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arXiv:1012.4405 · Physical Review Letters

Dissipative Effects on Quantum Sticking

Yanting Zhang, Dennis P. Clougherty

Published Apr 26, 2012• 14 citations
arXivHTMLPDF

Abstract

Using variational mean-field theory, many-body dissipative effects on the threshold law for quantum sticking and reflection of neutral and charged particles are examined. For the case of an Ohmic bosonic bath, we study the effects of the infrared divergence on the probability of sticking and obtain a nonperturbative expression for the sticking rate. We find that for weak dissipative coupling α, the low-energy threshold laws for quantum sticking are modified by an infrared singularity in the bath. The sticking probability for a neutral particle with incident energy E→0 behaves asymptotically as s~E((1+α)/2(1-α)); for a charged particle, we obtain s~E(α/2(1-α)). Thus, "quantum mirrors"-surfaces that become perfectly reflective to particles with incident energies asymptotically approaching zero-can also exist for charged particles. We provide a numerical example of the effects for electrons sticking to porous silicon via the emission of a Rayleigh phonon.

DOI
10.1103/physrevlett.108.173202

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Using variational mean-field theory, many-body dissipative effects on the threshold law for quantum sticking and reflection of neutral and charged particles are examined. For the case of an Ohmic bosonic bath, we study the effects of the infrared divergence on the probability of sticking and obtain a nonperturbative expression for the sticking rate. We find that for weak dissipative coupling α, the low-energy threshold laws for quantum sticking are modified by an infrared singularity in the bath. The sticking probability for a neutral particle with incident energy E→0 behaves asymptotically as sE((1+α)/2(1-α)); for a charged particle, we obtain sE(α/2(1-α)). Thus, "quantum mirrors"-surfaces that become perfectly reflective to particles with incident energies asymptotically approaching zero-can also exist for charged particles. We provide a numerical example of the effects for electrons sticking to porous silicon via the emission of a Rayleigh phonon.
We show that the orthogonality catastrophe can dramatically affect the probability with which an ultralow energy atom or ion will stick to a surface. We predict new energy-dependent scaling laws for the sticking probability in this low-energy regime. We provide numerical results of this theory for the case of ultracold electrons sticking to the surface of highly porous silicon and show that the sticking probability can differ substantially from that calculated with perturbation theory. We then generalize our results for finite surface temperatures and find surprisingly that the sticking probability can change sharply, vanishing below a critical incident energy that varies with the surface temperature. We describe in detail this superreflective surface phase for ultralow energy matter waves where the reflection coefficient is strictly equal to one.
A continuum model for low-energy physisorption on a membrane under tension is proposed and studied with variational mean-field theory. A discontinuous change in the energy-dependent sticking coefficient is predicted under certain conditions. This singularity is a result of the bosonic orthogonality catastrophe of the vibrational states of the membrane. The energy-dependent sticking coefficient is predicted to have exponential scaling in 1/E1/E1/E at energies above the singularity. The application of this model to the quantum sticking of cold hydrogen to suspended graphene is discussed. The model predicts that a beam of atomic hydrogen can be completely reflected by suspended graphene at ultralow energies.
The coherence-to-decoherence transition is studied in a nanowire modeled as a one-dimensional tight-binding lattice in the presence of an external field and in linear interaction with a boson heat bath, characterized by Ohmic dissipation. The focus of attention is the probability propagator which quantifies the likelihood of a quantum particle, such as an electron to end up at an arbitrary site at a time ttt, given that it was at the origin initially---and from it---the particle-current and the mean-squared displacement. If the bath is absent, the probability operator exhibits quantum coherence as can be captured by say, Bloch oscillation and Wannier-Stark (dynamic) localization. The coupling with the bath---which can be weak or strong---leads to decoherence that will be quantified in the text. The Ohmic model of the spectral function of bath excitations contains a cutoff frequency, which if greater than the temperature (in energy units) defines the ``low-temperature'' regime, whereas the opposite limit implies ``high temperatures.'' Results will be presented in both these regimes separately.
We study the infrared dynamics of low-energy atoms interacting with a sample of suspended graphene at finite temperature. The dynamics exhibits severe infrared divergences order by order in perturbation theory as a result of the singular nature of low-energy flexural phonon emission. Our model can be viewed as a two-channel generalization of the independent boson model with asymmetric atom-phonon coupling. This allows us to take advantage of the exact nonperturbative solution of the independent boson model in the stronger channel while treating the weaker one perturbatively. In the low-energy limit, the exact solution can be viewed as a resummation (exponentiation) of the most divergent diagrams in the perturbative expansion. As a result of this procedure, we obtain the atom's Green function which we use to calculate the atom damping rate, a quantity equal to the quantum sticking rate. A characteristic feature of our results is that the Green's function retains a weak, infrared cutoff dependence that reflects the reduced dimensionality of the problem. As a consequence, we predict a measurable dependence of the sticking rate on graphene sample size. We provide detailed predictions for the sticking rate of atomic hydrogen as a function of temperature and sample size. The resummation yields an enhanced sticking rate relative to the conventional Fermi golden rule result (equivalent to the one-loop atom self-energy), as higher-order processes increase damping at finite temperature.
We present a detailed study of the quantum dissipative dynamics of a charged particle in a magnetic field. Our focus of attention is the effect of dissipation on the low- and high-temperature behaviors of the specific heat at constant volume. After providing a brief overview of two distinct approaches to the statistical mechanics of dissipative quantum systems, viz., the ensemble approach of Gibbs and the quantum Brownian motion approach due to Einstein, we present exact analyses of the specific heat. While the low-temperature expressions for the specific heat, based on the two approaches, are in conformity with power-law temperature dependence, predicted by the third law of thermodynamics, and the high-temperature expressions are in agreement with the classical equipartition theorem, there are surprising differences between the dependencies of the specific heat on different parameters in the theory, when calculations are done from these two distinct methods. In particular, we find puzzling influences of boundary confinement and the bath-induced spectral cutoff frequency. Further, when it comes to the issue of approach to equilibrium, based on the Einstein method, the way the asymptotic limit (t-->infinity) is taken seems to assume significance.
The influence of dissipation on quantum tunneling in the spin-boson model with a sub-Ohmic bath is studied by a variational calculation. By examining the evolution of solutions of the variational equation with the coupling strength near the phase boundary, we are able to present a scenario of discontinuous transition in sub-Ohmic dissipation case in accord with Ginzburg-Landau theory. Based on the constructed picture, it is shown that the critical point found in the general way is not thermodynamically the critical point, but the point where the second energy minimum begins to develop. The true cross-over point is calculated and the obtained phase diagram is in agreement with the result of numerical renormalization group calculation.