach allows for arbitrary choices of electrostatic potential and gate geometry. A common assumption when calculating charge stability diagrams from the Hubbard model is that the charge stability diagrams are periodic, but we find that the tunnel couplings for valence electrons in dots with N=3N=3N=3 electrons are significantly enhanced when compared to single-electron dots. This difference is apparent in the charge stability diagram for higher occupancy Coulomb diamonds. We also quantitatively explore how the barrier gate strength and dot pitch impact this behavior. Our work should help improve the future realistic modeling of semiconductor-dot-based quantum circuits.
Semiconductor quantum dots are favorable candidates for quantum information processing due to their long coherence time and potential scalability. However, the calibration and characterization of interconnected quantum dot arrays have proven to be challenging tasks. One method to characterize the configuration of such an array involves using the Hubbard model. In this paper, we present an efficient characterization algorithm that efficiently extracts the Hubbard model parameters, including tunnel coupling and capacitive coupling energy, from experimental stability diagrams. Leveraging the dual-annealing optimizer, we determine the set of Hubbard parameters that best characterize the experimental data. We compare our method with an alternate, well-established measure of tunnel coupling and find good agreement within the investigated regime. Our extracted tunnel couplings range from 69 to 517 μeV, and we discuss the limiting factors of our method.
A quantitative description of the exchange interaction in quantum dots is relevant for modeling gate operations of spin qubits. By measuring the amplitude and frequency of exchange-driven qubit state oscillations, we measure the detuning dependence of the exchange coupling in a GaAs double quantum dot over three orders of magnitude. Both 1D and 3D full configuration interaction simulations can replicate the observed behavior. Extending a Hubbard model by including excited states increases the range of detuning where it provides a good fit, thus elucidating the underlying physics.
In this thesis, I present a microscopic theory of quantum circuits based on interacting electron spins in quantum dot molecules. We use the Linear Combination of Harmonic Orbitals-Configuration Interaction (LCHO-CI) formalism for microscopic calculations. We then derive effective Hubbard, t-J, and Heisenberg models. These models are used to predict the electronic, spin and transport properties of a triple quantum dot molecule (TQDM) as a function of topology, gate configuration, bias and magnetic field. With these theoretical tools and fully characterized TQDMs, we propose the following applications: 1. Voltage tunable qubit encoded in the chiral states of a half-filled TQDM. We show how to perform single qubit operations by pulsing voltages. We propose the "chirality-to-charge" conversion as the measurement scheme and demonstrate the robustness of the chirality-encoded qubit due to charge fluctuations. We derive an effective qubit-qubit Hamiltonian and demonstrate the two-qubit gate. This provides all the necessary operations for a quantum computer built with chirality-encoded qubits. 2. Berry's phase. We explore the prospect of geometric quantum computing with chirality-encoded qubit. We construct a Herzberg circuit in the voltage space and show the accumulation of Berry's phase. 3. Macroscopic quantum states on a semiconductor chip. We consider a linear chain of TQDMs, each with 4 electrons, obtained by nanostructuring a metallic gate in a field effect transistor. We theoretically show that the low energy spectrum of the chain maps onto that of a spin-1 chain. Hence, we show that macroscopic quantum states, protected by a Haldane gap from the continuum, emerge. In order to minimize decoherence of electron spin qubits, we consider using electron spins in the p orbitals of the valence band (valence holes) as qubits. We develop a theory of valence hole qubit within the 4-band k.p model. We show that static magnetic fields can be used to perform single qubit operations. We also show that the qubit-qubit interactions are sensitive to the geometry of a quantum dot network. For vertical qubit arrays, we predict that there exists an optimal qubit separation suitable for the voltage control of qubit-qubit interactions.
Semiconductor quantum dots are favorable candidates for quantum information processing due to their long coherence time and potential scalability. However, the calibration and characterization of interconnected quantum dot arrays have proven to be challenging tasks. One method to characterize the configuration of such an array involves using the Hubbard model. In this paper, we present an automated characterization algorithm that efficiently extracts the Hubbard model parameters, including tunnel coupling and capacitive coupling energy, from experimental stability diagrams. Leveraging the dual annealing optimizer, we determine the set of Hubbard parameters that best characterize the experimental data. We compare our method with an alternate, well-established measure of the tunnel coupling and find good agreement within the investigated regime. Our extracted tunnel couplings range from 69 to 517 μμμeV, and we discuss the limiting factors of our method.