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arXiv:1008.3757 · Physical Review B

Dynamical properties of a nonequilibrium quantum dot close to a dissipative quantum phase transition

Chung‐Hou Chung

Published Mar 7, 2011• 1 citation
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Abstract

The dynamical decoherence rate and charge susceptibility of a nonequilibrium quantum dot close to a dissipative quantum phase transition are calculated. The setup concerns a resonance-level quantum dot coupled to two spinless fermionic baths with a finite bias voltage and an ohmic bosonic bath representing a dissipative environment. The system is equivalent to an anisotropic Kondo model. As dissipation strength increases, the system at zero temperature and zero bias exhibits a quantum phase transition of the Kosterlitz-Thouless (KT) type between a conducting delocalized phase and an insulating localized phase. Within the nonequilibrium frequency-dependent renormalization group (RG) approach, the finite bias crossover in dynamical decoherence rate and charge susceptibility close to the transition are addressed. The dynamical decoherence rate is found to increase with increasing frequency. In the delocalized phase, it shows a singularity at frequencies equal to positive or negative bias voltage. As the system cross overs to the localized phase, the decoherence rate at low frequencies gets progressively smaller and the singular feature is gradually smeared out, leading to a single linear frequency dependence. The dynamical charge susceptibility at low frequencies shows a dip-to-peak crossover across the transition. Relevance of these results to the experiments is discussed.

DOI
10.1103/physrevb.83.115308

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The dynamical decoherence rate and charge susceptibility of a nonequilibrium quantum dot close to a dissipative quantum phase transition are calculated. The setup concerns a resonance-level quantum dot coupled to two spinless fermionic baths with a finite bias voltage and an ohmic bosonic bath representing a dissipative environment. The system is equivalent to an anisotropic Kondo model. As dissipation strength increases, the system at zero temperature and zero bias exhibits a quantum phase transition of the Kosterlitz-Thouless (KT) type between a conducting delocalized phase and an insulating localized phase. Within the nonequilibrium frequency-dependent renormalization group (RG) approach, the finite bias crossover in dynamical decoherence rate and charge susceptibility close to the transition are addressed. The dynamical decoherence rate is found to increase with increasing frequency. In the delocalized phase, it shows a singularity at frequencies equal to positive or negative bias voltage. As the system cross overs to the localized phase, the decoherence rate at low frequencies gets progressively smaller and the singular feature is gradually smeared out, leading to a single linear frequency dependence. The dynamical charge susceptibility at low frequencies shows a dip-to-peak crossover across the transition. Relevance of these results to the experiments is discussed.
We calculate the finite-frequency current noise of a nonequilibrium resonance-level quantum dot close to a dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a de-localized phase for weak dissipation and a localized phase for strong dissipation. The resonance-level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic boson bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. To compute the finite-frequency noise, we combine two recently developed Functional Renormalization Group (FRG) approaches in Refs.[17,22] and in Ref.[23]. The nonequilibrium current noise at zero-temperature and finite frequencies shows a singular dip in the de-localized phase for the magnitude of frequencies equal to the bias voltage; while the dip is smeared out as the system moves to the localized phase. The corresponding peak-to-dip crossover is found in the AC conductance for the magnitude of frequencies equal to the bias voltage. The relevance and applications of our results for the experiments and for tunnelings between Fractional Quantum Hall Edge (FQHE) states and chiral Luttinger liquids are discussed.
Based on the recent paper [Phys. Rev. Lett. 102, 216803 (2009)], we study the nonequilibrium occupation number nd{n}_{d}nd​ and charge susceptibility $\ensuremath{\chi}$ of a resonance level close to dissipative quantum phase transition of the Kosterlitz-Thouless (KT) type between a delocalized phase for weak dissipation and a localized phase for strong dissipation. The resonance level is coupled to two spinless fermionic baths with a finite bias voltage and an Ohmic bosonic bath representing the dissipative environment. The system is equivalent to an effective anisotropic Kondo model out of equilibrium. Within the nonequilibrium renormalization-group approach, we calculate nonequilibrium magnetization MMM and spin susceptibility $\ensuremath{\chi}$ in the effective Kondo model, corresponding to $2{n}_{d}\ensuremath{-}1$ and $\ensuremath{\chi}$ of a resonance level, respectively. We demonstrate the smearing of the KT transition in the nonequilibrium magnetization MMM as a function of the effective anisotropic Kondo couplings, in contrast to a perfect jump in MMM at the transition in equilibrium. In the limit of large bias voltages, we find MMM and $\ensuremath{\chi}$ at the KT transition and in the localized phase show deviations from the equilibrium Curie-law behavior. As the system gets deeper in the localized phase, both ${n}_{d}\ensuremath{-}1/2$ and $\ensuremath{\chi}$ decrease more rapidly to zero with increasing bias voltages.
The resonant-level model represents a paradigmatic quantum system which serves as a basis for many other quantum impurity models. We provide a comprehensive analysis of the nonequilibrium transport near a quantum phase transition in a spinless dissipative resonant-level model, extending earlier work [Phys. Rev. Lett 102, 216803 (2009)]. A detailed derivation of a rigorous mapping of our system onto an effective Kondo model is presented. A controlled energy-dependent renormalization-group approach is applied to compute the nonequilibrium current in the presence of a finite bias voltage VVV. In the linear-response regime $V\ensuremath{\rightarrow}0$, the system exhibits as a function of the dissipative strength a localized-delocalized quantum transition of the Kosterlitz-Thouless (KT) type. We address fundamental issues of the nonequilibrium transport near the quantum phase transition: Does the bias voltage play the same role as temperature to smear out the transition? What is the scaling of the nonequilibrium conductance near the transition? At finite temperatures, we show that the conductance follows the equilibrium scaling for V<TV<TV<T, while it obeys a distinct nonequilibrium profile for V>TV>TV>T. We furthermore provide different signatures of the transition in the finite-frequency current noise and ac conductance via a recently developed functional renormalization group (FRG) approach. The generalization of our analysis to nonequilibrium transport through a resonant level coupled to two chiral Luttinger liquid leads, generated by fractional quantum Hall edge states, is discussed. Our work on the dissipative resonant level has direct relevance to experiments on a quantum dot coupled to a resistive environment, such as H. Mebrahtu et al., [Nature (London) 488, 61 (2012)].
Quantum phase transitions out of equilibrium are outstanding emergent subjects in condensed matter physics with great fundamental importance and challenges. We theoretically investigate here the nonequilibrium quantum phase transition in a generic nano-setup: the pseudogap Kondo model where a Kondo quantum dot couples to two---left (L) and right (R)---voltage-biased fermionic leads with power-law density of states (DOS) with respect to their Fermi levels ${\ensuremath{\mu}}_{L/R}$, ${\ensuremath{\rho}}_{c,L(R)}(\ensuremath{\omega})\ensuremath{\propto}{|\ensuremath{\omega}\ensuremath{-}{\ensuremath{\mu}}_{L(R)}|}^{r}$ with 0<r<10<r<10<r<1. In equilibrium (${\ensuremath{\mu}}_{L}\ensuremath{-}{\ensuremath{\mu}}_{R}=0$) and for 0<r<1/20<r<1/20<r<1/2, with increasing Kondo correlations this model exhibits a quantum phase transition from a unscreened local moment (LM) phase to the Kondo screened phase. At finite bias voltages and near criticality, we discover new nonequilibrium universal scaling behaviors in conductance, conduction electron TTT matrix, and local spin susceptibility via a controlled frequency-dependent renormalization group (RG) approach. The current-induced decoherence is key to understanding these distinct universal nonequilibrium quantum critical regimes. The relevance of our results to experiment is discussed.
We study a spinless level that hybridizes with a fermionic band and is also coupled via its charge to a dissipative bosonic bath. We consider the general case of a power-law hybridization function $\ensuremath{\Gamma}(\ensuremath{\omega})\ensuremath{\propto}{\ensuremath{\mid}\ensuremath{\omega}\ensuremath{\mid}}^{r}$, with $r\ensuremath{\geqslant}0$, and a bosonic-bath spectral function $B(\ensuremath{\omega})\ensuremath{\propto}{\ensuremath{\omega}}^{s}$, with $s\ensuremath{\geqslant}\ensuremath{-}1$. For r<1r<1r<1 and $\mathrm{max}(0,2r\ensuremath{-}1)<s<1$, this Bose-Fermi quantum impurity model features a continuous zero-temperature transition between a delocalized phase, with tunneling between the impurity level and the band, and a localized phase, in which dissipation suppresses tunneling in the low-energy limit. The phase diagram and the critical behavior of the model are elucidated using perturbative and numerical renormalization-group techniques, between which there is excellent agreement in the appropriate regimes. For r=0r=0r=0, this model's critical properties coincide with those of the spin-boson and Ising Bose-Fermi Kondo models, as expected from bosonization.
We apply the real-time renormalization group (RG) in nonequilibrium to an arbitrary quantum dot in the Coulomb blockade regime. Within one-loop RG equations, we include self-consistently the kernel governing the dynamics of the reduced density matrix of the dot. As a result, we find that relaxation and dephasing rates generically cut off the RG flow. In addition, we include all other cutoff scales defined by temperature, energy excitations, frequency, and voltage. We apply the formalism to transport through single molecular magnets, realized by the fully anisotropic Kondo model (with three different exchange couplings Jx{J}_{x}Jx​, Jy{J}_{y}Jy​, and Jz{J}_{z}Jz​) in a magnetic field hz{h}_{z}hz​. We calculate the differential conductance as function of bias voltage VVV and discuss a quantum phase transition which can be tuned by changing the sign of JxJyJz{J}_{x}{J}_{y}{J}_{z}Jx​Jy​Jz​ via the anisotropy parameters. Finally, we calculate the noise $S(\ensuremath{\Omega})$ at finite frequency $\ensuremath{\Omega}$ for the isotropic Kondo model and find that the dephasing rate determines the height of the shoulders in $dS(\ensuremath{\Omega})∕d\ensuremath{\Omega}$ near $\ensuremath{\Omega}=V$.