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arXiv:1009.3981 · Applied Physics Express

Temperature Dependent Performances of Superconducting Nanowire Single-Photon Detectors in an Ultralow-Temperature Region

Taro Yamashita, Shigehito Miki, Wei Qiu, Mikio Fujiwara, Masahide Sasaki, Zhen Wang

Published Sep 17, 2010• 55 citations
arXivHTMLPDF

Abstract

We present the performances of a superconducting nanowire single-photon detector (SNSPD) in an ultralow-temperature region from 16 mK to 4 K. The system detection efficiency of the SNSPD showed saturation in the bias-current and temperature dependences, and reached the considerably high value of 15% for 100 Hz dark count rate below 1.4 K at a wavelength of 1550 nm even without an optical cavity structure. We found that the dark count exists even at 16 mK and black body radiation becomes its dominant origin in the low temperatures for fiber-coupled devices.

DOI
10.1143/apex.3.102502

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We present the performances of a superconducting nanowire single-photon detector (SNSPD) in an ultralow-temperature region from 16 mK to 4 K. The system detection efficiency of the SNSPD showed saturation in the bias-current and temperature dependences, and reached the considerably high value of 15% for 100 Hz dark count rate below 1.4 K at a wavelength of 1550 nm even without an optical cavity structure. We found that the dark count exists even at 16 mK and black body radiation becomes its dominant origin in the low temperatures for fiber-coupled devices.
We report on the performance of a fiber-coupled superconducting nanowire single-photon detector (SNSPD) from 4 K down to the ultralow temperature of 16 mK for a 1550 nm wave length. The system detection efficiency (DE) increased with de creasing the temperature and reached the considerably high value of 15% with a dark count rate less than 100 cps below 1.5 K, even without an optical cavity structure. We also observed saturation of the system DE in its bias current dependency at 16 mK, which indicates that the device DE of our SNSPD nearly reached intrinsic DE despite the device having a large active area of 20 μm × 20 μm. The dark count was finite even at 16 mK and the black body radiation becomes its dominant origin in the low temperatures for fiber-coupled devices.
We report the fabrication of a superconducting nanowire single-photon detector (SSPD or SNSPD) with an ultralow dark count rate. By introducing optical band-pass filters at the input of the SSPD and cooling the filters at 3 K, the dark count rate is reduced to less than 1/100 at low bias. An SSPD with 0.1 cps dark count rate and 5.6% system detection efficiency at 1550 nm wavelength is obtained. We show that a quantum key distribution (QKD) over 300 km of fiber is possible based on a numerical calculation assuming a differential phase shift QKD protocol implemented with our SSPDs.
The realization of an ultralow-dark-count rate (DCR) along with the conservation of high detection efficiency (DE) is critical for many applications using single photon detectors in quantum information technologies, material sciences, and biological sensing. For this purpose, a fiber-coupled superconducting nanowire single-photon detector (SNSPD) with a meander-type niobium nitride nanowire (width: 50 nm) is studied. Precise measurements of the bias current dependence of DE are carried out for a wide spectral range (from 500 to 1650 nm in steps of 50 nm) using a white light source and a laser line Bragg tunable band-pass filter. An ultralow DCR (0.0015 cps) and high DE (32%) are simultaneously achieved by the SNSPD at a wavelength of 500 nm.
Single photon detection advanced rapidly in the last decade. The superconducting nanowire single-photon detector (SNSPD) is an emerging technology, which offers low dark count rates, broadband sensitivity from visible to mid-infrared wavelengths and very high quantum efficiency. All these features are appealing for future emerging applications in remote gas sensing, quantum key distribution and quantum information processing. By enclosing the detector in an optical cavity, tuned to the operating wavelength, the total system detection of the SNSPD is improved. Based on the cavity design, the detector absorption is boosted at the desired experimental wavelength. Devices have been fabricated and tested, in this thesis, with enhanced detection efficiency at near-infrared, infrared and mid-infrared wavelengths. NbTiN detectors fabricated on Ta2O5 / SiO2 distributed Bragg reflectors (DBR) for front-side coupling exhibit a system detection efficiency of ≈ 90% at λ = 940 nm for the best device measured. SNSPDs were also fabricated in NbTiN on metallic mirrors for back-side coupling for 1550 and 2333 nm experimental wavelengths. The first design exhibited a system detection efficiency of ≈ 84.5%, at λ = 1550 nm for the best device measured. The second exhibited low system detection efficiency since the device suffered from unexpectedly high dark count rate mainly due to blackbody radiation at 2.2 K. However, it was possible to measure the timing jitter of this device at 350 mK indicating a FWHM of 84 ps. Another technique to improve the total system detection efficiency of the SNSPD, is by fabricating a hairpin-shaped nanowire atop a single mode waveguide. In this design, photons travel through the waveguide and via evanescent coupling are absorbed in the nanowire. These SNSPD devices have been designed to thread along single mode Si ridge waveguides using a hairpin-shaped nanowire structure, which offers enhanced coupling and absorption efficiency via evanescent coupling. These ultra-thin superconducting MoSi detectors are precisely patterned on top of a single mode Si waveguide (600 nm) with alignment error less than 40 nm. Low temperature electrical and nano-optical characterization was carried out using a two-stage pulse tube (PT) coldhead, using an additional 4He / 3He sorption pump, low vibration characterization of SNSPD devices at 350 mK was carried out. Characterised devices exhibit low dark count rate <5 counts per second and timing jitter of ≈ 83 ps full width half maximum (FWHM) at wavelength (λ) = 1550 nm and at critical current ≈ 30 µA.
Today Superconducting Nanowire Single-Photon Detectors (SNSPDs) are commonly used in different photon-starved applications, including testing and diagnostics of VLSI circuits. Detecting very faint signals in the near-infrared wavelength range requires not only good detection efficiency, but also very low Dark Count Rate (DCR) and jitter. For example, low noise is crucial to enable ultra-low voltage optical testing of integrated circuits. The effect of detector temperature and background thermal radiation on the noise of superconducting single-photon detectors made of NbN meanders is studied in this paper. It is shown that two different regimes can be identified in the DCR vs. bias current characteristics. At high bias, the dark count rate is dominated by the intrinsic noise of the detector, while at low bias current it is dominated by the detection of stray photons that get onto the SNSPD. Changing the detector temperature changes its switching current and only affects the high bias branch of the characteristics: a reduction of the DCR can be achieved by lowering the SNSPD base temperature. On the other hand, changing the temperature of the single-photon light source (e.g. the VLSI circuit under test) only affects the low bias regime: a lower target temperature leads to a smaller DCR.
Superconducting nanowire single photon detectors (SNSPD) have unique characteristics of ultra low dark counts and wide spectrum sensitivity. These natures are indispensable for the evaluation of ultra-broadband parametric fluorescence, which are used for the quantum optical coherence tomography and novel optical non-linear experiments. Here we report the spectral dependence of the detection efficiency of a meander type SNSPD device, having reduced strip width of 50 nm, over a wide spectrum range up to near infra-red wavelength. The fiber coupled, meander type device was fabricated using 6 nm thick Niobium nitride (NbN) nanowires of reduced strip width, 50 nm, patterned over a MgO substrate with active area of 10 x 10 μm2. A maximum efficiency of 32% at 500 nm, 30% at 600 nm, 16% at 800 nm, 10% at 1000 nm, and 1% at 1550 nm with the normalized bias current of 0.95 (bias 37 μA ) was observed at 4.2 K. The salient feature of the device is, it exhibits a very low dark count rate (DCR) of only 2 Hz at the standard operating bias of 37 μA and ultra low DCR of 0.01Hz at 34 μA. Moreover, at this reduced bias with 0.01Hz DCR, the detection efficiency is not appreciably decreased in the visible region (32% at 500 nm and 30% at 600 nm) and an order decrease is observed (0.1%) at 1550 nm. The noise equivalent power (NEP) is of the order 10-19 WHz-1/2 in the visible region and 10-17 WHz- 1/2 in the near IR region. Ultra-broad band parametric fluorescence of band width from 791 nm to 1610 nm generated by a quasi-phase matched (QPM) device was successfully detected with this SSPD.