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arXiv:0909.2962 · New Journal of Physics

Low-temperature optical characterization of a near-infrared single-photon emitter in nanodiamonds

Petr Siyushev, V. Jacques, Igor Aharonovich, Florian Kaiser, Tina Müller, Laurent Lombez, Mete Atatüre, Stefania Castelletto, Steven Prawer, Fedor Jelezko, Jörg Wrachtrup

Published Nov 17, 2009• 56 citations
arXivHTMLPDF

Abstract

In this paper, we study the optical properties of single defects emitting in the near infrared (NIR) in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using a microwave chemical vapor deposition method followed by nickel implantation and annealing. We show that single defects exhibit several striking features at cryogenic temperature: the photoluminescence is strongly concentrated into a sharp zero-phonon line (ZPL) in the NIR, the radiative lifetime is in the nanosecond range and the emission is linearly polarized. The spectral stability of the defects is then investigated. An optical resonance linewidth of 4 GHz is measured using resonant excitation on the ZPL. Although Fourier-transform-limited emission is not achieved, our results show that it might be possible to use consecutive photons emitted in the NIR by single defects in diamond nanocrystals to perform two photon interference experiments, which are at the heart of linear quantum computing protocols.

DOI
10.1088/1367-2630/11/11/113029

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•Jan 1, 2009•0 citations
In this paper, we study the optical properties of single defects emitting in the near infrared (NIR) in nanodiamonds at liquid helium temperature. The nanodiamonds are synthesized using a microwave chemical vapor deposition method followed by nickel implantation and annealing. We show that single defects exhibit several striking features at cryogenic temperature: the photoluminescence is strongly concentrated into a sharp zero-phonon line (ZPL) in the NIR, the radiative lifetime is in the nanosecond range and the emission is linearly polarized. The spectral stability of the defects is then investigated. An optical resonance linewidth of 4 GHz is measured using resonant excitation on the ZPL. Although Fourier-transform-limited emission is not achieved, our results show that it might be possible to use consecutive photons emitted in the NIR by single defects in diamond nanocrystals to perform two photon interference experiments, which are at the heart of linear quantum computing protocols.
Single photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub GHz optical linewidths at 10K. The observed zero phonon line at ~ 780 nm is optically stable under low power resonant excitation and blue shifts as the excitation power increases. Our results highlight the prospect for using new near infrared color centers in nanodiamonds for quantum applications.
Single-photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub-GHz optical linewidth at 10 K. The observed zero-phonon line at ∼780 nm is optically stable under low power excitation and blue shifts as the excitation power increases. Our results highlight the prospect for using new near infrared color centers in nanodiamonds for quantum applications.
We report on the observation of optically active colour centres based on Nickel-Nitrogen impurities in natural diamond samples. These emitters can efficiently generate single photons in the near infrared. Their photoluminescence is perfectly stable at room temperature and has several striking features, such as a narrow band emission around 780 nm and a short photon emission lifetime around 2 ns. We present a detailed study of their photophysical properties measured under continuous-wave excitation.
Fluorescent emitters in diamond are considered to be a valuable resource for fields such as quantum communication, quantum photonics, and biological imaging. In this paper, we report a wide range of narrow bandwidth ( ~ 1.5 nm) spectral emission lines arising from different color centers at room temperature. The defects were created by chemical vapor deposition of thin diamond films grown on silica substrates seeded with nanoparticles of diamond and nickel. These fluorescent lines also possess single or few centers photon statistics. We correlate the zero-phonon lines, observed using confocal microscopy, with previously identified nickel-related centers which have been observed in high-pressure high-temperature diamond, with a Si/Ni complex and silicon vacancy defects. We compare our findings with recent results demonstrating single-photon emission in diamond associated with nickel-related centers to clarify and summarize previous studies concerning this specific dopant. The great variety of emission lines observed in the synthesized material, mainly associated with nickel-related centers, could be an important resource for applications relying on the presence of several emitters of single photons in the same sample. Moreover, the possibility of mass production of these centers in nanodiamonds in colloidal suspension may provide an important resource for biomarking and microscopy.
Abstract Silicon vacancy (SiV) centers in diamonds have attracted much attention because of their stability and narrow emission linewidth, and are promising for applications in quantum information technology. SiV-center-encapsulated nanodiamonds have also attracted much attention because of their potential to be coupled to various photonic devices. One efficient way to fabricate nanodiamonds that contain SiV centers is Si ion implantation into nanodiamonds. However, the evaluation of a single SiV center in a nanodiamond produced by this method at low temperatures has not been performed. In this study, we report on the optical properties of a single SiV center in a nanodiamond produced by ion implantation at cryogenic temperatures. The emission spectrum from a single SiV center ( g 2 ( 0 ) = 0.19 ) was observed with four distinct fine splittings of the zero-phonon line (ZPL) at 4 K. At an excitation power of 50 μ W, the full width at half maximum of the ZPL reached the spectrometer resolution limit (0.09 nm). The temperature dependence of the emission peak is consistent with that of the emission coming from an SiV center under high strain. The results obtained in this work suggest that nanodiamonds containing single SiV centers formed using this method will be an important building block for the realization of quantum information applications.
Quantum communication and quantum metrology established a demand for an accessible solid state systems which can generate a stream of single photons on demand [1]. Although single photon emission has been demonstrated from quantum dots (QD)[1,2], single molecules [3] and nanowires [4], their practical operation is limited by the temperature or photostability. Diamond crystals, however, are the most promising platform for generation of robust, photo-stable, single photons at room temperature [5,6]. Nevertheless, out of more than 500 existing optical centers in diamond only three known centers demonstrated a clear single photon emission: the nitrogen-vacancy complex [6,7], the silicon-vacancy complex [8] and the nickel-nitrogen complex [9,10]. Recent progress in materials science and fabrication techniques of diamond color centers unveiled novel quantum emitters with photo-physical properties surpassing the current mainstream [11,12,13]. Consequently, the versatility of the diamond lattice to host various impurities which give luminescence signals lead to a dramatic discovery of ultra bright single photon emitters operating in the MHz regime [14]. These new centers, comparable with QD in terms of brightness [1], but have the tremendous advantage of their room temperature operation and photo-stability. Furthermore, it opened a new avenue to investigate essentially an unknown group of single photon emitters. A brief description of the fabrication methods and a detailed quantum optical characterization of this class of diamond emitters is the subject of this presentation. In particular we will present the photo-physical properties of a novel family of single photon emitters, most likely originated from Cr impurities within the chemical vapor deposition grown nano-diamond crystals. We concentrate on the typical emission lines in the range of 740 - 790 nm, which exhibit single photon emission with count rate in the range of 0.8-3.2 106 counts/s at the limit of infinite optical excitation power, and life time as short as 1 ns. Even more, some of the emitters exhibit a photon statistics without any photon bunching, indicating a two-level system with unitary quantum efficiency. We will also show preliminary results of a resonant excitation at 4 K. We will highlight future directions to optimize these sources and avenues to investigate the fundamental properties of these centers.