We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can offer both nuclear spin measurement and robustness against environmental defects. 31 P donor spins in isotopically purified 28 Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.
We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can offer both nuclear spin measurement and robustness against environmental defects. 31 P donor spins in isotopically purified 28 Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.
Abstract. We propose a novel optical and electrical hybrid scheme for the measurement of nuclear spin qubits in silicon. By combining the environmental insensitivity of the integer quantum Hall effect with the optically distinguishable hyperfine states of phosphorus impurities in silicon, our system can simultaneously offer nuclear spin measurement and robustness against environmental defects. 31P donor spins in isotopically purified 28Si are often discussed as very promising quantum memory qubits due to their extremely long decoherence times, and our proposed device offers an effective implementation for such a quantum memory system.
A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates remain outstanding challenges for these systems. Here, following recent proposals for long-distance coupling via dipole-dipole interactions, we present a simple method to implement fast, high-fidelity arbitrary single- and two-qubit gates in the absence of charge noise. Moreover, we provide a method to make the single-qubit gates robust to moderate levels of charge noise to well within an error bound of ${10}^{\ensuremath{-}3}$.
The nuclear spin state of a phosphorus donor (31P) in isotopically enriched silicon-28 is an excellent host to store quantum information in the solid state. The spin's insensitivity to electric fields yields a solid-state qubit with record coherence times but also renders coupling to other quantum systems very challenging. Here, we describe how to generate a strong electric dipole (>100 D) at microwave frequencies for the nuclear spin. This is achieved by applying a magnetic drive to the spin of the donor-bound electron while simultaneously controlling its charge state with electric fields. Under certain conditions, the microwave magnetic drive also renders the nuclear spin resonance frequency and electric dipole strongly insensitive to electrical noise, yielding long (>1 ms) dephasing times and robust gate operations. The nuclear spin could then be strongly coupled to microwave resonators, with a vacuum Rabi splitting of the order of 1 MHz, or to other nuclear spins, nearly half a micrometer apart, via strong electric dipole-dipole interaction. This work brings the 31P nuclear qubit into the realm of hybrid quantum systems and opens up new avenues in quantum information processing.
In recent years, solid-state spin systems have emerged as promising candidates for quantum information processing. Prominent examples are the nitrogen-vacancy (NV) center in diamond, phosphorus dopants in silicon (Si:P), rare-earth ions in solids, and V Si -centers in silicon-carbide. The Si:P system has demonstrated that its nuclear spins can yield exceedingly long spin coherence times by eliminating the electron spin of the dopant. For NV centers, however, a proper charge state for storage of nuclear spin qubit coherence has not been identified yet. Here, we identify and characterize the positively charged NV center as an electron-spin-less and optically inactive state by utilizing the nuclear spin qubit as a probe. We control the electronic charge and spin utilizing nanometer scale gate electrodes. We achieve a lengthening of the nuclear spin coherence times by a factor of 4. Surprisingly, the new charge state allows switching of the optical response of single nodes facilitating full individual addressability.
Donors in silicon, which combine an electron and nuclear spin, are some of the most promising candidates for quantum information. The electron spin has been proposed as a register with fast manipulation and the nuclear spin as a memory with long coherence times. However, this division reduces the complexity of the donor system, in particular behaviors emerging from their interaction. In natural silicon, there is also the presence of 29Si nuclear spins in the donor environment; though they are generally seen as a source of decoherence, they are quantum systems that can be investigated too. The main subject of this thesis is the study of the interactions between these various spins, using different methods to probe and control them. I first concentrate on the coupling between the donor and the 29Si spins. This coupling can be perturbed by the application of dynamical decoupling on the donor electron spin, whose evolution can be made sensitive to the number of 29Si spins interacting together. I then propose an error correction scheme using the donor and 29Si spins, showing key requirements such as coherence times and methods for manipulation and initialization. Secondly, I focus on the donor itself, in a regime where the hyperfine and Zeeman couplings compete with each other. Here, the spin transitions can have different sensitivities to the magnetic environment, and can even be suppressed to first order, resulting in coherence times up to seconds with electron spin-like manipulation times. Controlling this sensitivity was also used to probe the effect of the donor on the 29Si spin bath evolution. Finally, I use electric fields to modulate the hyperfine coupling within the donor. I first characterize the spins’ sensitivity to the electric field, and then demonstrate electrical switching of the nuclear spin response to an external magnetic excitation.
Abstract Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a ‘quantum memory’ while idle. The 31 P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the 31 P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically enriched 28 Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity F p ≈ 81 %, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses.