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arXiv:1009.1746 · Applied Physics Letters

An in situ tunable radio-frequency quantum point contact

T. Müller, Bruno Küng, S. Hellmüller, P. Studerus, K. Ensslin, Thomas Ihn, M. Reinwald, W. Wegscheider

Published Nov 15, 2010• 27 citations
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Abstract

Incorporating a variable capacitance diode into a radio-frequency (rf) matching circuit allows us to in situ tune the resonance frequency of a rf quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to other rf-detection schemes, such as rf single electron transistor circuits.

DOI
10.1063/1.3517483

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Incorporating a variable capacitance diode into a radio-frequency (rf) matching circuit allows us to in situ tune the resonance frequency of a rf quantum point contact, increasing the versatility of the latter as a fast charge sensor of a proximal quantum circuit. The performance of this method is compared in detail to conventional low-frequency charge detection. The approach is also applicable to other rf-detection schemes, such as rf single electron transistor circuits.
A detailed analysis of the tunability of a radio-frequency quantum point contact setup using a C - LCR circuit is presented. We calculate how the series capacitance influences resonance frequency and charge-detector resistance for which matching is achieved as well as the voltage and power delivered to the load. Furthermore, we compute the noise contributions in the system and compare our findings with measurements taken with an etched quantum point contact. While our considerations mostly focus on our specific choice of matching circuit, the discussion of the influence of source-to-load power transfer on the signal-to-noise ratio is valid generally.
We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4K and millikelvin temperatures and found to have a bandwidth exceeding 20MHz. For single shot charge sensing, we achieve a charge sensitivity of ∼2×10−4e∕Hz referred to the neighboring dot’s charge. The rf-QPC compares favorably with rf single electron transistor electrometers and promises to be an extremely useful tool for characterizing and measuring semiconductor quantum systems on fast time scales.
We fabricate and characterize a radio-frequency semiconductor point-contact (rf-PC) electrometer analogous to radio-frequency single-electron transistors (rf-SETs) [see Schoelkopf et al., Science 280, 1238 (1998)]. The point contact is formed by surface Schottky gates in a two-dimensional electron gas in an AlGaAs∕GaAs heterostructure. In the present setup, the PC is operating as a simple voltage-controlled resistor rather than a quantum point contact and demonstrates a charge sensitivity of about 2×10−1e∕Hz at a bandwidth of 30kHz without the use of a cryogenic rf preamplifier. Since the impedance of a typical point-contact device is much lower than the impedance of the typical SET, a semiconductor-based rf-PC, equipped with practical cryogenic rf preamplifiers, could realize an ultrafast and ultrasensitive electrometer.
Single-shot measurement of the charge arrangement and spin state of a double quantum dot are reported with measurement times down to 100 ns. Sensing uses radio-frequency reflectometry of a proximal quantum dot in the Coulomb blockade regime. The sensor quantum dot is up to 30 times more sensitive than a comparable quantum point-contact sensor and yields three times greater signal to noise in rf single-shot measurements. Numerical modeling is qualitatively consistent with experiment and shows that the improved sensitivity of the sensor quantum dot results from reduced lifetime broadening and screening.
Radio-frequency reflectometry allows for fast and sensitive electrical readout of charge and spin qubits hosted in quantum dot devices coupled to resonant circuits. Optimizing readout, however, requires frequency tuning of the resonators and impedance matching. This is difficult to achieve using conventional semiconductor or ferroelectric-based varactors in the detection circuit as their performance degrades significantly in the mK temperature range relevant for solid-state quantum devices. Here we explore a different type of material, strontium titanate, a quantum paraelectric with exceptionally large field-tunable permittivity at low temperatures. Using strontium titanate varactors we demonstrate perfect impedance matching and resonator frequency tuning at 6 mK and characterize the varactors at this temperature in terms of their capacitance tunability, dissipative losses and magnetic field sensitivity. We show that this allows us to optimize the radio-frequency readout signal-to-noise ratio of carbon nanotube quantum dot devices to achieve a charge sensitivity of 4.8 μμμe/Hz1/2^{1/2}1/2 and capacitance sensitivity of 0.04 aF/Hz1/2^{1/2}1/2.